Abstract: The present invention is a rotor (1) for an electrical machine featuring magnetic poles with asymmetric flux barriers (9, 10, 11). Additionally, lateral magnets (20) are provided in at least one flux barrier (9, 10, 11) of each pole.

Abstract: Methods of forming a field effect transistor by forming a gate electrode on a semiconductor substrate and forming aluminum oxide spacers on sidewalls of the gate electrode. Source and drain region dopants of first conductivity type are implanted into the semiconductor substrate using the aluminum oxide spacers as an implant mask. Thereafter, the aluminum oxide spacers are selectively removed by exposing them to tetramethyl ammonium hydroxide (TMAH). The step of selectively removing the aluminum oxide spacers may include exposing the aluminum oxide spacers to tetramethyl ammonium hydroxide having a temperature of about 80° C. After the aluminum oxide spacers have been selectively removed, a step may be performed to expose the gate electrode to a diluted hydrogen fluoride (DHF) cleaning solution.