Patents by Inventor Andre Grussing

Andre Grussing has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8258501
    Abstract: A method of using a metal complex as an n-dopant for doping an organic semiconducting matrix material in order to alter the latter's electrical characteristics is provided. In order to provide n-doped organic semiconductors with matrix materials having a low reduction potential, while achieving high conductivities, the n-dopant is a neutral electron-rich metal complex with a neutral or charged transition metal atom as a central atom and having at least 16 valence electrons. The complex can be polynuclear and can possess at least one metal-metal bond. At least one ligand can form a ? complex with the central atom, which can be a bridge ligand, or it can contain at least one carbanion-carbon atom or a divalent atom. Methods for providing the novel n-dopants are provided.
    Type: Grant
    Filed: March 3, 2005
    Date of Patent: September 4, 2012
    Assignee: Novaled AG
    Inventors: Ansgar Werner, Olaf Kühl, Simon Gessler, Horst Hartmann, Andre Grüssing, Michael Limmert, Andrea Lux, Kentaro Harada
  • Publication number: 20110108772
    Abstract: The present invention relates to the use of heterocyclic radicals or diradicals, their dimers, oligomers, polymers, dispiro compounds and polycycles for use as dopant for doping an organic semiconductive matrix material, where the dopants have a structure based on the following formulae.
    Type: Application
    Filed: March 16, 2007
    Publication date: May 12, 2011
    Applicant: NOVALED AG
    Inventors: Olaf Zeika, Andrea Lux, Andre Grussing, Michael Limmert, Horst Hartmann, Ansgar Werner
  • Publication number: 20100233844
    Abstract: The present invention relates to a method for preparing doped organic semiconductor materials
    Type: Application
    Filed: March 21, 2007
    Publication date: September 16, 2010
    Applicant: Novaled AG
    Inventors: Olaf Zeika, Andrea Lux, Andre Grussing, Michael Limmert, Horst Hartmann, Ansgar Werner, Martin Ammann
  • Publication number: 20100234608
    Abstract: The present invention relates to the use of bora-tetraazapentalenes with the general formula A as redox-dopant and/or emitter in electronic, optoelectronic or electroluminescent structural elements.
    Type: Application
    Filed: March 30, 2007
    Publication date: September 16, 2010
    Applicant: NOVALED AG
    Inventors: Andre Grussing, Horst Hartmann
  • Publication number: 20090212280
    Abstract: A method of using a metal complex as an n-dopant for doping an organic semiconducting matrix material in order to alter the latter's electrical characteristics is provided. In order to provide n-doped organic semiconductors with matrix materials having a low reduction potential, while achieving high conductivities, the n-dopant is a neutral electron-rich metal complex with a neutral or charged transition metal atom as a central atom and having at least 16 valence electrons. The complex can be polynuclear and can possess at least one metal-metal bond. At least one ligand can form a ? complex with the central atom, which can be a bridge ligand, or it can contain at least one carbanion-carbon atom or a divalent atom. Methods for providing the novel n-dopants are provided.
    Type: Application
    Filed: March 3, 2005
    Publication date: August 27, 2009
    Inventors: Ansgar Werner, Olaf Kühl, Simon Gessler, Horst Hartmann, Andre Grüssing, Michael Limmert, Andrea Lux, Kentaro Harada