Patents by Inventor Anand S. Murtthy

Anand S. Murtthy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having doped epitaxial region and its methods of fabrication
    Patent number: 8598003
    Abstract: Embodiments of the present invention describe a epitaxial region on a semiconductor device. In one embodiment, the epitaxial region is deposited onto a substrate via cyclical deposition-etch process. Cavities created underneath the spacer during the cyclical deposition-etch process are backfilled by an epitaxial cap layer. The epitaxial region and epitaxial cap layer improves electron mobility at the channel region, reduces short channel effects and decreases parasitic resistance.
    Type: Grant
    Filed: December 21, 2009
    Date of Patent: December 3, 2013
    Assignee: Intel Corporation
    Inventors: Anand S. Murtthy, Daniel Bourne Aubertine, Tahir Ghani, Abhijit Jayant Pethe