Patents by Inventor Anatoli A. Korkin

Anatoli A. Korkin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multi-state magnetoresistance random access cell with improved memory storage density
    Patent number: 7465589
    Abstract: A multi-state magnetoresistive random access memory device having a pinned ferromagnetic region with a magnetic moment vector fixed in a preferred direction in the absence of an applied magnetic field, a non-ferromagnetic spacer layer positioned on the pinned ferromagnetic region, and a free ferromagnetic region with an anisotropy designed to provide a free magnetic moment vector within the free ferromagnetic region with N stable positions, wherein N is a whole number greater than two, positioned on the non-ferromagnetic spacer layer. The number N of stable positions can be induced by a shape anisotropy of the free ferromagnetic region wherein each N stable position has a unique resistance value.
    Type: Grant
    Filed: August 25, 2005
    Date of Patent: December 16, 2008
    Assignee: EverSpin Technologies, Inc.
    Inventors: Jon M. Slaughter, Anatoli A. Korkin, legal representative, Herbert Goronkin, Leonid Savtchenko
  • Magneto resistance random access memory element
    Patent number: 7184300
    Abstract: A method to switch a scalable magnetoresistive memory cell including the steps of providing a magnetoresistive memory device sandwiched between a word line and a digit line so that current waveforms can be applied to the word and digit lines at various times to cause a magnetic field flux to rotate the effective magnetic moment vector of the device by approximately 180°. The magnetoresistive memory device includes N ferromagnetic layers that are anti-ferromagnetically coupled. N can be adjusted to change the magnetic switching volume of the device.
    Type: Grant
    Filed: January 9, 2003
    Date of Patent: February 27, 2007
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Anatoli Korkin, legal representative, Bradley N. Engel, Nicholas D. Rizzo, Mark F. Deherrera, Jason Allen Janesky, Leonid Savtchenko, deceased
  • Multi-state magnetoresistance random access cell with improved memory storage density
    Patent number: 7095646
    Abstract: A multi-state magnetoresistive random access memory device having a pinned ferromagnetic region with a magnetic moment vector fixed in a preferred direction in the absence of an applied magnetic field, an non-ferromagnetic spacer layer positioned on the pinned ferromagnetic region, and a free ferromagnetic region with an anisotropy designed to provide a free magnetic moment vector within the free ferromagnetic region with N stable positions, wherein N is a whole number greater than two, positioned on the non-ferromagnetic spacer layer. The number N of stable positions can he induced by a shape anisotropy of the free ferromagnetic region wherein each N stable position has a unique resistance value.
    Type: Grant
    Filed: July 17, 2002
    Date of Patent: August 22, 2006
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Jon M. Slaughter, Anatoli A. Korkin, legal representative, Herbert Goronkin, Leonid Savtchenko, deceased
  • Multi-state magnetoresistance random access cell with improved memory storage density
    Publication number: 20060017083
    Abstract: A multi-state magnetoresistive random access memory device having a pinned ferromagnetic region with a magnetic moment vector fixed in a preferred direction in the absence of an applied magnetic field, a non-ferromagnetic spacer layer positioned on the pinned ferromagnetic region, and a free ferromagnetic region with an anisotropy designed to provide a free magnetic moment vector within the free ferromagnetic region with N stable positions, wherein N is a whole number greater than two, positioned on the non-ferromagnetic spacer layer. The number N of stable positions can be induced by a shape anisotropy of the free ferromagnetic region wherein each N stable position has a unique resistance value.
    Type: Application
    Filed: August 25, 2005
    Publication date: January 26, 2006
    Inventors: Jon Slaughter, Leonid Savtchenko, Anatoli Korkin, Herbert Goronkin
  • Multi-state magnetoresistance random access cell with improved memory storage density
    Publication number: 20040012994
    Abstract: A multi-state magnetoresistive random access memory device comprising a pinned ferromagnetic region having a magnetic moment vector fixed in a preferred direction in the absence of an applied magnetic field, an non-ferromagnetic spacer layer positioned on the pinned ferromagnetic region, and a free ferromagnetic region with an anisotropy designed to provide a free magnetic moment vector within the free ferromagnetic region with N stable positions, wherein N is a whole number greater than two, positioned on the non-ferromagnetic spacer layer. The number N of stable positions can be induced by a shape anisotropy of the free ferromagnetic region wherein each N stable position has a unique resistance value.
    Type: Application
    Filed: July 17, 2002
    Publication date: January 22, 2004
    Inventors: Jon M. Slaughter, Leonid Savtchenko, Herber Goronkin, Anatoli A. Korkin
  • Method of writing to a scalable magnetoresistance random access memory element
    Publication number: 20030128603
    Abstract: A method to switch a scalable magnetoresistive memory cell including the steps of providing a magnetoresistive memory device sandwiched between a word line and a digit line so that current waveforms can be applied to the word and digit lines at various times to cause a magnetic field flux to rotate the effective magnetic moment vector of the device by approximately 180°. The magnetoresistive memory device includes N ferromagnetic layers that are anti-ferromagnetically coupled. N can be adjusted to change the magnetic switching volume of the device.
    Type: Application
    Filed: January 9, 2003
    Publication date: July 10, 2003
    Inventors: Leonid Savtchenko, Anatoli A. Korkin, Bradley N. Engel, Nicholas D. Rizzo, Mark F. Deherrera, Jason Allen Janesky
  • METHOD OF WRITING TO SCALABLE MAGNETORESISTANCE RANDOM ACCESS MEMORY ELEMENT
    Publication number: 20030072174
    Abstract: A method to switch a scalable magnetoresistive memory cell including the steps of providing a magnetoresistive memory device sandwiched between a word line and a digit line so that current waveforms can be applied to the word and digit lines at various times to cause a magnetic field flux to rotate the effective magnetic moment vector of the device by approximately 180°. The magnetoresistive memory device includes N ferromagnetic layers that are anti-ferromagnetically coupled. N can be adjusted to change the magnetic switching volume of the device.
    Type: Application
    Filed: October 16, 2001
    Publication date: April 17, 2003
    Inventors: Leonid Savtchenko, Anatoli A. Korkin, Bradley N. Engel, Nicholas D. Rizzo, Mark F. Deherrera, Jason Allen Janesky