Abstract: There is provided a solid electrolyte including at least one layer with no nitrogen and which includes LixPOySz, with 0<z?3, 2.1?x?2.4, and 1?y?4. A battery including the electrolyte, and a method for producing the electrolyte, are also provided.

Abstract: The present invention relates to a gas diffusion layer for a fuel cell, made of a carbon substrate grafted with at least one aromatic group having formula (II): wherein: the asterisk * designates a carbon atom with no hydrogen and no Ri group, with i=1 to 5, and covalently bonded to the carbon substrate; at least two of the R1, R2, R3, R4, and R5 groups are different from a hydrogen atom; at least two of the R1, R2, R3, R4, and R5 groups are hydrophobic groups or hydrophilic groups or a hydrophobic group and a hydrophilic group.

Abstract: There is provided a solid electrolyte including at least one layer with no nitrogen and which includes LixPOySz, with 0<z?3, 2.1?x?2.4, and 1?y?4. A battery including the electrolyte, and a method for producing the electrolyte, are also provided.

Abstract: An electrode active material including a vanadium oxide represented by Formula 1, VOx??Formula 1 wherein vanadium in the vanadium oxide has a mixed oxidation state of a plurality of oxidation numbers, and the oxidation numbers include an oxidation number of +3, and wherein, in Formula 1 above, 1.5<x<2.5.

Abstract: The present invention relates to a gas diffusion layer for a fuel cell, made of a carbon substrate grafted with at least one aromatic group having formula (II): wherein: the asterisk * designates a carbon atom with no hydrogen and no Ri group, with i=1 to 5, and covalently bonded to the carbon substrate; at least two of the R1, R2, R3, R4, and R5 groups are different from a hydrogen atom; at least two of the R1, R2, R3, R4, and R5 groups are hydrophobic groups or hydrophilic groups or a hydrophobic group and a hydrophilic group.

Abstract: A thin film, a method of forming the thin film, a semiconductor device including the thin film, and a method of manufacturing the semiconductor device include forming a thin film including a metal oxynitride, and treating the thin film with inert gas ions so as to stabilize properties of the thin film. The metal oxynitride may include zinc oxynitride (ZnOxNy). The inert gas ions may include at least one of Ar ions and Ne ions. The treating of the thin film with the inert gas ions may be performed by a sputtering process, a plasma treatment process, or the like.

Abstract: A porous carbonaceous composite material, a positive electrode and lithium air battery including the porous carbonaceous composite material, and a method of preparing the porous carbonaceous composite material. The porous carbonaceous composite material includes a carbon nanotube (CNT); and a modified carbonaceous material doped with a heterogeneous element, wherein the ratio of the number of surface oxygen atoms to the number of surface carbon atoms ranges upward from about 2 atom %.

Abstract: Disclosed herein is a nanostructured thin film. The nanostructured thin film comprises a nanoparticle layer and a number of micro-undulated surfaces formed on the nanoparticle layer. The two micro-undulated structures of the nanostructured thin film are uniformly introduced over a large area. This configuration makes it easy to control the surface properties of the nanostructured thin film. Therefore, the nanostructured thin film can be widely applied to a variety of devices. Also disclosed herein is a method for controlling the surface properties of the nanostructured thin film.

Abstract: An electrode active material including a vanadium oxide represented by Formula 1, VOx??Formula 1 wherein vanadium in the vanadium oxide has a mixed oxidation state of a plurality of oxidation numbers, and the oxidation numbers include an oxidation number of +3, and wherein, in Formula 1 above, 1.5<x<2.5.

Abstract: A thin film, a method of forming the thin film, a semiconductor device including the thin film, and a method of manufacturing the semiconductor device include forming a thin film including a metal oxynitride, and treating the thin film with inert gas ions so as to stabilize properties of the thin film. The metal oxynitride may include zinc oxynitride (ZnOxNy). The inert gas ions may include at least one of Ar ions and Ne ions. The treating of the thin film with the inert gas ions may be performed by a sputtering process, a plasma treatment process, or the like.

Abstract: A porous carbonaceous composite material, a positive electrode and lithium air battery including the porous carbonaceous composite material, and a method of preparing the porous carbonaceous composite material. The porous carbonaceous composite material includes a carbon nanotube (CNT); and a modified carbonaceous material doped with a heterogeneous element, wherein the ratio of the number of surface oxygen atoms to the number of surface carbon atoms ranges upward from about 2 atom %.

Abstract: Transistors and electronic apparatuses including the same are provided, the transistors include a channel layer on a substrate. The channel layer includes a zinc (Zn)-containing oxide. The transistors include a source and a drain, respectively, contacting opposing ends of the channel layer, a gate corresponding to the channel layer, and a gate insulating layer insulating the channel layer from the gate. The channel layer has a first surface adjacent to the substrate, a second surface facing the first surface, and a channel layer-protection portion on the second surface. The channel layer-protection portion includes a fluoride material.

Abstract: Transistors and electronic apparatuses including the same are provided, the transistors include a channel layer on a substrate. The channel layer includes a zinc (Zn)-containing oxide. The transistors include a source and a drain, respectively, contacting opposing ends of the channel layer, a gate corresponding to the channel layer, and a gate insulating layer insulating the channel layer from the gate. The channel layer has a first surface adjacent to the substrate, a second surface facing the first surface, and a channel layer-protection portion on the second surface. The channel layer-protection portion includes a fluoride material.

Abstract: Disclosed herein is a nanostructured thin film. The nanostructured thin film comprises a nanoparticle layer and a number of micro-undulated surfaces formed on the nanoparticle layer. The two micro-undulated structures of the nanostructured thin film are uniformly introduced over a large area. This configuration makes it easy to control the surface properties of the nanostructured thin film. Therefore, the nanostructured thin film can be widely applied to a variety of devices. Also disclosed herein is a method for controlling the surface properties of the nanostructured thin film.