Patents by Inventor Anantha Subramani
Anantha Subramani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240096605Abstract: Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool comprises a chamber, a pedestal in the chamber, and a first gas feed system on a first side of the pedestal. In an embodiment, the first gas feed system comprises a first exhaust line with a first valve to open and close the first exhaust line, and a first source gas feed line with a second valve to open and close the first source gas feed line. In an embodiment, the semiconductor processing tool further comprises a second gas feed system on a second side of the pedestal. In an embodiment, the second gas feed system comprises a second exhaust line with a third valve to open and close the second exhaust line, and a second source gas feed line with a fourth valve to open and close the second source gas feed line.Type: ApplicationFiled: September 16, 2022Publication date: March 21, 2024Inventors: Arun Kumar Kotrappa, CHANDRASHEKARA BAGINAGERE, RAMCHARAN SUNDAR, SEYYED FAZELI, ANANTHA SUBRAMANI, SIYU ZHU, AKHIL SINGHAL, PHILIP ALLAN KRAUS
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Publication number: 20240018646Abstract: Embodiments disclosed herein include semiconductor processing tools. In an embodiment, the semiconductor processing tool comprises a chamber, a chuck within the chamber, where the chuck is configured to rotate, a pedestal holder around the chuck, and a utility column coupled to the chuck. In an embodiment, the utility column comprises a magnetic coupler to enable rotation of portions of the utility column and the chuck, and a rotary electrical feedthrough.Type: ApplicationFiled: July 14, 2022Publication date: January 18, 2024Inventors: ANANTHA SUBRAMANI, YANG GUO, JOHN FORSTER, WADE HARRELSON, ANDREW TOMKO, ANTHONY CHAN, SATHYA SWAROOP GANTA, MIKE MURTAGH, SANJEEV BALUJA
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Publication number: 20230395356Abstract: A plasma treatment chamber comprises a chamber body having an opening in a top surface thereof. A rotatable pedestal is within the chamber body having a support surface to hold and rotate a workpiece in a processing region. A cross-flow pumping ring is over the opening in the chamber body to inject a gas flow in a direction generally parallel to and across a surface of the workpiece. A lid is over the cross-flow pumping ring, the lid having a plurality of microwave resonators to ignite the gas flow and form plasma.Type: ApplicationFiled: June 7, 2022Publication date: December 7, 2023Inventors: Anantha Subramani, Yang Guo, Seyyed Fazeli, Kelvin Chan, Chandrashekara Baginagere, Brian Alvarez, Philip Kraus
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Publication number: 20230282506Abstract: Embodiments disclosed herein include an electrostatic chuck. In an embodiment, the electrostatic chuck comprises a pedestal with a support surface for supporting a substrate and a second surface opposite from the support surface, and chucking electrode within the pedestal. In an embodiment, a biasing electrode is within the pedestal, and a heating element is within the pedestal. In an embodiment, the electrostatic chuck further comprises a shaft coupled to the second surface of the pedestal, and a rotation assembly coupled to the shaft to rotate the shaft and the pedestal.Type: ApplicationFiled: March 2, 2022Publication date: September 7, 2023Inventors: Anantha Subramani, Yang Guo, Seyyed Fazeli, Ramcharan Sundar, Arun Kumar Kotrappa
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Patent number: 11575071Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.Type: GrantFiled: June 29, 2021Date of Patent: February 7, 2023Assignee: Applied Materials, Inc.Inventors: Mingwei Zhu, Nag B. Patibandla, Rongjun Wang, Daniel Lee Diehl, Vivek Agrawal, Anantha Subramani
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Patent number: 11551905Abstract: Embodiments described herein include a resonant process monitor and methods of forming such a resonant process monitor. In an embodiment, the resonant process monitor includes a frame that has a first opening and a second opening. In an embodiment, a resonant body seals the first opening of the frame. In an embodiment, a first electrode on a first surface of the resonant body contacts the frame and a second electrode is on a second surface of the resonant body. Embodiments also include a back plate that seals the second opening of the frame. In an embodiment the back plate is mechanically coupled to the frame, and the resonant body, the back plate, and interior surfaces of the frame define a cavity.Type: GrantFiled: March 19, 2018Date of Patent: January 10, 2023Assignee: Intel CorporationInventors: Yaoling Pan, Vijaykumar Krithivasan, Shimin Mao, Kelvin Chan, Michael D. Willwerth, Anantha Subramani, Ashish Goel, Chih-shun Lu, Philip Allan Kraus, Patrick John Tae, Leonard Tedeschi
