Patents by Inventor Andras Kuthi
Andras Kuthi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8926789Abstract: An apparatus generating a plasma for removing fluorinated polymer from a substrate is provided. The apparatus includes a powered electrode assembly, which includes a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The apparatus also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated. The first wire mesh is shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the fluorinated polymer.Type: GrantFiled: March 30, 2010Date of Patent: January 6, 2015Assignee: Lam Research CorporationInventors: Hyungsuk Alexander Yoon, John Boyd, Andras Kuthi, Andrew D. Bailey, III
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Publication number: 20140230770Abstract: A transient plasma electrode apparatus may include an elongated electrode having a first and a second end. The first end may connect to a source of high voltage pulses. An insulation jacket may surround a portion of the electrode. An electric-field enhancing protrusion may be at the second end of the elongated electrode. The protrusion may cause an electric field when a high voltage is applied between the elongated electrode and a metallic wall of a combustion chamber in which the electrode is placed. The electric field may be greater at the second end as compared to along the length of the electrode.Type: ApplicationFiled: February 20, 2014Publication date: August 21, 2014Applicant: UNIVERSITY OF SOUTHERN CALIFORNIAInventors: Andras Kuthi, Martin A. Gundersen, Yung-Hsu Lin, Daniel R. Singleton
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Publication number: 20140230790Abstract: A device for providing ignition of a fuel-air mixture using a transient plasma discharge is provided. The device includes an anode coupled to receive a voltage; and a cathode disposed in proximity to the anode and coupled to a ground, wherein at least one of the anode and the cathode includes a protrusion that enhances an electric field formed between the anode and the cathode, the protrusion forming a sharp edge defining a plurality of points, each point forming a path of shortest distance between the anode and the cathode.Type: ApplicationFiled: February 20, 2014Publication date: August 21, 2014Applicant: UNIVERSITY OF SOUTHERN CALIFORNIAInventors: Daniel R. Singleton, Martin A. Gundersen, Jason M. Sanders, Andras Kuthi
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Publication number: 20140109886Abstract: A system and method for providing pulsed power to improve performance efficiency. In one approach, pulsed power is employed to improve fuel efficiency and power of an engine. The system and method can involve a transient plasma plug assembly intended to replace a traditional spark plug. Alternatively, an approach involving a pulse generator and a nanosecond, high voltage pulse carrying ignition cable is contemplated.Type: ApplicationFiled: October 11, 2013Publication date: April 24, 2014Applicant: Transient Plasma Systems, Inc.Inventors: Daniel Singleton, Jason Sanders, Martin Gundersen, Andras Kuthi
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Patent number: 8574397Abstract: A plasma processing chamber configured for cleaning a bevel edge of a substrate is provided. The chamber includes a top edge electrode surrounding an insulating plate, and the insulator plate opposes a bottom electrode. The top edge electrode is electrically grounded and separated from the insulator plate by a top dielectric ring. The chamber also includes a bottom edge electrode that is electrically grounded and surrounds the bottom electrode and is separated from the bottom electrode by a bottom dielectric ring. The bottom edge electrode is oriented to oppose the top edge electrode, and the bottom edge electrode has an L shape that is up-facing. Bevel edge plasma processing of a substrate edge is configured to be processed in a chamber having the top and bottom edge electrodes.Type: GrantFiled: July 12, 2012Date of Patent: November 5, 2013Assignee: Lam Research CorporationInventors: Gregory S. Sexton, Andrew D. Bailey, III, Andras Kuthi
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Patent number: 8454794Abstract: An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. The coil includes a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding connected in series with a capacitor.Type: GrantFiled: June 15, 2012Date of Patent: June 4, 2013Assignee: Lam Research CorporationInventors: Arthur M. Howald, Andras Kuthi
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Publication number: 20130050892Abstract: Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.Type: ApplicationFiled: October 29, 2012Publication date: February 28, 2013Inventors: Andras Kuthi, Stephen Hwang, James C. Vetter, Greg Eilenstine, Rongping Wang, Tuan Ngo
