Patents by Inventor Anchal Agarwal

Anchal Agarwal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to achieve active p-type layer/layers in III-nitrtde epitaxial or device structures having buried p-type layers
    Patent number: 11588096
    Abstract: An optoelectronic or electronic device structure, including an active region on or above a polar substrate, wherein the active region comprises a polar p region. The device structure further includes a hole supply region on or above the active region. Holes in the hole supply region are driven by a field into the active region, the field arising at least in part due to a piezoelectric and/or spontaneous polarization field generated by a composition and grading of the active region.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: February 21, 2023
    Assignee: The Regents of the University of California
    Inventors: Yuuki Enatsu, Chirag Gupta, Stacia Keller, Umesh K. Mishra, Anchal Agarwal
  • METHOD TO ACHIEVE ACTIVE P-TYPE LAYER/LAYERS IN III-NITRIDE EPITAXIAL OR DEVICE STRUCTURES HAVING BURIED P-TYPE LAYERS
    Publication number: 20190181329
    Abstract: An optoelectronic or electronic device structure, including an active region on or above a polar substrate, wherein the active region comprises a polar p region. The device structure further includes a hole supply region on or above the active region. Holes in the hole supply region are driven by a field into the active region, the field arising at least in part due to a piezoelectric and/or spontaneous polarization field generated by a composition and grading of the active region.
    Type: Application
    Filed: April 11, 2017
    Publication date: June 13, 2019
    Inventors: Yuuki Enatsu, Chirag Gupta, Stacia Keller, Umesh K. Mishra, Anchal Agarwal