Abstract: Inorganic precursors, namely iodosilane precursors, for the low temperature, low pressure deposition of silicon-containing films is provided therein. In one aspect, there is provided a process for forming a silicon-containing film process comprising: introducing a substrate and gaseous reagents comprising an iodosilane precursor having three or less iodine atoms bound to the silicon atom and at least one reagent selected from an oxygen-containing reactive gas, a nitrogen-containing reactive gas, a hydrogen-containing reactive gas and mixtures thereof into a reaction chamber; heating the reaction chamber to one or more temperatures ranging from 200° C. to 900° C. to form the silicon containing film on the substrate, provided that if the iodosilane precursor has three iodine atoms bound to the silicon atom then the heating step is conducted at one or more pressures less than 600 Torr.

Abstract: A process for the use of organic chlorides having the general formula C.sub.x H.sub.y Cl.sub.y, C.sub.z Cl.sub.s, C.sub.r O.sub.u Cl.sub.2(r-u+1), C.sub.r O.sub.u Cl.sub.r-u+1 H.sub.r-u+1, wherein x=1-10, more preferably 1-6; y=x+1, x or x-1; z=1-10, more preferably 1-6; s=2(x+1, x or x-1), r=1-10, more preferably 2-4; u=1, 2 and up to r, as precursors for decomposition to chlorine and oxygen-containing reactive reagents for subsequent use for vapor cleaning of silicon, thermal oxidation of silicon in a range of 200.degree. C.-1200.degree. C., rapid thermal oxidation of silicon and silicon polishing or etching.

Abstract: A method of depositing tungsten films comprising heating a substrate to a temperature above 200.degree. C. in a chemical vapor deposition reactor, flowing a stream of carrier gas over the substrate in the reactor, and simultaneously introducing mixtures of WF.sub.6 and organohydrosilanes into the reactor.

Abstract: A process for thermal oxidation of silicon or cleaning of furnace tubes used in semiconductor manufacturing by exposing the silicon or tube to temperatures above 700.degree. C. while flowing a carrier gas containing oxygen and a chlorohydrocarbon having a general formula C.sub.x H.sub.x Cl.sub.x where x is 2, 3, or 4 over the silicon or tube. The chlorohydrocarbon is selected to readily and completely oxidize at temperature.

Abstract: A process for thermal oxidation of silicon or cleaning of furnace tubes used in semiconductor manufacturing by exposing the silicon or tube to temperatures above 700.degree. C. while flowing a carrier gas containing oxygen and a chlorohydrocarbon having a general formula C.sub.x H.sub.x Cl.sub.x where x is 2, 3, or 4 over the silicon or tube. The chlorohydrocarbon is selected to readily and completely oxidize at temperature.

Abstract: The manufacture of semiconductor devices and, specifically, deposition of SiO.sub.2 films on semiconductor devices by oxidative decomposition of oligo siloxanes at low temperature is disclosed.

Abstract: Metal tetrafluoroborates, alkali and alkaline earth tetrafluoroborates in particular, and preferably lithium tetrafluoroborate are used as ion source materials in ion implantation of semiconductor materials with boron.

Abstract: Metal tetrafluoroborates, alkali and alkaline earth tetrafluoroborates in particular, and preferably lithium tetrafluoroborate are used as ion source materials in ion implantation of semiconductor materials with boron.

Abstract: The gas inlet tube and the outlet tube in the upper end of a "bubbler" container are each sealed with an easily breakable wall adjacent the wall where the tubes join the container. A second seal is formed on the outer ends of the tubes creating a compartment in which may be positioned a small hammer. The outer seals are sufficient to meet safety regulations regarding the shipment of highly corrosive or poisonous materials. The user of the material, breaks the outer seals, positions the hammer if not already in place, makes the desired connections to the tubes, applies a purging gas to the upper ends of the tubes, and breaks the inner seals by magnetically or otherwise actuating the hammer resting on the inner seal, thereby connecting the material to the desired system without exposing the material to the atmosphere.

Abstract: The gas inlet tube and the outlet tube in the upper end of a "bubbler" container are each sealed with an easily breakable wall adjacent the wall where the tubes join the container. A second seal is formed on the outer ends of the tubes creating a compartment in which may be positioned a small hammer. The outer seals are sufficient to meet safety regulations regarding the shipment of highly corrosive or poisonous materials. The user of the material, breaks the outer seals, positions the hammer if not already in place, makes the desired connections to the tubes, applies a purging gas to the upper ends of the tubes, and breaks the inner seals by magnetically or otherwise actuating the hammer resting on the inner seal, thereby connecting the material to the desired system without exposing the material to the atmosphere.