Abstract: The invention is directed to a method of manufacturing an area of a first type of conductivity extending a depth into a semiconductor substrate and having a doping gradient as a function of the depth into the semiconductor substrate. The method comprises acts of providing a semiconductor substrate of the first type of conductivity; implanting nitrogen in an upper surface of the semiconductor substrate, with a dose in a range of between approximately 5.1013 and 5.1015 at./cm2, annealing the semiconductor substrate; and growing an epitaxial layer on the substrate of the first type of conductivity having a doping level lower than the semiconductor substrate.

Abstract: In order to increase the implantation energy of an ion implanter of the medium-current type, a microwave generator, having a traveling-wave tube generating an electromagnetic field with a frequency greater than or equal to 6 GHz, is arranged in the implanter; the initial ion source of the implanter is replaced by an electron cyclotron resonance multiply-charged ion source (3) including a waveguide-forming plasma cavity (21) whose characteristic dimension (D), in the transverse plane of the cavity, is of the same order of magnitude as the wavelength of the electromagnetic field; the microwave generator (60) and the plasma cavity (21) of the multiply-charged ion source are electromagnetically coupled; a complex gaseous medium, compatible with the beam of ions desired, is admitted into the plasma cavity and the inlet flow rate of the gaseous medium is adjusted so as to maintain a residual vacuum in the plasma cavity which is less than a pressure threshold compatible with the production of multiply-charged ions;