Abstract: Active matrix display screen without intersections of the addressing row and column conductors.The display screen comprises a material with modifiable optical characteristics placed between a first wall and a second transparent wall. On the first wall is formed a matrix of elements, each comprising a switching element constituted by a thin film transistor and an electrode and on which there is also a group of row conductors. The other wall carries a group of column electrodes and a group of column conductors.Application to liquid crystal display screen.

Abstract: The invention relates to a point-by-point reading apparatus using a matrix of photodetector elements. The reading apparatus comprises a system of p groups of q basic elements, which are aligned, each of these basic elements being constituted by a photodiode and a diode insensitive to the light radiation and connected in opposition. These basic elements are addressed by an input circuit of the shift register type with p connections, each connected to all the diodes of the same group. The state of the photodiodes is collected in an output circuit with q connections, each connected to all the photodiodes occupying a particular rank in a group.

Abstract: The process consists in producing the grid (4) of the transistor on a glass substrate (2), depositing an insulating layer (6) on the substrate and grid, depositing a thick layer (8) of hydrogenated amorphous silicon on the insulating layer, depositing on the silicon layer a layer (10) of positive photosensitive resin sensitive to light of a wavelength greater than 550 nm, irradiating the resin layer through the substrate, the grid serving as a mask for the irradiation, developing the resin, etching the silicon layer until the insulating layer is bared, the remanent resin serving as a mask for the etching, depositing the layers permitting the making of the electrical contacts and the electrodes of the source and of the drain, eliminating the remanent resin (10a), and etching the electrodes of the source and of the drain.

Abstract: The present invention relates to a process for the amorphous growth of an element with crystallization under radiation.An element is deposited on a support contained in an enclosure under a vacuum in known manner and simultaneously one or more predetermined surfaces of the layer deposited on the support are irradiated, said irradiation being obtained by a coherent electromagnetic irradiation radiation beam having a power and wavelength suitable for desorbing said surfaces.

Abstract: The invention relates to a process and to an apparatus for treating semiconductor devices. A hydrogen plasma is created in the vicinity of the semiconductor devices and the positively polarized plasma particles are removed therefrom. A tightly sealed enclosure is provided and contains two plane, parallel electrodes polarized so as to form an anode and a cathode. Heating means are located in the vicinity of the anode.

Abstract: A basic photovoltaic stack is constituted by a semiconducting layer interposed between a layer forming an ohmic contact and a layer forming a Schottky contact. A second photovoltaic stack having the same structure as the basic stack is formed on this latter and includes one of the layers forming an ohmic or Schottky contact. The layer or layers forming an ohmic contact are connected together so as to constitute a first output terminal of the photovoltaic generator. The layer or layers forming a Schottky contact are connected together so as to constitute a second output terminal of the generator.