Abstract: A semiconductor protective structure suitable for electrostatic discharge with a field-effect transistor, whose source forms an emitter, whose body forms a base, and whose drain forms a collector of a bipolar transistor. A plurality of drain regions are formed within a body region of the field-effect transistor, and the drain regions are connected to one another by a conductor.

Abstract: An integrated circuit is disclosed that includes a component region with at least one NDMOS transistor and at least one PDMOS transistor and a substrate, which is isolated from the component region by a dielectric, whereby the component region, dielectric, and substrate form a first substrate capacitance standardized to a unit area in a first region of the PDMOS transistor and a second substrate capacitance standardized to said unit area in a second region of the NDMOS transistor, and whereby the first substrate capacitance standardized to said unit area is reduced in comparison to the second substrate capacitance standardized to said unit area.