Patents by Inventor André TUCHSCHERER

André TUCHSCHERER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for the production of a substrate having a coating comprising copper, and coated substrate and device prepared by this method
    Patent number: 9005705
    Abstract: A method for producing a substrate with a copper or a copper-containing coating is disclosed. The method comprises a first step wherein a first precursor, a second precursor and a substrate are provided. The first precursor is a copper complex that contains no fluorine and the second precursor is selected from a ruthenium complex, a nickel complex, a palladium complex or mixtures thereof. In the second step, a layer is deposited at least on partial regions of a surface of the substrate by using the first precursor and the second precursor by means of atomic layer deposition (ALD). The molar ratio of the first precursor:second precursor used for the ALD extends from 90:10 to 99.99:0.01. The obtained layer contains copper and at least one of ruthenium, nickel and palladium. Finally, a reduction is performed step in which a reducing agent acts on the substrate obtained after depositing the copper-containing layer.
    Type: Grant
    Filed: September 14, 2011
    Date of Patent: April 14, 2015
    Assignees: Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung E.V., Technische Universitaet Chemnitz
    Inventors: Thomas Waechtler, Stefan Schulz, Thomas Gessner, Steve Mueller, André Tuchscherer, Heinrich Lang
  • METHOD FOR THE PRODUCTION OF A SUBSTRATE HAVING A COATING COMPRISING COPPER, AND COATED SUBSTRATE AND DEVICE PREPARED BY THIS METHOD
    Publication number: 20130062768
    Abstract: A method for producing a substrate with a copper or a copper-containing coating is disclosed. The method comprises a first step wherein a first precursor, a second precursor and a substrate are provided. The first precursor is a copper complex that contains no fluorine and the second precursor is selected from a ruthenium complex, a nickel complex, a palladium complex or mixtures thereof. In the second step, a layer is deposited at least on partial regions of a surface of the substrate by using the first precursor and the second precursor by means of atomic layer deposition (ALD). The molar ratio of the first precursor:second precursor used for the ALD extends from 90:10 to 99.99:0.01. The obtained layer contains copper and at least one of ruthenium, nickel and palladium. Finally, a reduction is performed step in which a reducing agent acts on the substrate obtained after depositing the copper-containing layer.
    Type: Application
    Filed: September 14, 2011
    Publication date: March 14, 2013
    Applicants: TECHNISCHE UNIVERSITAET CHEMNITZ, FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
    Inventors: Thomas WAECHTLER, Stefan SCHULZ, Thomas GESSNER, Steve MUELLER, André TUCHSCHERER, Heinrich LANG