Abstract: A thin film gas sensor device includes a substrate, a nanostructured thin film layer, and a first and a second electrode. The nanostructured thin film layer is supported by the substrate and is formed with a semi-conductor material including holes. The semiconductor material is configured to undergo an increase in a density of the holes in the presence of a target gas, thereby decreasing an electrical resistance of the nanostructured thin film layer. The first and the second electrodes are supported by the substrate and are operably connected to the nanostructured thin film layer, such that the decrease in electrical resistance can be detected.

Abstract: A semiconductor sensor system, in particular a bolometer, includes a substrate, an electrode supported by the substrate, an absorber spaced apart from the substrate, a voltage source, and a current source. The electrode can include a mirror, or the system may include a mirror separate from the electrode. Radiation absorption efficiency of the absorber is based on a minimum gap distance between the absorber and mirror. The current source applies a DC current across the absorber structure to produce a signal indicative of radiation absorbed by the absorber structure. The voltage source powers the electrode to produce a modulated electrostatic field acting on the absorber to modulate the minimum gap distance. The electrostatic field includes a DC component to adjust the absorption efficiency, and an AC component that cyclically drives the absorber to negatively interfere with noise in the signal.

Abstract: A MEMS device includes a bolometer attached to a silicon wafer by a base portion of at least one anchor structure. The base portion comprises a layer stack having a metal-insulator-metal (MIM) configuration such that the base portion acts as a resistive switch such that, when the first DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state, and, when the second DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state.

Abstract: In accordance with one embodiment, a single chip combination inertial and pressure sensor device includes a substrate, an inertial sensor including a movable sensing structure movably supported above the substrate, and a first fixed electrode positioned adjacent to the movable sensing structure, and a pressure sensor including a gap formed in the sensor at a location directly above the movable sensing structure, and a flexible membrane formed in a cap layer of the device, the flexible membrane defining a boundary of the gap and configured to flex toward and away from the gap in response to a variation in pressure above the flexible membrane.

Abstract: A method for fabricating a semiconductor device includes patterning a sacrificial layer on a substrate to define a bolometer, with trenches being formed in the sacrificial layer to define anchors for the bolometer, the trenches extending through the sacrificial layer and exposing conductive elements at the bottom of the trenches. A thin titanium nitride layer is then deposited on the sacrificial layer and within the trenches. The titanium nitride layer is configured to form a structural support for the bolometer and to provide an electrical connection to the conductive elements on the substrate.

Abstract: A thin film gas sensor device includes a substrate, a first pillar, a second pillar, a nanostructured thin film layer, and a first and a second electrical contact. The first and second pillars are supported by the substrate. The nanostructured thin film layer is formed with a semi-conductor material including holes. The semiconductor material is configured to undergo a reduction in a density of the holes in the presence of a target gas, thereby increasing an electrical resistance of the nanostructured thin film layer. The first and the second electrical contacts are operably connected to the nanostructured thin film layer, such that the increase in electrical resistance can be detected.

Abstract: A semiconductor gas sensor device includes a substrate, a conductive layer supported by the substrate, a non-suitable seed layer, and a porous gas sensing layer portion. The non-suitable seed layer is formed from a first material and includes a first support portion supported by the conductive layer, a second support portion supported by the conductive layer, and a suspended seed portion extending from the first support portion to the second support portion and suspended above the conductive layer. The porous gas sensing layer portion is formed from a second material and is supported directly by the non-suitable seed layer in electrical communication with the conductive layer. The first material and the second material form a non-suitable pair of materials.

Abstract: A thin film gas sensor device includes a substrate, a nanostructured thin film layer, and a first and a second electrode. The nanostructured thin film layer is supported by the substrate and is formed with a semi-conductor material including holes. The semiconductor material is configured to undergo an increase in a density of the holes in the presence of a target gas, thereby decreasing an electrical resistance of the nanostructured thin film layer. The first and the second electrodes are supported by the substrate and are operably connected to the nanostructured thin film layer, such that the decrease in electrical resistance can be detected.

Abstract: A method of fabricating a MEMS device includes depositing an expandable material into a first recess of a cap wafer. The cap wafer includes a plurality of walls that surround and define the first recess and a second recess. The cap wafer is bonded to a MEMS wafer including a first MEMS device and a second MEMS device. The first MEMS device is encapsulated in the first recess, and the second MEMS device is encapsulated in the second recess. The expandable material is then heated to at least an activation temperature to cause the expandable material to expand after the first recess has been sealed. The expansion of the expandable material causes a reduction in volume of the first recess.

Abstract: A MEMS device includes a bolometer attached to a silicon wafer by a base portion of at least one anchor structure. The base portion comprises a layer stack having a metal-insulator-metal (MIM) configuration such that the base portion acts as a resistive switch such that, when the first DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state, and, when the second DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state.

