Abstract: A toughening agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent selected from the group consisting of an amine, an onium compound and an alkali metal hydroxide.

Abstract: Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents.

Abstract: The present invention provides polishing pads for use in CMP processes. In one embodiment, a pad comprises a surface defining a plurality of grooves with landing surfaces separating the grooves, the landing surfaces together defining a substantially coplanar polishing surface, each groove having a depth of at least about 10 mil and a width, WG, with any two adjacent grooves being separated from each other a landing surface having a width, WL, wherein the quotient WL/WG is less than or equal to 3. In a preferred embodiment, the surface of the pad defines a series of concentric substantially circular grooves. In an alternative embodiment, the surface of the pad defines a spiral groove having a depth of at least about 10 mil and a width WG, and a spiral landing surface outlining spiral groove the having a width, WL, wherein the spiral landing surface defines a substantially coplanar polishing surface and the quotient WL/WG is less than or equal to 3.

Abstract: A method for restoring hydrophobicity to the surfaces of organosilicate glass dielectric films which have been subjected to an etchant or ashing treatment. These films are used as insulating materials in the manufacture of integrated circuits to ensure low and stable dielectric properties in these films. The method deters the formation of stress-induced voids in these films. An organosilicate glass dielectric film is patterned to form vias and trenches by subjecting it to an etchant or ashing reagent in such a way as to remove at least a portion of previously existing carbon containing moieties and reduce hydrophobicity of said organosilicate glass dielectric film. The vias and trenches are thereafter filled with a metal and subjected to an annealing treatment.

Abstract: A method for forming a substantially transparent nanoporous organosilicate film on a substantially transparent substrate, for use in optical lighting devices such as organic light emitting diodes (OLEDs). The method includes first preparing a composition comprising a silicon containing pre-polymer, a porogen, and a catalyst. The composition is coated onto a substrate which is substantially transparent to visible light, forming a film thereon. The film is then gelled by crosslinking and cured by heating, such that the resulting cured film is substantially transparent to visible light. It is preferred that both the substrate and the nanoporous film are at least 98% transparent to visible light. Optical devices which include the resulting structures of this invention exhibit improved light extraction and illuminance where the nanoporous organosilicate film has a low refractive index in the range of 1.05 to 1.4, serving as an impedance matching layer in such devices.

Abstract: The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits capable of withstanding wet etch treatments. A silica dielectric film is formed on a substrate. The silica dielectric film has a density of from about 1.0 to about 2.3 g/ml, a SiC:SiO bond ratio of about 0.015 or more, a dielectric constant of about 4.0 or less, a breakdown voltage of about 2 MV/cm or more, and a wet etch resistance in a 100:1 by volume mixture of water and hydrogen fluoride of about 30 ?/minute or less.

Abstract: The present invention provides a composition comprising: (a) dielectric material; and (b) porogen comprising at least two fused aromatic rings wherein each of the fused aromatic rings has at least one alkyl substituent thereon and a bond exists between at least two of the alkyl substituents on adjacent aromatic rings. Preferably, the dielectric material is a composition comprising (a) thermosetting component comprising (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II as set forth below where Q, G, h, I, I, and w are as set forth below and (b) porogen.

Abstract: Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents.

Abstract: The present invention provides a composition comprising: (a) dielectric material; and (b) porogen comprising at least two fused aromatic rings wherein each of the fused aromatic rings has at least one alkyl substituent thereon and a bond exists between at least two of the alkyl substituents on adjacent aromatic rings. Preferably, the dielectric material is a composition comprising (a) thermosetting component comprising (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II as set forth below where Q, G, h, I, I, and w are as set forth below and (b) porogen.

Abstract: The present invention provides a composition comprising: (a) thermosetting component comprising (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II set forth below where E is a cage compound (defined below); each Q is the same or different and selected from aryl, branched aryl, and substituted aryl wherein the substituents include hydrogen, halogen, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxyl, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxyl, or carboxyl; G is aryl or substituted aryl where substituents include halogen and alkyl; h is from 0 to 10; i is from 0 to 10; j is from 0 to 10; and w is 0 or 1; (b) adhesion promoter comprising compound having at least bifunctionality wherein the bifunctionality may be the same or different and the first functionality is capable of interacting with the thermosetting component (a) and the second functionality is capable of interacting with a substrate whe

Abstract: A toughening agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent selected from the group consisting of an amine, an onium compound and an alkali metal hydroxide.

