Abstract: The invention relates to high-frequency amplifier apparatuses suitable for generating power outputs of at least 1 kW at frequencies of at least 2 MHz. The apparatuses include two LDMOS transistors each connected by their source connection to ground. The transistors can have the same design and can be arranged in an assembly (package). The apparatus also includes a circuit board lying against a cooling plate, which can be connected to ground, and the assembly is arranged on or against the circuit board. The apparatuses have a power transformer, whose primary winding is connected to the drain connections of the transistors, and a signal transmitter. A secondary winding of the signal transmitter can be connected to the gate connections of the two transistors. Each of the gate connections can be connected to ground via at least one voltage-limiting structural element.

Abstract: The invention relates to high-frequency amplifier apparatuses suitable for generating power outputs of at least 1 kW at frequencies of at least 2 MHz. The apparatuses include two LDMOS transistors each connected by their source connection to ground. The transistors can have the same design and can be arranged in an assembly (package). The apparatus also includes a circuit board lying flat against a metallic cooling plate and connected to the cooling plate, which can be connected to ground, and the assembly is arranged on or against the circuit board. The apparatuses have a power transformer, whose primary winding is connected to the drain connections of the transistors, and a signal transmitter. A secondary winding of the signal transmitter is connected to the gate connections of the two transistors. Each of the gate connections is connected to ground via at least one voltage-limiting structural element.

Abstract: A non-linear high-frequency amplifier arrangement suitable for generating power outputs >1kW at frequencies of >1MHz for plasma excitation is provided. The arrangement includes two LDMOS transistors each connected by their source connection to aground connection point, where the LDMOS transistors have the same design and are arranged in an assembly, a power transformer whose primary winding is connected to drain connections of the LDMOS transistors, a signal transformer whose secondary winding is connected by a first end to a gate connection of one LDMOS transistor and by a second end to a gate connection of the other LDMOS transistor, and a feedback path from the drain connection to the gate connection of each of the LDMOS transistors.

Abstract: A non-linear high-frequency amplifier arrangement suitable for generating power outputs ?1 kW at frequencies of ?1 MHz for plasma excitation is provided. The arrangement includes two LDMOS transistors each connected by their source connection to aground connection point, where the LDMOS transistors have the same design and are arranged in an assembly, a power transformer whose primary winding is connected to drain connections of the LDMOS transistors, a signal transformer whose secondary winding is connected by a first end to a gate connection of one LDMOS transistor and by a second end to a gate connection of the other LDMOS transistor, and a feedback path from the drain connection to the gate connection of each of the LDMOS transistors.

Abstract: The invention relates to a device for generating a plurality of clock signals or high-frequency signals. The devices includes a reference signal generator, which is connected to an oscillator and generates at its output a reference signal with a reference frequency fx. The device also includes at least one signal processor, for example, a DDS, which is connected to the reference frequency generator via a first signal line and to which the reference signal with the reference frequency fx is supplied, and which is configured to generate an output signal having a frequency less than fx.

Abstract: A power combiner for coupling, splitting, or coupling and splitting high-frequency signals, the power combiner has a first input for a first high-frequency signal, a second input for a second high-frequency signal, an output, an equalizing connection, a first electrical conductor arranged between the first input and the output, wherein the first electrical conductor has a first total surface shaped primarily as a first planar surface electrode, a second electrical conductor arranged between the second input and the equalizing connection, wherein the second electrical conductor has a second total surface shaped primarily as a second planar surface electrode, and wherein the second electrical conductor is capacitively and inductively coupled to the first electrical conductor; and a cooling body, wherein more than 70% of the first total surface of the first electrical conductor is a same distance from the cooling body as the second total surface of the second electrical conductor.

Abstract: A power supply system comprises an amplifier stage that includes at least one transistor, for example an LDMOS transistor. The transistor is connected to a supply voltage via a power connection, and is controlled by a control voltage at the control connection of the transistor. In some implementations, a first controller is provided for adjusting the control voltage of the transistor, and a second controller is provided for adjusting the supply voltage. In some implementations, one of the controllers is designed to feed a state signal to the other controller, and the other controller is designed to evaluate the state signal.

Abstract: This disclosure relates to directional couplers and methods of tuning directional couplers formed in a printed circuit board. The directional couplers include a main line for transmitting power and at least one secondary line having a coupling portion arranged parallel and at a distance from the main line in a coupling region. The directional coupler includes one or more additional coupling lines that have a coupling portion that runs parallel to and at a distance from the coupling section of the at least one secondary line. The one or more additional coupling lines have a connection arranged on the outer portion of the printed circuit board for selective grounding or connection to an external connection.

Abstract: High-frequency amplifier apparatuses suitable for producing output powers of at least 1 kW at frequencies of at least 2 MHz for plasma excitation are disclosed. These high-frequency amplifiers include two transistors, the source or emitter connections of which are each connected to a ground connection point. The transistors can have an identical design and are arranged on a multilayer printed circuit board. The apparatus also includes a power transformer, the primary winding of which is connected to the drain or collector connections of the transistors. The primary winding and the secondary winding of the power transformer are each in the form of planar conductor tracks which are arranged in different upper layers of the multilayer printed circuit board.

Abstract: A power supply system includes a power converter configured to generate a high-frequency power signal and be connected to a load to supply a plasma process or gas laser process with power. The power converter includes at least one amplifier stage having first and second amplifier paths each having an amplifier. The first and second amplifier path are connected to a phase-shifting coupler unit that is configured to couple phase-shifted output signals from the first and second amplifier paths to form the high-frequency power signal. At least one amplifier of the first and second amplifier paths includes a field effect transistor implemented in a semiconductor device with a semiconductor structure having a substantially layered construction, and the semiconductor device includes a channel, a current flowing in the channel substantially in parallel with layers of the semiconductor structure.

