Abstract: A method includes receiving profile data of a plurality of features of a substrate. The method further includes generating a typical profile based on the profile data of the plurality of features. The method further includes generating a first array of features. Each of the first array of features is based on the typical profile. The method further includes providing the first array of features to a process model. The method further includes obtaining first output from the process model based on the first array of features. The method further includes causing performance of a corrective action in view of the first output from the process model.

Abstract: A method includes receiving, by a processing device, data indicative of a plurality of measurements of a profile of a substrate. The method further includes separating the data into a plurality of sets of data, a first set of the plurality of sets associated with a first region of the profile, and a second set of the plurality of sets associated with a second region of the profile. The method further includes fitting data of the first set to a first function to generate a first fit function. The first function is selected from a library of functions. The method further includes fitting data of the second set to a second function to generate a second fit function. The method further includes generating a piecewise functional fit of the profile of the substrate. The piecewise functional fit includes the first fit function and the second fit function.

Abstract: Implementations disclosed describe a method of using a model to predict a change of a physical state of a sample caused by one or more stages of a technological process in a substrate processing apparatus and obtaining imaging data associated with an actual performance of the one or more stages of the technological process. The imaging data includes a distribution of one or more chemical elements for a number of regions of the sample. The method further includes identifying, based on the imaging data, a difference between the predicted change of the physical state of the sample and an actual change of the physical state of the sample caused by the actual performance of the one or more stages of the technological process. The method further includes determining parameters of the model based on the identified difference.

Abstract: Implementations described herein generally relate to improving silicon wafer manufacturing. In one implementation, a method includes receiving data from one or more manufacturing tools about a manufacturing process of a silicon wafer. The method further includes determining, based on the data, predictive information about a quality of the silicon wafer. The method further includes providing the predictive information to a manufacturing system, wherein the predictive information is used to determine whether to take corrective action.

Abstract: Implementations described herein generally relate to improving silicon wafer manufacturing. In one implementation, a method includes receiving information describing a defect. The method further includes identifying a critical area of a silicon wafer and determining the probability of the defect occurring in the critical area. The method further includes determining, based on the probability, the likelihood of an open or a short occurring as a result of the defect occurring in the critical area. The method further includes providing, based on the likelihood, predictive information to a manufacturing system. In some embodiments, corrective action may be taken based on the predictive information in order to improve silicon wafer manufacturing.

Abstract: A method and system for determining a defect in a critical area in a multi-layer semiconductor substrate is disclosed. A server receives information describing a defect on a first layer of the semiconductor substrate. The server identifies a critical area of a second layer below the first layer of the semiconductor substrate determines a probability of the defect migrating from the first layer to the critical area of the second layer. The server determines, based on the probability, the likelihood of an open or a short occurring as a result of the defect occurring in the critical area. The server provides, based on the likelihood, predictive information to a manufacturing system, wherein corrective action is taken based on the predictive information in order to reduce or eliminate the likelihood of the open or short.

Abstract: Implementations described herein generally relate method for detecting excursions in time-series traces received from sensors of manufacturing tools. A server extracts one or more time series traces and metrology data collected from one or more sensors associated with one or more manufacturing tools configured to produce a silicon substrate. The server identifies one or more candidate excursions of the one or more time series traces by comparing the one or more time series traces to one or more traces associated with a working reference sensor. The server verifies that a candidate excursion of the one or more candidate excursions is a true excursion based on correlating the one or more time series traces to the metrology data. The server instructs a manufacturing system to take corrective action to remove the selected true excursion.

Abstract: A method for detecting a design-impacting defect in an integrated circuit substrate is disclosed. In one implementation, a controller determines a distribution of intended geometric features in a design window of the integrated circuit substrate based on proximities of a plurality of points of interest in the design window to the intended geometric features. The controller obtains a set of intended contours from the distribution. The controller obtains a set of imaged contours from one or more images of the integrated circuit substrate. The controller compares the set of imaged contours to the set of intended contours to obtain a set of potential design-impacting defects in the intended geometric features. The controller determines a probability that a potential design-impacting defect from the set of potential design-impacting defects is a valid design-impacting defect. The controller takes a corrective action based on the determined probability.

Abstract: Implementations described herein generally relate to detecting excursions in intended geometric features in an integrated circuit substrate. In one implementation, a method includes determining a set of suspect contours in a design window of the integrated circuit substrate based on proximities of a plurality of points of interest in the design window to intended geometric features. The method further includes obtaining a set of imaged contours from one or more images of a defect-free integrated circuit substrate. The method further includes comparing the set of imaged contours to the set of suspect contours to obtain a set of potential excursions from the imaged contours. The method further includes determining a probability that a potential excursion from the set of potential excursions is a valid excursion. The method further includes taking a corrective action based on the determined probability.

Abstract: Implementations described herein generally relate to detecting excursions in intended geometric features in an integrated circuit substrate. In one implementation, a method includes determining a set of suspect contours in a design window of the integrated circuit substrate based on proximities of a plurality of points of interest in the design window to intended geometric features. The method further includes obtaining a set of imaged contours from one or more images of a defect-free integrated circuit substrate. The method further includes comparing the set of imaged contours to the set of suspect contours to obtain a set of potential excursions from the imaged contours. The method further includes determining a probability that a potential excursion from the set of potential excursions is a valid excursion. The method further includes taking a corrective action based on the determined probability.

