Patents by Inventor Ananthakrishnan Srinivasan

Ananthakrishnan Srinivasan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11944023
    Abstract: The invention relates to a non-volatile resistive random access memory (ReRAM), a non-volatile ReRAM composition and to a method for manufacturing a non-volatile non-volatile ReRAM. The ReRAM includes a first electrode, a second electrode and a resistive switching/active layer which is located between the first and second electrodes. The switching layer contains chitosan and aluminium doped/incorporated zinc oxide. The switching/active layer may be configured to perform a switching operation according to an applied voltage. The switching/active layer may be in the form of a film. The switching/active layer may be coated/applied onto the first electrode and the second electrode may be placed/applied/provided over the switching/active layer such that the switching/active layer is located/wedged in-between the two electrodes.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: March 26, 2024
    Assignee: University of South Africa
    Inventors: Ananthakrishnan Srinivasan, Sreedevi Vallabhapurapu, Vijaya Srinivasu Vallabhapurapu
  • Publication number: 20210399218
    Abstract: The invention relates to a non-volatile resistive random access memory (ReRAM), a non-volatile ReRAM composition and to a method for manufacturing a non-volatile non-volatile ReRAM. The ReRAM includes a first electrode, a second electrode and a resistive switching/active layer which is located between the first and second electrodes. The switching layer contains chitosan and aluminium doped/incorporated zinc oxide. The switching/active layer may be configured to perform a switching operation according to an applied voltage. The switching/active layer may be in the form of a film. The switching/active layer may be coated/applied onto the first electrode and the second electrode may be placed/applied/provided over the switching/active layer such that the switching/active layer is located/wedged in-between the two electrodes.
    Type: Application
    Filed: November 26, 2019
    Publication date: December 23, 2021
    Applicant: University of South Africa
    Inventors: Ananthakrishnan Srinivasan, Sreedevi Vallabhapurapu, Vijaya Srinivasu Vallabhapurapu