Patents by Inventor Andi ZHAO

Andi ZHAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210058076
    Abstract: A hybrid fin flip flop circuit may comprise a mixture of 1-fin transistors and multi-fin transistors. In one example, a flip flop circuit may comprise 1-fin transistors in at least one of the critical paths of the flip flop circuit such as the drive circuit, the input circuit, or the output circuit. In one example, a flip flop circuit may include: an input circuit; a clock driver circuit; an output circuit; and a latch circuit; wherein one of the input circuit, the clock driver circuit, or the output circuit comprises a multi-fin transistor and the latch circuit comprises a plurality of 1-fin transistors.
    Type: Application
    Filed: August 22, 2019
    Publication date: February 25, 2021
    Inventors: Andi ZHAO, Ramaprasath VILANGUDIPITCHAI, Hyeokjin LIM, Seung Hyuk KANG
  • Patent number: 10026735
    Abstract: A MOS IC includes pMOS transistors, each having a pMOS transistor drain, source, and gate. Each pMOS transistor gate extends in a first direction and is coupled to other pMOS transistor gates. Each pMOS transistor source/drain are coupled to a first voltage source. The MOS IC further includes a first metal interconnect extending over the pMOS transistors. The first metal interconnect has first and second ends. The first metal interconnect is coupled to each pMOS transistor gate and is coupled to a second voltage source less than the first voltage source. One of each pMOS transistor gate or the second voltage source is coupled to the first metal interconnect through at least one tap point located between the first and second ends. The pMOS transistors and the first metal interconnect function as a decoupling capacitor.
    Type: Grant
    Filed: November 23, 2016
    Date of Patent: July 17, 2018
    Assignee: QUALCOMM Incorporated
    Inventors: Andi Zhao, Ramaprasath Vilangudipitchai, Dorav Kumar
  • Publication number: 20180145071
    Abstract: A MOS IC includes pMOS transistors, each having a pMOS transistor drain, source, and gate. Each pMOS transistor gate extends in a first direction and is coupled to other pMOS transistor gates. Each pMOS transistor source/drain are coupled to a first voltage source. The MOS IC further includes a first metal interconnect extending over the pMOS transistors. The first metal interconnect has first and second ends. The first metal interconnect is coupled to each pMOS transistor gate and is coupled to a second voltage source less than the first voltage source. One of each pMOS transistor gate or the second voltage source is coupled to the first metal interconnect through at least one tap point located between the first and second ends. The pMOS transistors and the first metal interconnect function as a decoupling capacitor.
    Type: Application
    Filed: November 23, 2016
    Publication date: May 24, 2018
    Inventors: Andi ZHAO, Ramaprasath VILANGUDIPITCHAI, Dorav KUMAR