Abstract: The invention relates to a method of forming a layer of silicon carbide on a silicone wafer. The method includes the following steps: depositing an anti-carburation mask on the wafer using an essentially-check pattern; performing a carburation step under conditions such that the residual stress takes the form of extension and compression respectively; removing the mask; and form of extension and compression respectively; removing the mask; and performing a carburation step under conditions such that the residual stress takes form of compression and extension respectively.

Abstract: The invention relates to a method of forming a layer of silicon carbide (3, 4) on a silicone wafer (1) The invention is characterized in that it comprises the following steps consisting in: depositing an anti-carburation mask (2) on the wafer using an essentially-check pattern; performing a carburation step under conditions such that the residual stress takes the form of extension and compression respectively; removing the mask; and performing a carburation step under conditions such that the residual stress takes the form of compression and extension respectively.

Abstract: The invention relates to an intermediate product in the production of optical, electronic or opto-electronic components, comprising a crystalline layer of cubic silicon carbide, or of a nitride of an element of group III, such as AlN, InN or GaN on a monocrystalline substrate. The substrate is made from silicon/germanium, the germanium being of an atomic proportion of from 5 to 90% inclusive.

Abstract: The invention relates to a high-temperature heater device (1) including at least one heater element (2), and current leads (20, 21) for powering the heater element(s) (2), said device being characterized in that it operates in any position, and in that each of the heater elements comprises at least one thin graphite strip (2) connected at its ends to the current leads by means of refractory conductive connection elements (3) made of molybdenum.

Abstract: The process for chemical vapor deposition of layers of material on a substrate which extend generally in a plane is disclosed. The process for depositing thin film materials on the substrate is made more economical by virtue of a better energy balance than previously disclosed. The substrate is heated by radiation from the heat of a duct but also by the gases passing over the substrate which themselves are heated by the duct. The heating of the gases further improves the coupling between the heating means and the substrate.

Abstract: The invention concerns a method for epitaxial growth of a material on a first solid material from a material melting on the material, characterized in that it comprises: a step of growth of the first material on the substrate, made of a second material; a step whereby crystalline tips of the first material are made to grow from the contact surface between the first material and the melting material; a step which consists in causing crystals to grow laterally from the crystalline tips in a plane parallel to that of the free surface of the melting material.