Abstract: Examples described in this disclosure relate to gating a semiconductor layer into a quantum spin Hall insulator state, Certain examples further relate to using quantum spin Hall insulators as topological quantum qubits. Quantum spin Hall systems may rely upon the quantum spin Hall effect by causing a state of a matter to change from a certain phase to an inverted bandgap phase. In one example, the present disclosure relates to a device including a semiconductor layer comprising an active material. The device further includes a gate coupled to the semiconductor layer, where the semiconductor layer is operable in a quantum spin Hall insulator state by using electrons and holes from the active material in response to an application of an electric field to the semiconductor layer via the gate.

Abstract: The present invention is directed to a sialylated isolated antibody specific for an antigen selected from autoimmune antigens, allergens, MHC molecules or Rhesus factor D antigen, comprising an Fc-portion of IgG type, and exhibiting a sialic acid residue at the Fc-portion for use in treatment and/or prophylaxis of autoimmune disease, allergy, transplant rejection or Rhesus factor D reactivity and to methods of producing such an antibody.