Abstract: An article for damping vibrations by constrained layer damping comprising: a first constraining layer; a second constraining layer; and a damping layer disposed between the first and second constraining layers, wherein the first and second constraining layers each independently comprise a fibre-reinforced composite material, wherein the first and second constraining layers each independently have a thickness from 1.5 to 5 mm, wherein the damping layer comprises a viscoelastic material, wherein the damping layer has a thickness from 1 to 10 mm and wherein the article has a thickness from 6 to 50 mm. The invention also relates to the use of said article for damping vibrations in a vehicle.

Abstract: An article for damping vibrations by constrained layer damping comprising: a first constraining layer; a second constraining layer; and a damping layer disposed between the first and second constraining layers, wherein the first and second constraining layers each independently comprise a fibre-reinforced composite material, wherein the first and second constraining layers each independently have a thickness from 1.5 to 5 mm, wherein the damping layer comprises a viscoelastic material, wherein the damping layer has a thickness from 1 to 10 mm and wherein the article has a thickness from 6 to 50 mm. The invention also relates to the use of said article for damping vibrations in a vehicle.

Abstract: A material susceptible to dielectric heating has a base polymeric thermoplastic material (1) and a dielectric heating susceptor (2, 3) which increases susceptibility to heating by irradiation with electromagnetic, for example RF or microwave, radiation. The dielectric heating susceptor has a polymeric material (2) such as PVDF which is different from the base polymeric material and has a higher dielectric loss factor than the base polymeric material. The dielectric heating susceptor also comprises electrically polarisable entities such as carbon black dispersed within the base polymeric material without forming a conductive network. The two susceptor materials in combination with the base polymer are particularly effective together at improving susceptibility to electromagnetic radiation heating of the whole material.

Abstract: A material susceptible to dielectric heating has a base polymeric thermoplastic material (1) and a dielectric heating susceptor (2, 3) which increases susceptibility to heating by irradiation with electromagnetic, for example RF or microwave, radiation. The dielectric heating susceptor has a polymeric material (2) such as PVDF which is different from the base polymeric material and has a higher dielectric loss factor than the base polymeric material. The dielectric heating susceptor also comprises electrically polarisable entities such as carbon black dispersed within the base polymeric material without forming a conductive network. The two susceptor materials in combination with the base polymer are particularly effective together at improving susceptibility to electromagnetic radiation heating of the whole material.

Abstract: Described are apparatuses and methods for improving resistive memory energy efficiency and reliability. An apparatus may include a resistive memory cell coupled to a conductive line. The apparatus may further include a driver coupled to the conductive line to drive current for the resistive memory cell during a write operation. The resistance of the driver may be selectively increased for two or more time periods during the write operation for detecting a voltage change on the conductive line. The current for the write operation may be turned off when the voltage change is detected to improve resistive memory energy efficiency and reliability.

Abstract: Described are apparatuses and methods for improving resistive memory energy efficiency and reliability. An apparatus may include a resistive memory cell coupled to a conductive line. The apparatus may further include a driver coupled to the conductive line to drive current for the resistive memory cell during a write operation. The resistance of the driver may be selectively increased for two or more time periods during the write operation for detecting a voltage change on the conductive line. The current for the write operation may be turned off when the voltage change is detected to improve resistive memory energy efficiency and reliability.