Abstract: A method and system for a high-speed datapath for a high-performance pattern generator such as an analog SLM for generating the image is disclosed. The data path has provisions for completely independent parallel data flows giving true scalability to arbitrarily high throughput. In an exemplary embodiment areas on the SLM are assigned to specific rasterizing and fracturing processors. There is an overlap between fields for blending of the edges in the pattern and for computation of interaction between features in the pattern. The datapath has data integrity checks and a recovery mode when an error condition is raised, allowing it to recover from most errors without creating new errors.

Abstract: An aspect of the present invention includes a method for patterning a workpiece covered at least partly with a layer sensitive to electromagnetic radiation, comprising the actions of, providing a data representation of at least one image to be imaged onto a plurality of locations of said workpiece, fracturing said data representation into a plurality of field stripes, repeating the actions of rasterizing a first field stripe of said data representation, modulating a modulator according to said rasterized field stripe, imaging said first field stripe onto a plurality of locations of said workpiece, rasterizing a second field stripe of said data representation while imaging said first field stripe onto said plurality of locations of said workpiece, terminating the repetition when a predetermined amount of said image is imaged onto said plurality of locations of said workpiece. Other aspects of the present invention are reflected in the detailed description, figures and claims.

Abstract: The invention relates to microlithography, in particular to the writing of photomasks for computer displays, microelectronic devices, and precision photoetching. It is also applicable to wafers, optical devices and a variety of electronic interconnection structures such as multichip modules. Other applications are possible, such as printing and graphics, as well as laser projection displays. In the present invention the data conversion is divided in two steps: first cutting the geometries in scan lines and simplifying them, and then finishing the conversion of the scan lines at the point of demand, i.e. in a beam processor in the driving electronics for each beam. The idea is to make as much as possible of the conversion at the latest possible point, i.e. at the beams. What is needed at an earlier stage is to separate the data for different beams and distribute them, and to simplify the data enough to make sure that the beam processors can always handle the data flow.

Abstract: An aspect of the present invention includes a method for patterning a workpiece covered at least partly with a layer sensitive to electromagnetic radiation, comprising the actions of, providing a data representation of at least one image to be imaged onto a plurality of locations of said workpiece, fracturing said data representation into a plurality of field stripes, repeating the actions of rasterizing a first field stripe of said data representation, modulating a modulator according to said rasterized field stripe, imaging said first field stripe onto a plurality of locations of said workpiece, rasterizing a second field stripe of said data representation while imaging said first field stripe onto said plurality of locations of said workpiece, terminating the repetition when a predetermined amount of said image is imaged onto said plurality of locations of said workpiece. Other aspects of the present invention are reflected in the detailed description, figures and claims.

Abstract: The present invention relates to a method and a system for predicting and correcting geometrical errors in lithography using masks, such as large-area photomasks or reticles, and exposure stations, such as wafer steppers or projection aligners, printing the pattern of said masks on a workpiece, such as a display panel or a semi-conductor wafer. The method according to the invention comprises the steps of collecting information about a mask substrate, a mask writer, an exposure stati n, and/or about behavior of a processing step that will occur after the writing of the mask. Further the method comprises predicting from the combined information distorsions occuring in the pattern, when it is subsequently printed on the workpiece; calculating from said prediction a correction to diminish said predicted distorsion, and exposing said pattern onto said mask substrate while applying said correction for said distorsions.

Abstract: A method and system for a high-speed datapath for a high-performance pattern generator such as an analog SLM for generating the image is disclosed. The data path has provisions for completely independent parallel data flows giving true scalability to arbitrarily high throughput. In an exemplary embodiment areas on the SLM are assigned to specific rasterizing and fracturing processors. There is an overlap between fields for blending of the edges in the pattern and for computation of interaction between features in the pattern. The datapath has data integrity checks and a recovery mode when an error condition is raised, allowing it to recover from most errors without creating new errors.

Abstract: A high-speed datapath for a high-performance pattern generator such as an analog SLM for generating the image is disclosed. The data path has provisions for completely independent parallel data flows giving true scalability to arbitrarily high throughput. In a preferred embodiment areas on the SLM are assigned to specific rasterizing and fracturing processors. There is an overlap between fields for blending of the edges in the pattern and for computation of interaction between features in the pattern. The datapath has data integrity checks and a recovery mode when an error condition is raised, allowing it to recover from most errors without creating new errors.

Abstract: A system and method are provided for microlithographic writing on photosensitive substrates, and especially high precision printing of patterns, such as photomasks, for semiconductor device patterns, display panels, integrated optical devices and electronic interconnect structures. The method includes the steps of detecting significant temporary writing error conditions and interrupting the writing process as a response to a detection of such an error condition. Thereafter a support table is reversed to the position it had when the writing was interrupted, and the writing process is restarted at the same position where the writing was interrupted when the error condition ceases to exist.

Abstract: A system for writing geometric structures on a photosensitive substrate including a modulated laser beam source, a focusing lens, a deflector for producing a scanning action between the light source and the lens, and a device for mechanically moving the surface relative to the laser beam. Compressed data for use in writing the geometric structures is read out of a memory into a data delivery circuit such that the data is formatted to have both beam power and position information. A modulator logic circuit operates to call up the data from the data delivery circuit, form a modulation drive signal based on the power information, and delay the modulation drive signal based the position data. The modulator logic circuit thus operates to vary the modulation drive signal to begin or end exposure along the scan lines with greater resolution or pixel density by at least a factor of four more than the resolution or spacing density between adjacent scan lines.