Abstract: The invention relates to amorphous poly-alpha-olefins, which are characterized in that said amorphous poly-alpha-olefins have a viscosity at 190° C. of less than 5000 mPas, a molar mass distribution (Mw/Mn) of 3 to 8, a quotient Mz/Mw of less than or equal to 3.0 and a quotient Mz/Mn of less than 21.0. The invention further relates to a method for producing degraded amorphous poly-alpha-olefins, in particular the amorphous poly-alpha-olefins according to the invention, and to the use of the amorphous polyalpha-olefins according to the invention or produced according to the invention in hot-melt adhesive compositions.

Abstract: The present invention relates to fiber polymer composite comprising polypropylene fibers and a matrix material, the matrix material being in direct contact with at least some of the fibers, characterized in that the matrix material comprises 50% to 100% by weight based on the whole matrix material of an amorphous propylene-rich poly-alpha-olefin, to a process for producing the fiber polymer composite, and to the use of the fiber polymer composite.

Abstract: The invention relates to amorphous poly-alpha-olefins, which are characterized in that said amorphous poly-alpha-olefins have a viscosity at 190° C. of less than 5000 mPas, a molar mass distribution (Mw/Mn) of 3 to 8, a quotient Mz/Mw of less than or equal to 3.0 and a quotient Mz/Mn of less than 21.0. The invention further relates to a method for producing degraded amorphous poly-alpha-olefins, in particular the amorphous poly-alpha-olefins according to the invention, and to the use of the amorphous polyalpha-olefins according to the invention or produced according to the invention in hot-melt adhesive compositions.

Abstract: The present invention provides a porous semiconductive structure, characterized in that the structure has an electrical conductivity of 5·10?8 S·cm?1 to 10 S·cm?1, and an activation energy of the electrical conductivity of 0.1 to 700 meV, and a solid fraction of 30 to 60% by volume, and a pore size of 1 nm to 500 nm, the solid fraction having at least partly crystalline doped constituents which are bonded to one another via sinter necks and have sizes of 5 nm to 500 nm and a spherical and/or ellipsoidal shape, which comprise the elements silicon, germanium or an alloy of these elements, and also a process for producing a porous semiconductive structure, characterized in that A. doped semimetal particles are obtained, and then B. a dispersion is obtained from the semimetal particles obtained after step A, and then C. a substrate is coated with the dispersion obtained after step B, and then D. the layer obtained after step C is treated by means of a solution of hydrogen fluoride in water, and then E.