Abstract: A power module includes a substrate including an insulating member and a patterned metallization on the insulating member. The patterned metallization is segmented into a plurality of spaced apart metallization regions. Adjacent ones of the metallization regions are separated by a groove which extends through the patterned metallization to the insulating member. A first power transistor circuit includes a first power switch attached to a first one of the metallization regions and a second power switch attached to a second one of the metallization regions adjacent a first side of the first metallization region. A second power transistor circuit includes a third power switch attached to the first metallization region and a fourth power switch attached to a third one of the metallization regions adjacent a second side of the first metallization region which opposes the first side. The second power transistor circuit mirrors the first power transistor circuit.

Abstract: A power module includes a housing, a power semiconductor die enclosed within the housing and a first power terminal embedded in the housing and electrically connected to the power semiconductor die. A portion of the first power terminal protrudes outward from an external surface of the housing. The power module further includes a second power terminal embedded in the housing and electrically connected to the power semiconductor die and electrically insulated from the first power terminal. A portion of the second power terminal protrudes outward from the external surface of the housing by a distance less than the portion of the first power terminal so that the module has power connections with different heights.

Abstract: A power module includes a substrate including an insulating member and a patterned metallization on the insulating member. The patterned metallization is segmented into a plurality of spaced apart metallization regions. Adjacent ones of the metallization regions are separated by a groove which extends through the patterned metallization to the insulating member. A first power transistor circuit includes a first power switch attached to a first one of the metallization regions and a second power switch attached to a second one of the metallization regions adjacent a first side of the first metallization region. A second power transistor circuit includes a third power switch attached to the first metallization region and a fourth power switch attached to a third one of the metallization regions adjacent a second side of the first metallization region which opposes the first side. The second power transistor circuit mirrors the first power transistor circuit.

Abstract: A power module includes a housing, a power semiconductor die enclosed within the housing and a first power terminal embedded in the housing and electrically connected to the power semiconductor die. A portion of the first power terminal protrudes outward from an external surface of the housing. The power module further includes a second power terminal embedded in the housing and electrically connected to the power semiconductor die and electrically insulated from the first power terminal. A portion of the second power terminal protrudes outward from the external surface of the housing by a distance less than the portion of the first power terminal so that the module has power connections with different heights.

Abstract: A semiconductor device includes a semiconductor chip and a base plate coupled to the semiconductor chip. The base plate includes an upper portion and a lower portion. The upper portion has a bottom surface intersecting a sidewall of the lower portion. The semiconductor device includes a cooling element coupled to the base plate. The cooling element has a first surface directly contacting the bottom surface of the upper portion of the base plate, a second surface directly contacting the sidewall of the lower portion of the base plate, and a third surface parallel to the first surface and aligned with a bottom surface of the lower portion of the base plate.