Patents by Inventor Andre Grüssing

Andre Grüssing has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Use of a metal complex as an n-Dopant for an organic semiconducting matrix material, organic of semiconducting material and electronic component, and also a dopant and ligand and process for producing same
    Patent number: 8258501
    Abstract: A method of using a metal complex as an n-dopant for doping an organic semiconducting matrix material in order to alter the latter's electrical characteristics is provided. In order to provide n-doped organic semiconductors with matrix materials having a low reduction potential, while achieving high conductivities, the n-dopant is a neutral electron-rich metal complex with a neutral or charged transition metal atom as a central atom and having at least 16 valence electrons. The complex can be polynuclear and can possess at least one metal-metal bond. At least one ligand can form a ? complex with the central atom, which can be a bridge ligand, or it can contain at least one carbanion-carbon atom or a divalent atom. Methods for providing the novel n-dopants are provided.
    Type: Grant
    Filed: March 3, 2005
    Date of Patent: September 4, 2012
    Assignee: Novaled AG
    Inventors: Ansgar Werner, Olaf Kühl, Simon Gessler, Horst Hartmann, Andre Grüssing, Michael Limmert, Andrea Lux, Kentaro Harada
  • Use of a Metal Complex as an N-Dopant for an Organic Semiconducting Matrix Material, Organic of Semiconducting Material and Electronic Component, and also a Dopant and Ligand and Process for Producing same
    Publication number: 20090212280
    Abstract: A method of using a metal complex as an n-dopant for doping an organic semiconducting matrix material in order to alter the latter's electrical characteristics is provided. In order to provide n-doped organic semiconductors with matrix materials having a low reduction potential, while achieving high conductivities, the n-dopant is a neutral electron-rich metal complex with a neutral or charged transition metal atom as a central atom and having at least 16 valence electrons. The complex can be polynuclear and can possess at least one metal-metal bond. At least one ligand can form a ? complex with the central atom, which can be a bridge ligand, or it can contain at least one carbanion-carbon atom or a divalent atom. Methods for providing the novel n-dopants are provided.
    Type: Application
    Filed: March 3, 2005
    Publication date: August 27, 2009
    Inventors: Ansgar Werner, Olaf Kühl, Simon Gessler, Horst Hartmann, Andre Grüssing, Michael Limmert, Andrea Lux, Kentaro Harada