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Patent number: 8303763Abstract: Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.Type: GrantFiled: April 25, 2012Date of Patent: November 6, 2012Assignee: Lam Research CorporationInventors: Andras Kuthi, Stephen Hwang, James C. Vetter, Greg Eilenstine, Rongping Wang, Tuan Ngo
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Publication number: 20120273134Abstract: A plasma processing chamber configured for cleaning a bevel edge of a substrate is provided. The chamber includes a top edge electrode surrounding an insulating plate, and the insulator plate opposes a bottom electrode. The top edge electrode is electrically grounded and separated from the insulator plate by a top dielectric ring. The chamber also includes a bottom edge electrode that is electrically grounded and surrounds the bottom electrode and is separated from the bottom electrode by a bottom dielectric ring. The bottom edge electrode is oriented to oppose the top edge electrode, and the bottom edge electrode has an L shape that is up-facing. Bevel edge plasma processing of a substrate edge is configured to be processed in a chamber having the top and bottom edge electrodes.Type: ApplicationFiled: July 12, 2012Publication date: November 1, 2012Applicant: Lam Research CorporationInventors: Gregory S. Sexton, Andrew D. Bailey, III, Andras Kuthi
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Publication number: 20120248978Abstract: An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. The coil includes a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding connected in series with a capacitor.Type: ApplicationFiled: June 15, 2012Publication date: October 4, 2012Applicant: LAM RESEARCH CORPORATIONInventors: Arthur M. HOWALD, Andras KUTHI
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Patent number: 8277604Abstract: An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. The coil includes a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding connected in series with a capacitor.Type: GrantFiled: February 3, 2011Date of Patent: October 2, 2012Assignee: Lam Research CorporationInventors: Arthur M. Howald, Andras Kuthi
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Patent number: 8252140Abstract: The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In one example, a chamber for wafer bevel edge cleaning is provided. The chamber includes a bottom electrode having a bottom electrode surface for supporting the wafer when present. Also included is a top edge electrode surrounding an insulating plate. The insulator plate is opposing the bottom electrode. The top edge electrode is electrically grounded and has a down-facing L shape. Further included in the chamber is a bottom edge electrode that is electrically grounded and spaced apart from the bottom electrode. The bottom edge electrode is disposed to encircle the bottom electrode. The bottom edge electrode is oriented to oppose the down-facing L shape of the top edge electrode.Type: GrantFiled: April 12, 2011Date of Patent: August 28, 2012Assignee: Lam Research CorporationInventors: Gregory S. Sexton, Andrew D. Bailey, III, Andras Kuthi
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Publication number: 20120206127Abstract: Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.Type: ApplicationFiled: April 25, 2012Publication date: August 16, 2012Inventors: Andras Kuthi, Stephen Hwang, James C. Vetter, Greg Eilenstine, Rongping Wang, Tuan Ngo
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Patent number: 8192576Abstract: Apparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit.Type: GrantFiled: May 23, 2007Date of Patent: June 5, 2012Assignee: Lam Research CorporationInventors: Andras Kuthi, Stephen Hwang, James C. Vetter, Greg Eilenstine, Rongping Wang, Tuan Ngo
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Patent number: 8137501Abstract: An apparatus for removing material on a bevel of a wafer is provided. A wafer support with a diameter that is less than the diameter of the wafer, wherein the wafer support is on a first side of the wafer, and wherein an outer edge of the wafer extends beyond the wafer support around the wafer is provided. An RF power source is electrically connected to the wafer. A central cover is spaced apart from the wafer support. A first electrically conductive ring is on the first side of and spaced apart from the wafer. A second electrically conductive ring is spaced apart from the wafer. An electrically conductive liner surrounds the outer edge of the wafer. A switch is between the liner and ground, allowing the liner to be switched from being grounded to floating.Type: GrantFiled: February 8, 2007Date of Patent: March 20, 2012Assignee: Lam Research CorporationInventors: Yunsang Kim, Andrew Bailey, III, Greg Sexton, Keechan Kim, Andras Kuthi
