Abstract: Embodiments described herein generally relate to methods and apparatuses for manufacturing devices. An improved substrate support assembly having a fluoro polymer layer disposed at one or more interfaces between a substrate and a susceptor and method for processing a substrate utilizing the same are provided. The fluoro polymer layer disposed at one or more interfaces between the substrate and the susceptor allows the substrate to adhere firmly to the susceptor, and allows the substrate and the susceptor to withstand greater shear forces, thus minimizing movement between the substrate and the susceptor.

Abstract: Sensors employing control systems determining locations of movable droplets within passageways, and related methods are disclosed. A sensor includes a movable droplet within a passageway supported on a substrate. The droplet may move to and from a quiescent point in the passageway which is at least partially formed by a hydrophobic layer. By including a hydrophobic layer having a hydrophobicity characteristic which decreases according to distance from the quiescent point, the droplet may move to a displacement position outside of the quiescent point in response to an external force. A control system of the sensor determines an acceleration and/or angular position of the sensor based on the displacement position. In this manner, a low cost sensor may be fabricated with without expensive nanostructures.

Abstract: The electrical properties of graphene and molybdenum sulfide semiconductor devices are improved by incorporating a fluoropolymer capping layer that is in contact with the graphene or molybdenum sulfide layer.

Abstract: A four terminal field effect device comprises a silicon field effect device with a silicon N-type semiconductor channel and an N+ source and drain region. An insulator is deposited over the N-type semiconductor channel. An organic semiconductor material is deposited over the insulator gate forming a organic semiconductor channel and is exposed to the ambient environment. Drain and source electrodes are deposited and electrically couple to respective ends of the organic semiconductor channel. The two independent source electrodes and the two independent drain electrodes form the four terminals of the new field effect device. The organic semiconductor channel may be charged and discharged electrically and have its charge modified in response to chemicals in the ambient environment. The conductivity of silicon semiconductor channel is modulated by induced charges in the common gate in response to charges in the organic semiconductor channel.

Abstract: A four terminal field effect device comprises a silicon field effect device with a silicon N-type semiconductor channel and an N+ source and drain region. An insulator is deposited over the N-type semiconductor channel. An organic semiconductor material is deposited over the insulator gate forming a organic semiconductor channel and is exposed to the ambient environment. Drain and source electrodes are deposited and electrically couple to respective ends of the organic semiconductor channel. The two independent source electrodes and the two independent drain electrodes form the four terminals of the new field effect device. The organic semiconductor channel may be charged and discharged electrically and have its charge modified in response to chemicals in the ambient environment. The conductivity of silicon semiconductor channel is modulated by induced charges in the common gate in response to charges in the organic semiconductor channel.

Abstract: A four terminal field effect device comprises a silicon field effect device with a silicon N-type semiconductor channel and an N+ source and drain region. An insulator is deposited over the N-type semiconductor channel. An organic semiconductor material is deposited over the insulator gate forming a organic semiconductor channel and is exposed to the ambient environment. Drain and source electrodes are deposited and electrically couple to respective ends of the organic semiconductor channel. The two independent source electrodes and the two independent drain electrodes form the four terminals of the new field effect device. The organic semiconductor channel may be charged and discharged electrically and have its charge modified in response to chemicals in the ambient environment. The conductivity of silicon semiconductor channel is modulated by induced charges in the common gate in response to charges in the organic semiconductor channel.

Abstract: A four terminal field effect device comprises a silicon field effect device with a silicon N-type semiconductor channel and an N+ source and drain region. An insulator is deposited over the N-type semiconductor channel. An organic semiconductor material is deposited over the insulator gate forming a organic semiconductor channel and is exposed to the ambient environment. Drain and source electrodes are deposited and electrically couple to respective ends of the organic semiconductor channel. The two independent source electrodes and the two independent drain electrodes form the four terminals of the new field effect device. The organic semiconductor channel may be charged and discharged electrically and have its charge modified in response to chemicals in the ambient environment. The conductivity of silicon semiconductor channel is modulated by induced charges in the common gate in response to charges in the organic semiconductor channel.

Abstract: A two-dimensional photonic crystal coupler is disclosed, together with a cross-coupled laser structure that is based on a two-dimensional photonic crystal coupler stage. Unlike traditional grating couplers, this two-dimensional photonic crystal coupler can couple light into a single or a plurality of discrete directions in the far-field, i.e., the output light may be unidirectional or discrete. The coupler can be integrated with one-dimensional lasers, a distributed feedback laser, a distributed Bragg reflector laser, and integrated on the same waveguide as the lasers. A resonant cavity coupler design improves the coupling efficiency of two-dimensional photonic crystal-based couplers.

Abstract: An apparatus having a circuit coupled to the gate contact of field effect transistor wherein the transistor's gate includes a dielectric layer of which at least a portion is an organic dielectric. The circuit is configured to produce one or more storage voltage pulses that cause charge to be stored in the dielectric layer. The field effect transistor has a semiconductor layer with a conductive path whose conductivity changes for a given Vg in response to storing the charge. The circuit may produce one or more dissipation voltage pulses having a voltage of opposite sign to the one or more storage pulses, that cause dissipation of charge stored in the dielectric layer. Further disclosed are a memory and a method of electronically storing and reading information, both utilizing the organic-based polarizable gate transistor apparatus.

Abstract: Circuits include at least one-odor sensitive organic transistor having a conduction channel whose conductivity changes in response to certain odors. The organic transistors are interconnected to increase their response to selected odor signals. The organic transistors may be interconnected to form a ring oscillator whose frequency of oscillation changes in response to an odor signal and in which the alternating signal applied to the gate electrodes of the organic transistors enhances their recovery and reduces their drift.

