Abstract: The invention relates to a method of forming a layer of silicon carbide (3, 4) on a silicone wafer (1) The invention is characterized in that it comprises the following steps consisting in: depositing an anti-carburation mask (2) on the wafer using an essentially-check pattern; performing a carburation step under conditions such that the residual stress takes the form of extension and compression respectively; removing the mask; and performing a carburation step under conditions such that the residual stress takes the form of compression and extension respectively.

Abstract: The invention relates to an intermediate product in the production of optical, electronic or opto-electronic components, comprising a crystalline layer of cubic silicon carbide, or of a nitride of an element of group III, such as AlN, InN or GaN on a monocrystalline substrate. The substrate is made from silicon/germanium, the germanium being of an atomic proportion of from 5 to 90% inclusive.

Abstract: The invention relates to a high-temperature heater device (1) including at least one heater element (2), and current leads (20, 21) for powering the heater element(s) (2), said device being characterized in that it operates in any position, and in that each of the heater elements comprises at least one thin graphite strip (2) connected at its ends to the current leads by means of refractory conductive connection elements (3) made of molybdenum.