Abstract: A semiconductor device includes: a semiconductor body; an electrical device formed in an active region of the semiconductor body, the active region including an interface between the semiconductor body and an insulating material; and a sensor having a bandwidth tuned to at least part of an energy spectrum of light emitted by carrier recombination at the interface when the electrical device is driven between accumulation and inversion, wherein an intensity of the emitted light is proportional to a density of charge trapping states at the interface, wherein the sensor is configured to output a signal that is proportional to the intensity of the sensed light. Corresponding methods of monitoring and characterizing the semiconductor device and a test apparatus are also described.

Abstract: A semiconductor device includes a semiconductor body comprising a first surface and an edge surface, a contact electrode formed on the first surface and comprising an outer edge side, and a passivation layer section conformally covering the outer edge side of the contact electrode. The passivation layer section is a multi-layer stack comprising a first layer, a second layer, and a third layer. Each of the first, second and third layers include outer edge sides facing the edge surface and opposite facing inner edge sides. The outer edge side of the contact electrode is disposed laterally between the inner edge sides and the outer edge sides of each layer.

Abstract: A semiconductor device includes: a semiconductor body; an electrical device formed in an active region of the semiconductor body, the active region including an interface between the semiconductor body and an insulating material; and a sensor having a bandwidth tuned to at least part of an energy spectrum of light emitted by carrier recombination at the interface when the electrical device is driven between accumulation and inversion, wherein an intensity of the emitted light is proportional to a density of charge trapping states at the interface, wherein the sensor is configured to output a signal that is proportional to the intensity of the sensed light. Corresponding methods of monitoring and characterizing the semiconductor device and a test apparatus are also described.

Abstract: A semiconductor device includes a semiconductor body comprising a first surface and an edge surface, a contact electrode formed on the first surface and comprising an outer edge side, and a passivation layer section conformally covering the outer edge side of the contact electrode. The passivation layer section is a multi-layer stack comprising a first layer, a second layer, and a third layer. Each of the first, second and third layers include outer edge sides facing the edge surface and opposite facing inner edge sides. The outer edge side of the contact electrode is disposed laterally between the inner edge sides and the outer edge sides of each layer.

Abstract: A semiconductor device includes a semiconductor body comprising a first surface and an edge surface, a contact electrode formed on the first surface and comprising an outer edge side, and a passivation layer section conformally covering the outer edge side of the contact electrode. The passivation layer section is a multi-layer stack comprising a first layer, a second layer, and a third layer. Each of the first, second and third layers comprise outer edge sides facing the edge surface and opposite facing inner edge sides. The outer edge side of the contact electrode is disposed laterally between the inner edge sides and the outer edge sides of each layer. The inner and outer edge sides of the third layer are closer to the outer edge side of the electrode than the respective inner and outer edge sides of the first and second layer.

Abstract: A semiconductor device includes a semiconductor body comprising a first surface and an edge surface, a contact electrode formed on the first surface and comprising an outer edge side, and a passivation layer section conformally covering the outer edge side of the contact electrode. The passivation layer section is a multi-layer stack comprising a first layer, a second layer, and a third layer. Each of the first, second and third layers comprise outer edge sides facing the edge surface and opposite facing inner edge sides. The outer edge side of the contact electrode is disposed laterally between the inner edge sides and the outer edge sides of each layer. The inner and outer edge sides of the third layer are closer to the outer edge side of the electrode than the respective inner and outer edge sides of the first and second layer.

Abstract: A semiconductor device includes a semiconductor body having a first surface, a contact electrode on the first surface, and a passivation layer on the first surface adjacent the contact electrode and partially overlapping the contact electrode. The passivation layer comprises a layer stack with a first layer comprising an oxide on the first surface, and a second layer comprising a nitride on the first layer.