Patents by Inventor Anatoly Vedyaev

Anatoly Vedyaev has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetoresistive tunnel junction magnetic device and its application to MRAM
    Patent number: 7821818
    Abstract: The magnetic device comprises a magnetic device comprising a magnetoresistive tunnel junction (100), itself comprising: a reference magnetic layer (120) having magnetization in a direction that is fixed; a storage magnetic layer (110) having magnetization in a direction that is variable; and an intermediate layer (130) acting as a tunnel barrier that is essentially semiconductor or electrically insulating and that separates the reference magnetic layer (120) from the storage magnetic layer (110). The potential profile of the intermediate layer (130) is asymmetrical across the thickness of said layer (130) so as to produce a current response that is asymmetrical as a function of the applied voltage. The device is applicable to magnetic random access memories.
    Type: Grant
    Filed: October 13, 2006
    Date of Patent: October 26, 2010
    Assignees: Comissariat a l'Energie Atomique et aux Energies Alternatives, Centre National de la Recherche Scientifique (CNRS)
    Inventors: Bernard Dieny, Anatoly Vedyaev, Jérôme Faure-Vincent, Patrick Warin, Matthieu Jamet, Yves Samson
  • Magnetoresistive Tunnel Junction Magnetic Device and Its Application to MRAM
    Publication number: 20090231909
    Abstract: The magnetic device comprises a magnetic device comprising a magnetoresistive tunnel junction (100), itself comprising: a reference magnetic layer (120) having magnetization in a direction that is fixed; a storage magnetic layer (110) having magnetization in a direction that is variable; and an intermediate layer (130) acting as a tunnel barrier that is essentially semiconductor or electrically insulating and that separates the reference magnetic layer (120) from the storage magnetic layer (110). The potential profile of the intermediate layer (130) is asymmetrical across the thickness of said layer (130) so as to produce a current response that is asymmetrical as a function of the applied voltage. The device is applicable to magnetic random access memories.
    Type: Application
    Filed: October 13, 2006
    Publication date: September 17, 2009
    Applicants: Commissariat a l'Energie Atomique, Centre National de La Recherche Scientifique (CNRS)
    Inventors: Bernard Dieny, Anatoly Vedyaev, Jerome Faure-Vincent, Patrick Warin, Matthieu Jamet, Yves Samson
  • Magnetoresistor with tunnel effect and magnetic sensor using same
    Patent number: 6462641
    Abstract: Tunnel effect magnetoresistance comprising, in the form of a stack: a first layer (12) of free magnetisation magnetic material, a “barrier” layer (16), composed of an electrically insulating material, and a second layer (14) of trapped magnetisation magnetic material, According to the invention, the thickness of the first layer (12) of magnetic material is less than 10 nm. The invention may be particularly applied to the manufacture of magnetic data read heads.
    Type: Grant
    Filed: October 23, 2000
    Date of Patent: October 8, 2002
    Assignee: Commissariat A L'Energie Atomique
    Inventors: Bernard Dieny, Laurence Giacomoni, Anatoly Vedyaev