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Publication number: 20220155689Abstract: Some embodiments include a method of depositing a photoresist onto a substrate in a processing chamber. In an embodiment, the method comprises flowing an oxidant into the processing chamber through a first path in a showerhead, and flowing an organometallic into the processing chamber through a second path in the showerhead. In an embodiment, the first path is isolated from the second path so that the oxidant and the organometallic do not mix within the showerhead. In an embodiment, the method further comprises that the oxidant and the organometallic react in the processing chamber to deposit the photoresist on the substrate.Type: ApplicationFiled: October 22, 2021Publication date: May 19, 2022Inventors: Farzad Houshmand, Wayne French, Anantha Subramani, Kelvin Chan, Lakmal Charidu Kalutarage, Mark Joseph Saly
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Publication number: 20220049350Abstract: In an embodiment, the a semiconductor processing tool is disclosed. In an embodiment, the semiconductor processing tool comprises a chamber, and a displaceable column that passes through a surface of the chamber. In an embodiment, the column comprises a base plate, an insulator layer over the base plate, a pedestal over the insulator layer, and an edge ring surrounding a perimeter of the ground plate, the insulator and the pedestal. In an embodiment, a fluidic path is provided between the edge ring and the pedestal.Type: ApplicationFiled: July 13, 2021Publication date: February 17, 2022Inventors: Farzad Houshmand, Anantha Subramani, Kelvin Chan
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Publication number: 20210391156Abstract: Embodiments disclosed herein include a cleaning module for the exhaust line of a chamber. In an embodiment, a mobile cleaning module comprises a chamber where the chamber comprises a first opening and a second opening. In an embodiment, the cleaning module further comprises a lid to seal the first opening. In an embodiment, the lid comprises a dielectric plate, a dielectric resonator coupled to the dielectric plate, a monopole antenna positioned in a hole into the dielectric resonator, and a conductive layer surrounding the dielectric resonator.Type: ApplicationFiled: June 10, 2020Publication date: December 16, 2021Inventors: Kelvin Chan, Philip Allan Kraus, Thai Cheng Chua, Hanh Nguyen, Anantha Subramani
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Publication number: 20210328104Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.Type: ApplicationFiled: June 29, 2021Publication date: October 21, 2021Inventors: Mingwei Zhu, Nag B. Patibandla, Rongjun Wang, Daniel Lee Diehl, Vivek Agrawal, Anantha Subramani
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Patent number: 11081623Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.Type: GrantFiled: December 19, 2019Date of Patent: August 3, 2021Assignee: Applied Materials, Inc.Inventors: Mingwei Zhu, Nag B. Patibandla, Rongjun Wang, Daniel Lee Diehl, Vivek Agrawal, Anantha Subramani
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Patent number: 11011676Abstract: Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.Type: GrantFiled: June 15, 2016Date of Patent: May 18, 2021Assignee: Applied Materials, Inc.Inventors: Mingwei Zhu, Rongjun Wang, Nag B. Patibandla, Xianmin Tang, Vivek Agrawal, Cheng-Hsiung Tsai, Muhammad Rasheed, Dinesh Saigal, Praburam Gopal Raja, Omkaram Nalamasu, Anantha Subramani
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Patent number: 10957565Abstract: Embodiments include systems, devices, and methods for monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a processing tool includes a processing chamber having a liner wall around a chamber volume, and a monitoring device having a sensor exposed to the chamber volume through a hole in the liner wall. The sensor is capable of measuring, in real-time, material deposition and removal rates occurring within the chamber volume during the wafer fabrication process. The monitoring device can be moved relative to the hole in the liner wall to selectively expose either the sensor or a blank area to the chamber volume through the hole. Accordingly, the wafer fabrication process being performed in the chamber volume may be monitored by the sensor, and the sensor may be sealed off from the chamber volume during an in-situ chamber cleaning process. Other embodiments are also described and claimed.Type: GrantFiled: July 28, 2020Date of Patent: March 23, 2021Assignee: Applied Materials, Inc.Inventors: Shimin Mao, Simon Huang, Ashish Goel, Anantha Subramani, Philip Allan Kraus
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Patent number: 10903067Abstract: In one embodiment, an adapter plate for a deposition chamber is provided. The adapter plate comprises a body, a mounting plate centrally located on the body, a first annular portion extending longitudinally from a first surface of the mounting plate and disposed radially inward from an outer surface of the mounting plate, a second annular portion extending longitudinally from an opposing second surface of the mounting plate and disposed radially inward from the outer surface of the mounting plate, and a mirror-finished surface disposed on the interior of the second annular portion, the mirror-finished surface having an average surface roughness of 6 Ra or less.Type: GrantFiled: November 26, 2019Date of Patent: January 26, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Ashish Goel, Anantha Subramani, Maurice E. Ewert