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Patent number: 8120207Abstract: This invention relates to a pulse generator circuit for delivering a short high current pulse to a load. This pulse generator comprises a junction recovery diode, a switch, a first resonant circuit and a second resonant circuit. The diode may be configured to store charges in its depletion layer when there is a forward flow of a current and to rapidly switch open after the depletion layer is discharged by a reverse flow of a current. After the diode rapidly switch opens, the pulse generator may provide a reverse current to the load. This pulse generator may be configured to generate at least one pulse that is having a length of no more than 100 nanoseconds at the full-width-at-half-maximum and an amplitude of at least 1 kilovolt. Electrodes may be connected to the pulse generator to deliver one pulse or plurality of pulses to biological cells such as tumor cells.Type: GrantFiled: February 9, 2010Date of Patent: February 21, 2012Assignee: University of Southern CaliforniaInventors: Jason Sanders, Andras Kuthi, Martin A. Gundersen, William Henry Moore
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Patent number: 8115343Abstract: This invention relates to a pulse generator circuit for delivering a short high current pulse to a load. This pulse generator comprises a junction recovery diode, a switch, a first resonant circuit and a second resonant circuit. The diode may be configured to store charges in its depletion layer when there is a forward flow of a current and to rapidly switch open after the depletion layer is discharged by a reverse flow of a current. After the diode rapidly switch opens, the pulse generator may provide a reverse current to the load. This pulse generator may be configured to generate at least one pulse that is having a length of no more than 100 nanoseconds at the full-width-at-half-maximum and an amplitude of at least 1 kilovolt. Electrodes may be connected to the pulse generator to deliver one pulse or plurality of pulses to biological cells such as tumor cells.Type: GrantFiled: May 22, 2009Date of Patent: February 14, 2012Assignee: University of Southern CaliforniaInventors: Jason Sanders, Andras Kuthi, Martin A. Gundersen, William Henry Moore
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Publication number: 20110186227Abstract: The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In one example, a chamber for wafer bevel edge cleaning is provided. The chamber includes a bottom electrode having a bottom electrode surface for supporting the wafer when present. Also included is a top edge electrode surrounding an insulating plate. The insulator plate is opposing the bottom electrode. The top edge electrode is electrically grounded and has a down-facing L shape. Further included in the chamber is a bottom edge electrode that is electrically grounded and spaced apart from the bottom electrode. The bottom edge electrode is disposed to encircle the bottom electrode. The bottom edge electrode is oriented to oppose the down-facing L shape of the top edge electrode.Type: ApplicationFiled: April 12, 2011Publication date: August 4, 2011Applicant: Lam Research CorporationInventors: Gregory S. Sexton, Andrew D. Bailey, III, Andras Kuthi
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Publication number: 20110120653Abstract: An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. The coil includes a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding connected in series with a capacitor.Type: ApplicationFiled: February 3, 2011Publication date: May 26, 2011Applicant: LAM RESEARCH CORPORATIONInventors: Arthur M. HOWALD, Andras Kuthi
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Patent number: 7938931Abstract: The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a bottom electrode configured to receive the substrate, wherein the bottom electrode is coupled to a radio frequency (RF) power supply. The plasma processing chamber also includes a top edge electrode surrounding an insulating plate opposing the bottom electrode. The top edge electrode is electrically grounded. The plasma processing chamber further includes a bottom edge electrode surrounding the bottom electrode. The bottom edge electrode opposes the top edge electrode.Type: GrantFiled: June 5, 2007Date of Patent: May 10, 2011Assignee: Lam Research CorporationInventors: Gregory S. Sexton, Andrew D. Bailey, III, Andras Kuthi