Patents by Inventor Anastasia AGNES

Anastasia AGNES has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • InP-based nanocluster, and method of preparing InP-based nanoparticle
    Patent number: 11746289
    Abstract: The invention relates to InP-based nanoclusters that include indium and phosphorus and further include zinc, chlorine, or a combination thereof, and to a method of preparing the InP-based nanoparticles including heating the InP-based nanoclusters in the presence of zinc, chlorine, or a combination thereof.
    Type: Grant
    Filed: August 20, 2021
    Date of Patent: September 5, 2023
    Assignees: SAMSUNG ELECTRONICS CO., LTD., POSTECH, RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
    Inventors: Yong Wook Kim, Yong Ju Kwon, Sungjee Kim, Jihyun Min, Yuho Won, Eun Joo Jang, Hyo Sook Jang, Eunjae Lee, Kyuhyun Bang, Anastasia Agnes, Jeongmin Kim
  • InP-based NANOCLUSTER, AND METHOD OF PREPARING InP-based NANOPARTICLE
    Publication number: 20220056338
    Abstract: The invention relates to InP-based nanoclusters that include indium and phosphorus and further include zinc, chlorine, or a combination thereof, and to a method of preparing the InP-based nanoparticles including heating the InP-based nanoclusters in the presence of zinc, chlorine, or a combination thereof.
    Type: Application
    Filed: August 20, 2021
    Publication date: February 24, 2022
    Inventors: Yong Wook KIM, Yong ju KWON, Sungjee KIM, Jihyun MIN, Yuho WON, Eun Joo JANG, Hyo Sook JANG, Eunjae LEE, Kyuhyun BANG, Anastasia AGNES, Jeongmin KIM