Abstract: By directly using relative biases, contained in the relative bias date matrix, and by appropriately weighting the components thereof, sampling rate limitations in an APC control scheme may be efficiently compensated for. In particular embodiments, an age-based weighting factor is established that scales measurement data uncertainty according to the delay with which the corresponding measurement data for a specific control thread are obtained.

Abstract: Methods and systems are disclosed that allow an adjustment of a product parameter, such as operating speed, of a circuit element, such as a field effect transistor, during the fabrication of the device. A manufacturing process downstream of a first controlled process is controlled by a superior control scheme in response to the measurement data of the first and second processes and on the basis of a sensitivity function, which describes the effect a variation of the product parameter generates in the measurement data. The superior control scheme may provide a compensated target value for the downstream process.

Abstract: By directly using relative biases, contained in the relative bias date matrix, and by appropriately weighting the components thereof, sampling rate limitations in an APC control scheme may be efficiently compensated for. In particular embodiments, an age-based weighting factor is established that scales measurement data uncertainty according to the delay with which the corresponding measurement data for a specific control thread are obtained.

Abstract: In an improved technique for adjusting an etch time of a resist trim process, additional measurement data representing an optical characteristic, such as the reflectivity of an anti-reflective coating, is used. Since the initial thickness of the resist mask features may significantly depend on the optical characteristics of the anti-reflective coating, the additional measurement data allow compensation for process variations more efficiently as compared to the conventional approach.

Abstract: Methods and systems are disclosed that allow an adjustment of a product parameter, such as operating speed, of a circuit element, such as a field effect transistor, during the fabrication of the device. A manufacturing process downstream of a first controlled process is controlled by a superior control scheme in response to the measurement data of the first and second processes and on the basis of a sensitivity function, which describes the effect a variation of the product parameter generates in the measurement data. The superior control scheme may provide a compensated target value for the downstream process.

Abstract: In a method and in a controller for an advanced process control one or more currently valid process states are stored and are compared, upon the occurrence of a reset event, with a subsequent valid process state that has been established after the re-initialization of the process controller. Upon comparison of the previously established process state, including the associated history information to the process state established after occurrence of the reset event on the basis of the newly gathered history information, it is decided whether or not a reset of the process controller has been necessary. If it is assessed that a reset has not been necessary, process control is continued on the basis of the previously established process state and possibly the presently valid process state and the relevant history information.

Abstract: In an improved technique for adjusting an etch time of a resist trim process, additional measurement data representing an optical characteristic, such as the reflectivity of an anti-reflective coating, is used. Since the initial thickness of the resist mask features may significantly depend on the optical characteristics of the anti-reflective coating, the additional measurement data allow compensation for process variations more efficiently as compared to the conventional approach.

Abstract: Methods and systems are disclosed that allow an adjustment of an electrical property of a field effect transistor during the fabrication of the device. A manufacturing process downstream of the gate electrode formation step is controlled in response to the measured gate length such that a deviation of the measured gate length is, at least partially, compensated by a subsequent process step in order to maintain the electrical property of the completed field effect transistor within specified tolerances. In one illustrative embodiment, the effective gate length that is defined as the lateral distance of lightly doped regions is controlled so as to substantially maintain it. Moreover, a controller is disclosed that allows the manufacturing of a field effect transistor on a run-to-run basis by which variations of the gate length are at least partially compensated.

Abstract: In a method and in a controller for an advanced process control one or more currently valid process states are stored and are compared, upon the occurrence of a reset event, with a subsequent valid process state that has been established after the re-initialization of the process controller. Upon comparison of the previously established process state, including the associated history information to the process state established after occurrence of the reset event on the basis of the newly gathered history information, it is decided whether or not a reset of the process controller has been necessary. If it is assessed that a reset has not been necessary, process control is continued on the basis of the previously established process state and possibly the presently valid process state and the relevant history information.

Abstract: Methods and systems are disclosed that allow an adjustment of an electrical property of a field effect transistor during the fabrication of the device. A manufacturing process downstream of the gate electrode formation step is controlled in response to the measured gate length such that a deviation of the measured gate length is, at least partially, compensated by a subsequent process step in order to maintain the electrical property of the completed field effect transistor within specified tolerances. In one illustrative embodiment, the effective gate length that is defined as the lateral distance of lightly doped regions is controlled so as to substantially maintain it. Moreover, a controller is disclosed that allows the manufacturing of a field effect transistor on a run-to-run basis by which variations of the gate length are at least partially compensated.