Patents by Inventor Anders Mikkelsen

Anders Mikkelsen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for metal-free synthesis of epitaxial semiconductor nanowires on si
    Patent number: 8691011
    Abstract: The present invention relates to epitaxial growth of nanowires on a substrate. In particular the invention relates to growth of nanowires on an Si-substrate without using Au as a catalyst. In the method according to the invention an oxide template is provided on a passivated surface of the substrate. The oxide template defines a plurality of nucleation onset positions for subsequent nanowire growth. According to one embodiment a thin organic film is used to form the oxide template.
    Type: Grant
    Filed: March 7, 2007
    Date of Patent: April 8, 2014
    Assignee: QuNano AB
    Inventors: Lars Samuelson, Thomas Mårtensson, Werner Seifert, Anders Mikkelsen, Bernhard Mandl
  • Nanostructured memory device
    Patent number: 8212237
    Abstract: The present invention provides a nanostructured memory device comprising at least one semiconductor nanowire (3) forming a current transport channel, one or more shell layers (4) arranged around at least a portion of the nanowire (3), and nano-sized charge trapping centers (10) embedded in said one or more shell layers (4), and one or more gate electrodes (14) arranged around at least a respective portion of said one or more shell layers (4). Preferably said one or more shell layers (4) are made of a wide band gap material or an insulator. The charge trapping centers (10) may be charged/written by using said one or more gate electrodes (14) and a change in an amount of charge stored in one or more of the charge trapping centers (10) alters the conductivity of the nanowire (3).
    Type: Grant
    Filed: July 2, 2009
    Date of Patent: July 3, 2012
    Assignee: QuNano AB
    Inventors: Lars Samuelson, Claes Thelander, Jonas Ohlsson, Anders Mikkelsen
  • NANOSTRUCTURED MEMORY DEVICE
    Publication number: 20110140086
    Abstract: The present invention provides a nanostructured memory device comprising at least one semiconductor nanowire (3) forming a current transport channel, one or more shell layers (4) arranged around at least a portion of the nanowire (3), and nano-sized charge trapping centres (10) embedded in said one or more shell layers (4), and one or more gate electrodes (14) arranged around at least a respective portion of said one or more shell layers (4). Preferably said one or more shell layers (4) are made of a wide band gap material or an insulator. The charge trapping centres (10) may be charged/written by using said one or more gate electrodes (14) and a change in an amount of charge stored in one or more of the charge trapping centres (10) alters the conductivity of the nanowire (3).
    Type: Application
    Filed: July 2, 2009
    Publication date: June 16, 2011
    Applicant: QuNano AB
    Inventors: Lars Samuelson, Claes Thelander, Jonas Ohlsson, Anders Mikkelsen
  • Method for Metal-Free Synthesis of Epitaxial Semiconductor Nanowires on Si
    Publication number: 20090301389
    Abstract: The present invention relates to epitaxial growth of nanowires on a substrate. In particular the invention relates to growth of nanowires on an Si-substrate without using Au as a catalyst. In the method according to the invention an oxide template is provided on a passivated surface of the substrate. The oxide template defines a plurality of nucleation onset positions for subsequent nanowire growth. According to one embodiment a thin organic film is used to form the oxide template.
    Type: Application
    Filed: March 7, 2007
    Publication date: December 10, 2009
    Inventors: Lars Samuelson, Thomas Mårtensson, Werner Seifert, Anders Mikkelsen, Bernhard Mandl