Abstract: The present invention provides a composition comprising: (a) thermosetling component comprising (1) optionally at least one monomer of Formula I as sel forth below and (2) at least one oligomer or polymer of Formula II set forth below where E is a cage compound (defined below); each Q is the same or different and selected from hydrogen, aryl, branched aryl, and substituted aryl wherein the substituents include hydrogen, halogen, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxyl, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxyl, or carboxyl; Gw is aryl or substituted aryl where substituents include halogen and alkyl; h is from 0 to 10; i is from 0 to 10; j is from 0 to 10; and w is 0 or 1; adhesion promoter comprising compound having least bifunctionality wherein the bifunctionality may be the same or different and the first functionality is capable of interacting with the thermosetting component (a) and the second functionality is capable of interacting with

Abstract: The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits capable of withstanding wet etch treatments. A silica dielectric film is formed on a substrate. The silica dielectric film has a density of from about 1.0 to about 2.3 g/ml, a SiC:SiO bond ratio of about 0.015 or more, a dielectric constant of about 4.0 or less, a breakdown voltage of about 2 MV/cm or more, and a wet etch resistance in a 100:1 by volume mixture of water and hydrogen fluoride of about 30 ?/minute or less.

Abstract: The invention relates to semiconductor device fabrication and more specifically to a method and material for forming of shallow trench isolation structures in integrated circuits. A silica dielectric film is formed by preparing a composition comprising a silicon containing pre-polymer, optionally water, and optionally a metal-ion-free catalyst selected from the group consisting of onium compounds and nucleophiles. The substrate is then coated with the composition to form a film. The film is then crosslinked to produce a gelled film. The gelled film is then heated at a temperature of from about 750° C. to about 1000° C. for a duration effective to remove substantially all organic moieties and to produce a substantially crack-free silica dielectric film.

Abstract: The invention relates to the production of multilayered dielectric structures and to semiconductor devices and integrated circuits comprising these structures. The structures of the invention are prepared by adhering a porous dielectric layer to a substantially nonporous capping layer via an intermediate adhesion promoting dielectric layer. A multilayered dielectric structure is prepared which has a porous dielectric layer which has a porosity of about 10% or more; b) an adhesion promoting dielectric layer on the porous dielectric layer which has a porosity of about 10% or less; and a substantially nonporous capping layer on the adhesion promoting dielectric layer.

Abstract: A method for restoring hydrophobicity to the surfaces of organosilicate glass dielectric films which have been subjected to an etchant or ashing treatment. These films are used as insulating materials in the manufacture of integrated circuits to ensure low and stable dielectric properties in these films. The method deters the formation of stress-induced voids in these films. An organosilicate glass dielectric film is patterned to form vias and trenches by subjecting it to an etchant or ashing reagent in such a way as to remove at least a portion of previously existing carbon containing moieties and reduce hydrophobicity of said organosilicate glass dielectric film. The vias and trenches are thereafter filled with a metal and subjected to an annealing treatment.

Abstract: Low dielectric constant layered materials and a methof for making said layered materials comprising the steps of: a) providing a surface; b) spinning a dielectric material on to the surface; c) curing the dielectric material to form a dielectric layer; d) spinning a low dielectric constant material on to the dielectric layer; and e) curing the low dielectric constant material to form a low dielectric constant layer. Each layer can be spun-on to the layered component and subsequently cured before additional layers are added or all layers can be spun-on to the layered component and then the entire stack is cured at once.

Abstract: The present invention provides gas layer formation material selected from the group consisting of acenaphthylene homopolymers; acenaphthylene copolymers; poly(arylene ether); polyamide; B-staged multifunctional acrylate/methacrylate; crosslinked styrene divinyl benzene polymers; and copolymers of styrene and divinyl benzene with maleimide or bis-maleimides. The formed gas layers are used in microchips and multichip modules.

Abstract: The present invention provides a composition comprising: (a) dielectric material; and (b) porogen comprising at least two fused aromatic rings wherein each of the fused aromatic rings has at least one alkyl substituent thereon and a bond exists between at least two of the alkyl substituents on adjacent aromatic rings. Preferably, the dielectric material is a composition comprising (a) thermosetting component comprising (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II as set forth below where Q, G, h, I, I, and w are as set forth below and (b) porogen.

Abstract: A spin valve sensor for use with a data storage system includes free and pinned ferromagnetic (FM) layers, a conducting layer therebetween, contact leads, free layer biasing elements, and an anti-ferromagnetic (AFM) layer. The pinned layer has opposing ends, which define a width of an active region of the spin valve sensor having a giant magnetoresistive effect in response to applied magnetic fields. The free layer is positioned below the pinned layer and has opposing ends that extend beyond the active region. The contact leads abut the pinned layer and overlay portions of the conducting layer. The free layer biasing elements abut the ends of the free layer and bias a magnetization of the free layer in a longitudinal direction.