Patents by Inventor Anatoly B. Grudinin

Anatoly B. Grudinin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor saturable absorber reflector and method to fabricate thereof
    Patent number: 8179943
    Abstract: A design of a semiconductor saturable absorber that offers a convenient and reliable way to control/decrease the recovery time of the absorption. The absorption recovery time is controlled during the epitaxial growth by using lattice-mismatched layer(s) to induce dislocations, and implicitly non-radiative recombination centers within the nonlinear absorbing region. These lattice reformation layer(s) are interposed between the distributed Bragg reflector and the nonlinear absorption region, containing quantum-wells, quantum-dots or bulk semiconductor material. The thickness and composition of the lattice reformation layer(s) is an instrumental to control the amount of non-radiative recombination centers used to trap the optically excited carriers generated in the absorption region.
    Type: Grant
    Filed: April 6, 2005
    Date of Patent: May 15, 2012
    Assignee: Reflekron Ltd.
    Inventors: Oleg Okhotnikov, Mircea Guina, Anatoly B. Grudinin
  • Semiconductor Saturable Absorber Reflector and Method to Fabricate Thereof
    Publication number: 20090296767
    Abstract: A design of a semiconductor saturable absorber that offers a convenient and reliable way to control/decrease the recovery time of the absorption. The absorption recovery time is controlled during the epitaxial growth by using lattice-mismatched layer(s) to induce dislocations, and implicitly non-radiative recombination centers within the nonlinear absorbing region. These lattice reformation layer(s) are interposed between the distributed Bragg reflector and the nonlinear absorption region, containing quantum-wells, quantum-dots or bulk semiconductor material. The thickness and composition of the lattice reformation layer(s) is an instrumental to control the amount of non-radiative recombination centers used to trap the optically excited carriers generated in the absorption region.
    Type: Application
    Filed: April 6, 2005
    Publication date: December 3, 2009
    Applicant: REFLEKRON OY
    Inventors: Oleg Okhotnikov, Mircea Guina, Anatoly B. Grudinin