Abstract: An electronic odor sensor includes first and second amplifiers, a biasing network, and a device connected to receive the output signals from the first and second amplifiers. The device is configured to correlate the received output signals to the presence or absence of an odor. The first and second amplifiers have respective first and second organic semiconductor layers and are configured to produce output signals responsive to the conductivities of their respective organic semiconductor layers. The conductivities of the organic semiconductor layers are responsive to voltages applied to associated ones of the amplifiers and to the presence of the odor. The biasing network applies the voltages to the amplifiers.

Abstract: An apparatus having a circuit coupled to the gate contact of a field effect transistor wherein the transistor's gate includes a dielectric layer of which at least a portion is an organic dielectric. The circuit is configured to produce one or more storage voltage pulses that cause charge to be stored in the gate. The field effect transistor has a semiconductor layer with a conductive path whose conductivity changes for a given Vg in response to storing the charge. The circuit may produce one or more dissipation voltage pulses having a voltage of opposite sign to the one or more storage pulses, that cause dissipation of charge stored in the gate. Further disclosed are a memory and a method of electronically storing and reading information, both utilizing the organic-based polarizable gate transistor apparatus.

Abstract: A circuit includes at least one odor-sensitive organic field effect transistor (OFET) having a conduction channel whose conductivity changes in response to certain ambient odors and a feedback loop coupled between an output and an input of the circuit. The feedback loop generates a feedback signal which stabilizes the output signal of the circuit for time drift of the odor-sensitive organic transistor. In one embodiment, the OFET is an integral part of an amplifier and generates input signals to the amplifier in response to certain odors. A selectively enabled switch may be coupled between the output and the input of the amplifier circuit to provide negative feedback that tends to cancel the effect on the amplifier of time drift due to the OFET.

Abstract: Circuits include at least one-odor sensitive organic transistor having a conduction channel whose conductivity changes in response to certain odors. The organic transistors are interconnected to increase their response to selected odor signals. The organic transistors may be interconnected to form a ring oscillator whose frequency of oscillation changes in response to an odor signal and in which the alternating signal applied to the gate electrodes of the organic transistors enhances their recovery and reduces their drift.

Abstract: An electronic odor sensor includes first and second amplifiers, a biasing network, and a device connected to receive the output signals from the first and second amplifiers. The device is configured to correlate the received output signals to the presence or absence of an odor. The first and second amplifiers have respective first and second organic semiconductor layers and are configured to produce output signals responsive to the conductivities of their respective organic semiconductor layers. The conductivities of the organic semiconductor layers are responsive to voltages applied to associated ones of the amplifiers and to the presence of the odor. The biasing network applies the voltages to the amplifiers.

Abstract: A circuit includes at least one odor-sensitive organic field effect transistor (OFET) having a conduction channel whose conductivity changes in response to certain ambient odors and a feedback loop coupled between an output and an input of the circuit. The feedback loop generates a feedback signal which stabilizes the output signal of the circuit for time drift of the odor-sensitive organic transistor. In one embodiment, the OFET is an integral part of an amplifier and generates input signals to the amplifier in response to certain odors. A selectively enabled switch may be coupled between the output and the input of the amplifier circuit to provide negative feedback that tends to cancel the effect on the amplifier of time drift due to the OFET.

Abstract: An article is disclosed having a non-planar surface with a high-resolution pattern formed thereon, particularly a distributed-feedback (DFB) ridge waveguide laser. An elastomeric member having relief patterns on its surface is used to print or mold a pattern directly onto the non-planar surface of the waveguide. A range of materials disposed on such non-planar surfaces can thus be patterned at high resolution to provide devices with sub-micron features at low cost with potential applications in optoelectronics. For example, a plastic laser based on molded organic gain materials may be made.

Abstract: A display apparatus according to our invention comprises a multiplicity of nominally identical smart pixels, a given pixel comprising an organic light emitting diode and an organic or inorganic (e.g., amorphous or polycrystalline Si) pixel FET. The display also comprises drive/compensation circuitry adapted for mitigating or eliminating non-idealities associated with the organic components. Among the non-idealities are variations in mobility and/or threshold voltage of the pixel FET from transistor to transistor, change in mobility and/or threshold voltage with time in a given pixel FET, change over time of the LED characteristics, capacitive signal feed-through through the gate insulator of the pixel FETs by short rise/fall time pulses, poor on-off ratio of the pixel FET, and charge leakage through the gate dielectric. Exemplary drive/compensation circuitry is disclosed.

Abstract: A laser structure may be used to fabricate a plastic laser and achieve electrically-driven lasing action. The structure comprises an LED, a waveguide laser, and a substrate disposed between them. The substrate has a first and a second side. Light emitted from the LED is received by the substrate at the first side and concentrated as it is guided with the body of the substrate to the second side, where it is received by the laser. Concentration of the light across the substrate improves the efficiency of the device and leads to lower threshold powers.

Abstract: Disclosed are organic thin film transistors that can be either n-channel or p-channel transistors, depending on biasing conditions. Such transistors are expected to find wide use in complementary circuits. A specific embodiment of the inventive transistor comprises a 15 nm thick layer of &agr;-6T with a 40 nm thick layer of C60 thereon. The latter was protected against degradation by the ambient by means of an appropriate electrically inert layer, specifically by a 40 nm &agr;-6T layer.