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Publication number: 20200357669Abstract: Embodiments include systems, devices, and methods for monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a processing tool includes a processing chamber having a liner wall around a chamber volume, and a monitoring device having a sensor exposed to the chamber volume through a hole in the liner wall. The sensor is capable of measuring, in real-time, material deposition and removal rates occurring within the chamber volume during the wafer fabrication process. The monitoring device can be moved relative to the hole in the liner wall to selectively expose either the sensor or a blank area to the chamber volume through the hole. Accordingly, the wafer fabrication process being performed in the chamber volume may be monitored by the sensor, and the sensor may be sealed off from the chamber volume during an in-situ chamber cleaning process. Other embodiments are also described and claimed.Type: ApplicationFiled: July 28, 2020Publication date: November 12, 2020Inventors: Shimin Mao, Simon Huang, Ashish Goel, Anantha Subramani, Philip Allan Kraus
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Patent number: 10763143Abstract: Embodiments include systems, devices, and methods for monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a processing tool includes a processing chamber having a liner wall around a chamber volume, and a monitoring device having a sensor exposed to the chamber volume through a hole in the liner wall. The sensor is capable of measuring, in real-time, material deposition and removal rates occurring within the chamber volume during the wafer fabrication process. The monitoring device can be moved relative to the hole in the liner wall to selectively expose either the sensor or a blank area to the chamber volume through the hole. Accordingly, the wafer fabrication process being performed in the chamber volume may be monitored by the sensor, and the sensor may be sealed off from the chamber volume during an in-situ chamber cleaning process. Other embodiments are also described and claimed.Type: GrantFiled: August 18, 2017Date of Patent: September 1, 2020Assignee: Applied Materials, Inc.Inventors: Shimin Mao, Simon Huang, Ashish Goel, Anantha Subramani, Philip Allan Kraus
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Publication number: 20200127164Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.Type: ApplicationFiled: December 19, 2019Publication date: April 23, 2020Inventors: Mingwei Zhu, Nag B. Patibandla, Rongjun Wang, Daniel Lee Diehl, Vivek Agrawal, Anantha Subramani
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Publication number: 20200098559Abstract: In one embodiment, an adapter plate for a deposition chamber is provided. The adapter plate comprises a body, a mounting plate centrally located on the body, a first annular portion extending longitudinally from a first surface of the mounting plate and disposed radially inward from an outer surface of the mounting plate, a second annular portion extending longitudinally from an opposing second surface of the mounting plate and disposed radially inward from the outer surface of the mounting plate, and a mirror-finished surface disposed on the interior of the second annular portion, the mirror-finished surface having an average surface roughness of 6 Ra or less.Type: ApplicationFiled: November 26, 2019Publication date: March 26, 2020Inventors: Ashish GOEL, Anantha SUBRAMANI, Maurice E. EWERT
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Patent number: 10546973Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.Type: GrantFiled: February 1, 2019Date of Patent: January 28, 2020Assignee: Applied Materials, Inc.Inventors: Mingwei Zhu, Nag B. Patibandla, Rongjun Wang, Daniel Lee Diehl, Vivek Agrawal, Anantha Subramani
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Patent number: 10504719Abstract: In one embodiment, an adapter plate for a deposition chamber is provided. The adapter plate comprises a body, a mounting plate centrally located on the body, a first annular portion extending longitudinally from a first surface of the mounting plate and disposed radially inward from an outer surface of the mounting plate, a second annular portion extending longitudinally from an opposing second surface of the mounting plate and disposed radially inward from the outer surface of the mounting plate, and a mirror-finished surface disposed on the interior of the first annular portion, the mirror-finished surface having an average surface roughness of 6 Ra or less.Type: GrantFiled: March 7, 2013Date of Patent: December 10, 2019Assignee: Applied Materials, Inc.Inventors: Ashish Goel, Anantha Subramani, Maurice E. Ewert