Abstract: A power supply system includes a digital-to-analogue converter (DAC) configured to generate an analogue signal and an amplifier path on which the analogue signal is amplified to generate a high-frequency power signal to be provided to a plasma chamber for supplying a plasma process with high-frequency power. The DAC is configured to be connected to an arc detection device that is configured to monitor the plasma chamber for arcs and be controlled by the arc detection device to modify the analogue signal in response to detecting an occurrence of an arc.

Abstract: A power combiner in the form of a balanced LC combiner is provided. Inputs of the power combiner are isolated from one another via at least one RC matching element. The at least one RC matching element is dimensioned such that the connection between the inputs is at a stable potential during operation of the power combiner at at least one position. The power combiner can be formed in a planar design and have electrically conductive layers running parallel to one another. At least an inductor and a combiner capacitor are formed in the electrically conductive layers. A power combiner arrangement including the power combiner and high-frequency signal sources attached at least two inputs is also provided. The high-frequency signal sources can be in the form of frequency-agile transistor amplifiers.

Abstract: A power supply system includes a power converter configured to generate a high-frequency power signal and be connected to a load to supply a plasma process or gas laser process with power. The power converter includes at least one amplifier stage having first and second amplifier paths each having an amplifier. The first and second amplifier path are connected to a phase-shifting coupler unit that is configured to couple phase-shifted output signals from the first and second amplifier paths to form the high-frequency power signal. At least one amplifier of the first and second amplifier paths includes a field effect transistor implemented in a semiconductor device with a semiconductor structure having a substantially layered construction, and the semiconductor device includes a channel, a current flowing in the channel substantially in parallel with layers of the semiconductor structure.

Abstract: A power supply system includes a digital-to-analogue converter (DAC) configured to generate an analogue signal and an amplifier path on which the analogue signal is amplified to generate a high-frequency power signal to be provided to a plasma chamber for supplying a plasma process with high-frequency power. The DAC is configured to be connected to an arc detection device that is configured to monitor the plasma chamber for arcs and be controlled by the arc detection device to modify the analogue signal in response to detecting an occurrence of an arc.

Abstract: A power supply system includes a power converter configured to generate a high-frequency power signal and connected to a load to supply a plasma process or a gas laser process with power. The power converter has at least one amplifier path including at least one amplifier, an analog signal generated from a digital signal by a digital-analog converter (DAC) being supplied to the amplifier path, and a logic circuit unit configured to generate the digital signal and connected upstream of the DAC. The logic circuit unit has a signal data memory for storing signal data values for generating an analog signal form, an amplitude data memory for storing amplitude data values for influencing amplitudes of the analog signals, and a multiplier for multiplying the signal data values by the amplitude data values. The power converter includes an adjustable voltage supply for supplying the amplifier with a voltage.

Abstract: A power supply system includes a power converter configured to generate a high-frequency power signal and be connected to a load to supply a plasma process or gas laser process with power. The power converter includes at least one amplifier stage having first and second amplifier paths each having an amplifier. The first and second amplifier path are connected to a phase-shifting coupler unit that is configured to couple phase-shifted output signals from the first and second amplifier paths to form the high-frequency power signal. At least one amplifier of the first and second amplifier paths includes a field effect transistor implemented in a semiconductor device with a semiconductor structure having a substantially layered construction, and the semiconductor device includes a channel, a current flowing in the channel substantially in parallel with layers of the semiconductor structure.

Abstract: An arc extinguishing method for extinguishing arcs in a plasma chamber of a plasma system, comprising providing a plasma operating power during a plasma operation to the plasma chamber for generating plasma in the plasma chamber and carrying out a plasma-processing process using the generated plasma, by generating an analog signal by a digital-to-analog converter (DAC) and amplifying the generated analog signal on an amplifier path, monitoring, by an arc detection device, the plasma system for arcs, and in response to detecting an occurrence of an arc, controlling the DAC by the arc detection device such that the generated analog signal by the DAC is modified.

Abstract: A non-linear high-frequency amplifier arrangement suitable for generating power outputs ?1 kW at frequencies of ?1 MHz for plasma excitation is provided. The arrangement includes two LDMOS transistors each connected by their source connection to aground connection point, where the LDMOS transistors have the same design and are arranged in an assembly, a power transformer whose primary winding is connected to drain connections of the LDMOS transistors, a signal transformer whose secondary winding is connected by a first end to a gate connection of one LDMOS transistor and by a second end to a gate connection of the other LDMOS transistor, and a feedback path from the drain connection to the gate connection of each of the LDMOS transistors.

Abstract: A power supply system comprises an amplifier stage that includes at least one transistor, for example an LDMOS transistor. The transistor is connected to a supply voltage via a power connection, and is controlled by a control voltage at the control connection of the transistor. In some implementations, a first controller is provided for adjusting the control voltage of the transistor, and a second controller is provided for adjusting the supply voltage. In some implementations, one of the controllers is designed to feed a state signal to the other controller, and the other controller is designed to evaluate the state signal.

Abstract: Methods and devices for sampling a composite signal relating to a plasma process are provided. The composite signal has at least one plasma signal of interest and superimposed by at least one interfering signal. The methods include identifying the at least one interfering signal, digitalizing the composite signal by sampling the composite signal at a sampling frequency, and varying the sampling frequency during an operation of the plasma process according to at least one of a frequency of the at least one plasma signal of interest and a frequency of the at least one interfering signal.