Abstract: A micro gas chromatograph includes one or more separator columns formed within a device layer. The separator columns have small channel cross sections and long channel lengths with atomic-smooth channel sidewalls enabling a high channel packaging density, multiple channels positioned on top of each other, and channel segments that are thermally decoupled from the substrates. The micro gas-chromatograph also enables electrostatic and thermal actuators to be positioned in close proximity to the separator columns such that the material passing through the columns is one or more of locally heated, locally cooled, and electrically biased.

Abstract: A microelectromechanical sensor module includes a sensing mechanism for measuring an acceleration, pressure, air humidity or the like, a control mechanism for controlling the sensing mechanism, an energy supply mechanism for supplying the sensor module with energy, and a transmission mechanism for transmitting signals of the sensing mechanism. At least three of the mechanisms are integrated at the chip level in at least one chip in each case. A corresponding method is implemented to produce the microelectromechanical sensor module.

Abstract: A temperature sensing device includes a probe unit on a first end and a sensor unit on a second end opposite the first end. The first end is introduced into an environment to be measured, such as an exhaust gas line from a combustion engine, and the second end is positioned in a region outside of the environment such that the sensor unit is at least partially insulated from a temperature of the environment. The probe unit, exposed to the temperature of the environment, achieves a temperature that corresponds to the temperature of the environment. The sensor unit is operable to sense the temperature of the probe unit and generate a corresponding electrical signal usable to determine a sensed temperature of the environment. The temperature of the environment can be determined on a cycle-by-cycle basis, and is usable for implementing advanced combustion strategies such as HCCI and SACI.

Abstract: A semiconductor sensor system, in particular a bolometer, includes a substrate, an electrode supported by the substrate, an absorber spaced apart from the substrate, a voltage source, and a current source. The electrode can include a mirror, or the system may include a mirror separate from the electrode. Radiation absorption efficiency of the absorber is based on a minimum gap distance between the absorber and mirror. The current source applies a DC current across the absorber structure to produce a signal indicative of radiation absorbed by the absorber structure. The voltage source powers the electrode to produce a modulated electrostatic field acting on the absorber to modulate the minimum gap distance. The electrostatic field includes a DC component to adjust the absorption efficiency, and an AC component that cyclically drives the absorber to negatively interfere with noise in the signal.

Abstract: A micromechanical sensor device with a movable gate includes a field effect transistor having a drain region, a source region, a channel region arranged between the field effect transistor and the source region and including a first doping type, and a movable gate. The movable gate is separated from the channel region by an interspace. The drain region, the source region, and the channel region are arranged in a substrate. An oxide region is provided in the substrate at least at longitudinal sides of the channel region.

Abstract: A method of fabricating a semiconductor device comprises forming a dielectric layer above a substrate, the dielectric layer including a fixed dielectric portion and a proof mass portion, forming a source region and a drain region in the substrate, forming a gate electrode in the proof mass portion, and releasing the proof mass portion, such that the proof mass portion is movable with respect to the fixed dielectric portion and the gate electrode is movable with the proof mass portion relative to the source region and the drain region.

Abstract: A method of manufacturing a semiconductor device includes forming at least one sacrificial layer on a substrate during a complementary metal-oxide-semiconductor (CMOS) process. An absorber layer is deposited on top of the at least one sacrificial layer. A portion of the at least one sacrificial layer beneath the absorber layer is removed to form a gap over which a portion of the absorber layer is suspended. The sacrificial layer can be an oxide of the CMOS process with the oxide being removed to form the gap using a selective hydrofluoric acid vapor dry etch release process. The sacrificial layer can also be a polymer layer with the polymer layer being removed to form the gap using an O2 plasma etching process.

Abstract: A sensing assembly device includes a substrate, a chamber above the substrate, a first piezoelectric gyroscope sensor positioned within the chamber, and a first accelerometer positioned within the chamber.

Abstract: A semiconductor device includes a substrate, an insulating film provided on a surface of the substrate, and a sensing film formed of a conductive material deposited on top of the insulating film. The sensing film defines at least one conductive path between a first position and a second position on the insulating film. A first circuit connection is electrically connected to the sensing film at the first position on the insulating layer, and a second circuit connection is electrically connected to the sensing film at the second position. A control circuit is operatively connected to the first circuit connection and the second circuit connection for measuring an electrical resistance of the sensing film. The sensing film has a thickness that enables a resistivity of the sensing film to be altered predictably in a manner that is dependent on ambient moisture content.

Abstract: A system and method for forming a sensor device includes defining an in-plane electrode in a device layer of a silicon on insulator (SOI) wafer, forming an out-of-plane electrode in a silicon cap layer located above an upper surface of the device layer, depositing a silicide-forming metal on a top surface of the silicon cap layer, and annealing the deposited silicide-forming metal to form a silicide portion in the silicon cap layer.