Abstract: A method to produce a layered substrate, which includes the steps of depositing a diffusion barrier layer on the substrate; depositing an underlayer comprising a Group 6 metal on the barrier layer; and depositing a ruthenium layer comprising ruthenium on the underlayer, to produce the layered substrate. A layered substrate is also disclosed.

Abstract: A method to produce a layered substrate, which includes the steps of depositing a diffusion barrier layer on the substrate; depositing an underlayer comprising a Group 6 metal on the barrier layer; and depositing a ruthenium layer comprising ruthenium on the underlayer, to produce the layered substrate. A layered substrate is also disclosed.

Abstract: Methods and apparatuses for dispensing polishing fluids onto a polishing pad within a chemical mechanical polishing (CMP) system are disclosed herein. In particular, embodiments herein relate to a CMP apparatus for processing a substrate including a pad disposed on a platen. The pad has a pad radius and a central axis from which the pad radius extends. The apparatus also include a carrier assembly configured to be disposed on a surface of the pad and having a carrier radius that extends from a rotational axis of the carrier assembly and a fluid delivery assembly comprising one or more nozzles, each nozzle coupled to a fast actuating valve.

Abstract: Methods and apparatuses for dispensing polishing fluids onto a polishing pad within a chemical mechanical polishing (CMP) system are disclosed herein. In particular, embodiments herein relate to a CMP polishing method including urging a substrate against a surface of a pad of a polishing system using a carrier assembly. A fluid is dispensed onto the pad from a fluid delivery assembly at a variable flow rate and a first flow rate of the variable flow rate is pulsed at a frequency and a duty cycle. The frequency refers to a number of pulses of the fluid at the first flow rate per rotation of the pad. The term duty cycle refers to a percentage of the pad exposed to fluid per rotation of the pad. The carrier assembly is translated across a surface of the pad while rotating the carrier assembly about a rotational axis.

Abstract: Embodiments herein generally relate to chemical mechanical polishing (CMP) systems and methods for reducing non-uniform material removal rate at or near the peripheral edge of a substrate when compared to radially inward regions therefrom. In one embodiment, a polishing system includes a substrate carrier comprising an annular retaining ring which is used to surround a to-be-processed substrate during a polishing process and a polishing platen. The polishing platen includes cylindrical metal body having a pad-mounting surface. The pad-mounting surface comprises a plurality of polishing zones which include a first zone having a circular or annular shape, a second zone circumscribing the first zone, and a third zone circumscribing the second zone. A surface of the second zone is recessed from surfaces of the first and third zones adjacent thereto, and a width of the second zone is less than an outer diameter of the annular retaining ring.

Abstract: Exemplary slurry delivery systems may include a slurry source. The systems may include a slurry line coupled with the slurry source. The systems may include a slurry dispensing nozzle. The nozzle may include a lumen having an inlet that is fluidly coupled with a slurry outlet of the slurry line. The nozzle may include a body defining a reservoir and an exit port. The reservoir may be fluidly coupled with a downstream end of the lumen. The exit port may be coupled with the reservoir. The nozzle may include a valve seat. The nozzle may include a valve member having a first surface positioned against the valve seat when in a closed position. The valve member may be movable to an open position in which the first surface is spaced apart from the valve seat. The nozzle may include an actuator coupled with a second surface of the valve member.

Abstract: Methods and apparatuses for dispensing polishing fluids onto a polishing pad within a chemical mechanical polishing (CMP) system are disclosed herein. In particular, embodiments herein relate to a CMP polishing method including urging a substrate against a surface of a pad of a polishing system using a carrier assembly. A fluid is dispensed onto the pad from a fluid delivery assembly at a variable flow rate and a first flow rate of the variable flow rate is pulsed at a frequency and a duty cycle. The frequency refers to a number of pulses of the fluid at the first flow rate per rotation of the pad. The term duty cycle refers to a percentage of the pad exposed to fluid per rotation of the pad. The carrier assembly is translated across a surface of the pad while rotating the carrier assembly about a rotational axis.

Abstract: Embodiments herein generally relate to chemical mechanical polishing (CMP) systems and methods for reducing non-uniform material removal rate at or near the peripheral edge of a substrate when compared to radially inward regions therefrom. In one embodiment, a polishing system includes a substrate carrier comprising an annular retaining ring which is used to surround a to-be-processed substrate during a polishing process and a polishing platen. The polishing platen includes cylindrical metal body having a pad-mounting surface. The pad-mounting surface comprises a plurality of polishing zones which include a first zone having a circular or annular shape, a second zone circumscribing the first zone, and a third zone circumscribing the second zone. A surface of the second zone is recessed from surfaces of the first and third zones adjacent thereto, and a width of the second zone is less than an outer diameter of the annular retaining ring.