Abstract: A semiconductor photovoltaic generator is proposed which comprises a plurality of photovoltaic converters interconnected in series along their opposite surfaces by current-collecting contacts to form a monolithic structure. Every photovoltaic converter is provided with a p-n junction between the base and inverse regions. The photo-active face of the generator is made as a staircase-type structure. The area of every step is inversely proportional to the intensity of incident radiation and the width of the step is about equal to, or smaller than, the diffusion distance of minority carriers in the base region.

Abstract: A semiconductor photoelectric generator, for converting radiation energy from a source, for example, the sun, into electric energy, comprises a matrix of photo electric converters made of a semiconductor material. Each photoelectric converter is doped to form a P-N junction and an isotype junction. Current-collecting conductors are connected to a base region and to an alloy region. An operating surface of the semiconductor photoelectric generator is secured by a translucent adhesive layer to a coating exposed directly to radiation from a radiation source. The coating is composed of optical concentrators which focus the radiation energy in a focal spot and are disposed on the operating surface so that the absorption band of the focussed radiation in the focal spot is located in the base region and is spaced from the P-N junction by a distance not exceeding the diffusion length of the minority carriers in the base region.