Abstract: Implementations described herein generally relate method for detecting excursions in time-series traces received from sensors of manufacturing tools. A server extracts one or more time series traces and metrology data collected from one or more sensors associated with one or more manufacturing tools configured to produce a silicon substrate. The server identifies one or more candidate excursions of the one or more time series traces by comparing the one or more time series traces to one or more traces associated with a working reference sensor. The server verifies that a candidate excursion of the one or more candidate excursions is a true excursion based on correlating the one or more time series traces to the metrology data. The server instructs a manufacturing system to take corrective action to remove the selected true excursion.

Abstract: A method and system for determining a defect in a critical area in a multi-layer semiconductor substrate is disclosed. A server receives information describing a defect on a first layer of the semiconductor substrate. The server identifies a critical area of a second layer below the first layer of the semiconductor substrate determines a probability of the defect migrating from the first layer to the critical area of the second layer. The server determines, based on the probability, the likelihood of an open or a short occurring as a result of the defect occurring in the critical area. The server provides, based on the likelihood, predictive information to a manufacturing system, wherein corrective action is taken based on the predictive information in order to reduce or eliminate the likelihood of the open or short.

Abstract: A method for detecting a design-impacting defect in an integrated circuit substrate is disclosed. In one implementation, a controller determines a distribution of intended geometric features in a design window of the integrated circuit substrate based on proximities of a plurality of points of interest in the design window to the intended geometric features. The controller obtains a set of intended contours from the distribution. The controller obtains a set of imaged contours from one or more images of the integrated circuit substrate. The controller compares the set of imaged contours to the set of intended contours to obtain a set of potential design-impacting defects in the intended geometric features. The controller determines a probability that a potential design-impacting defect from the set of potential design-impacting defects is a valid design-impacting defect. The controller takes a corrective action based on the determined probability.

Abstract: Implementations described herein generally relate to improving silicon wafer manufacturing. In one implementation, a method includes receiving data from one or more manufacturing tools about a manufacturing process of a silicon wafer. The method further includes determining, based on the data, predictive information about a quality of the silicon wafer. The method further includes providing the predictive information to a manufacturing system, wherein the predictive information is used to determine whether to take corrective action.

Abstract: Implementations described herein generally relate to improving silicon wafer manufacturing. In one implementation, a method includes receiving information describing a defect. The method further includes identifying a critical area of a silicon wafer and determining the probability of the defect occurring in the critical area. The method further includes determining, based on the probability, the likelihood of an open or a short occurring as a result of the defect occurring in the critical area. The method further includes providing, based on the likelihood, predictive information to a manufacturing system. In some embodiments, corrective action may be taken based on the predictive information in order to improve silicon wafer manufacturing.

Abstract: The present invention advantageously provides a substantially planarized semiconductor topography and method for making the same by forming a plurality of dummy features in a dielectric layer between a relatively wide interconnect and a series of relatively narrow interconnect. According to an embodiment, a plurality of laterally spaced dummy trenches are first etched in the dielectric layer between a relatively wide trench and a series of relatively narrow trenches. The dummy trenches, the wide trench, and the narrow trenches are filled with a conductive material, e.g., a metal. The conductive material is deposited to a level spaced above the upper surface of the dielectric layer. The surface of the conductive material is then polished to a level substantially coplanar with that of the upper surface of the dielectric layer. Advantageously, the polish rate of the conductive material above the dummy trenches and the wide and narrow trenches is substantially uniform.

Abstract: Disclosed is a system for detecting anomalies associated with a sample. The system includes an objective arranged proximate to a sample while the sample is undergoing chemical mechanical polishing and a beam source arranged to generate an incident beam and direct the incident beam through the objective and toward the sample while the sample is undergoing chemical mechanical polishing. The system also includes a sensor arranged to detect a scattered beam reflected from at least one anomaly associated with the sample while the sample is undergoing chemical mechanical polishing, the scattered beam being in response to the incident beam. The scattered beam indicates a characteristic of the anomaly, such as particle size.

Abstract: The present invention advantageously provides a substantially planarized semiconductor topography and method for making the same by selectively etching a dielectric layer to form a plurality of posts surrounded by trenches. The trenches are filled with a conductive material, such as a metal, deposited to a level spaced above the upper surfaces of the dielectric layer and the posts. The surface of the conductive material is then polished to a level substantially coplanar with the upper surfaces of the dielectric layer and the posts. Advantageously, the polish rate of the conductive material above the trenches is substantially uniform. In this manner, the topological surface of the resulting interconnect level is substantially void of surface disparity.

Abstract: The present invention advantageously provides a substantially planarized semiconductor topography and method for making the same by selectively etching a dielectric layer to form a plurality of posts surrounded by trenches. The trenches are filled with a conductive material, such as a metal, deposited to a level spaced above the upper surfaces of the dielectric layer and the posts. The surface of the conductive material is then polished to a level substantially coplanar with the upper surfaces of the dielectric layer and the posts. Advantageously, the polish rate of the conductive material above the trenches is substantially uniform. In this manner, the topological surface of the resulting interconnect level is substantially void of surface disparity.

Abstract: The present invention advantageously provides a substantially planarized semiconductor topography and method for making the same by forming a plurality of dummy features in a dielectric layer between a relatively wide interconnect and a series of relatively narrow interconnect. According to an embodiment, a plurality of laterally spaced dummy trenches are first etched in the dielectric layer between a relatively wide trench and a series of relatively narrow trenches. The dummy trenches, the wide trench, and the narrow trenches are filled with a conductive material, e.g., a metal. The conductive material is deposited to a level spaced above the upper surface of the dielectric layer. The surface of the conductive material is then polished to a level substantially coplanar with that of the upper surface of the dielectric layer. Advantageously, the polish rate of the conductive material above the dummy trenches and the wide and narrow trenches is substantially uniform.