Abstract: Light-emitting devices, and more particularly, LED chips that have pillars or pillar-like structures for plugged substrates are disclosed. Pillars can be formed of metal that plug into hollow vias of a substrate, enabling the LED chip to have electrical contact with a submount on which the substrate is mounted. The pillars can facilitate easier mounting of the LED chips to the submount in a surface mount device (SMD) context. The pillars can also serve as alignment pins to improve the die attach process. The substrate can include back-side metal contacts to facilitate the electrical contact between the pillars and the submount. In other embodiments, the hollow vias can extend all the way through the substrate allowing the pillars to make direct electrical contact with the submount.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly microparticle arrangements in LED packages are disclosed. Microparticles and corresponding microparticle layers are structured to internally recirculate light received from an LED chip and/or a recipient lumiphoric material layer to promote increased color mixing and color over angle uniformity. Microparticles are structured with particle sizes that exceed wavelengths of light provided by LED chips and/or lumiphoric materials to elicit internal recirculating of light. Arrangements and/or particle sizes of microparticles are disclosed that tailor light recycling and color mixing to various applications with targeted emission patterns. Related methods include forming microparticles and corresponding microparticle layers before encapsulants of LED packages.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly identification markers for LED packages and related methods are disclosed. Identification markers may include materials incorporated within LED packages that are transparent in a visible spectrum but detectable when illuminated with light outside the visible spectrum. When radiated with light outside the visible spectrum, identification markers may provide light in the visible spectrum. Alternatively, identification markers may provide light outside the visible spectrum that is detectable with equipment capable of detecting nonvisible light. Identification markers are generally configured to not be readily visible under inspection as a way to make LED packages more difficult for copying in counterfeit products.

Abstract: Light-emitting diode (LED) devices and more particularly LED chips with optically pumped quantum well structures are disclosed. LED chips include electrically pumped quantum well structures positioned proximate p-n junctions, and optically pumped quantum well structures positioned to receive photons of light generated by the electrically pumped quantum well structures and re-emit light having longer peak wavelengths. Aggregate emissions may include broader emission spectrums. Moreover, aggregate emissions may predominately be provided by light from the electrically pumped quantum well structures while light from the optically pumped quantum well structures may provide wavelengths that appear brighter to the human eye to increase luminous flux.

Abstract: Light-emitting diode (LED) devices and more particularly lens structures in multiple-chip LED packages are disclosed. Lens structures include separate lenses positioned to reduce optical decoupling from corresponding LED chips. Individual lenses for each individual LED chip provide flexibility in tailoring each lens to provide a portion of aggregate emissions with a targeted profile. Multiple lenses may be integrally formed from a common encapsulant material. Other lens structures include separate lenses provided on or through encapsulant materials. Combinations of different LED chip structures and different lens structures within a common LED package are disclosed.

Abstract: A light emitting device comprises a light emitting diode (LED) chip having a dominant wavelength in a range from about 390 nm to about 560 nm, an encapsulant in optical communication with the LED chip, and coated phosphor particles dispersed in the encapsulant. Each of the coated phosphor particles comprises (a) a luminescent particle having a first refractive index at the dominant wavelength, and (b) an optical coating on the luminescent particle, where the optical coating has a second refractive index at the dominant wavelength. The second refractive index is between the first refractive index and a refractive index of the encapsulant at the dominant wavelength.

Abstract: Methods and related systems for transfer of semiconductor die and more particularly for mass transfer of semiconductor die, such as light-emitting diodes, using transfer elements are disclosed. Certain aspects relate to methods of continuous mass transfer using roller feed loops. Two carrier bars move in opposite directions, one with die and one with a substrate. The die stick to a roller and transfer from a die carrier to the substrate on a substrate carrier. In certain aspects, transfer elements may include rollers, flexible rollers, or expandable rollers. Transfer elements may further include alignment features, such as alignment pockets, that provide enhanced die alignment. In certain aspects, transfer elements may include one or more planar surfaces that rotate positions relative to the die carrier and the substrate carrier.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly landing pad structures in LED chips and related methods are disclosed. Landing pad structures include landing pads for contacts positioned outside active LED structures of LED chips. Landing pads and metal reflective layers form portions of electrically conductive pathways between contacts and active LED structures. Dielectric reflective layers and metal reflective layers may form reflective structures proximate active LED structures, while also extending outside active LED structures proximate landing pads. Landing pads may extend through openings of dielectric reflective layers to form electrical connections with metal reflective layers. As described herein, landing pad structures allow increased thickness of metal reflective layers to reduce topography variations, increase current handling, and/or increase reflectivity in LED chips.

Abstract: Solid-state lighting devices, and more particularly to a three-dimensional (3D) light-emitting diode (LED) device and a method of manufacture are disclosed. A submount of the LED can have several submount portions that are angled with respect to each other, and LED chips can be mounted on each submount portion, such that the LED chips of the device are angled at different angles with respect to each other. In an embodiment, the LED device can include a heatsink that is in contact with each of the submount portions to channel heat away from the LED chips. The LED chips can be mounted on the submount portions when all submount portions are laying flat, and then the submount portions can be pushed or punched into their respective angles.

Abstract: Light-emitting diodes (LEDs), and more particularly, lenses formed by additive manufacturing for LED packages are disclosed. Additive manufacturing is used to progressively cure precursor materials for lenses in directions away from corresponding submounts. Progressively curing precursor materials may be performed in a layer-by-layer manner or in a continuous manner. Such additive manufacturing allows complex lens shapes that form primary optics and encapsulation for LED chips of LED packages. Complex shapes include pockets of air or other materials embedded within lens materials, pockets formed about LED chips, progressively increasing lens widths, Fresnel shapes, and/or asymmetric shapes, among others.

Abstract: Light-emitting diode (LED) chips and, more particularly, LED chips with light extraction films and related methods are disclosed. Light extraction films include antireflective structures that are integrated within LED chip structures. Antireflective structures include one or more antireflective layers positioned to reduce internal reflections at various internal interfaces of LED chips. Certain LED chip structures include antireflective structures positioned between epitaxially grown active LED structures and carrier substrates on which the active LED structures are supported. Wafer level bonding sequences with one or more bonding layers are disclosed that facilitate integration of antireflective structures within LED chip structures.

Abstract: Semiconductor devices and more particularly multiple junction light-emitting diode (LED) chips and related methods are disclosed. LED chips include multiple active LED structures that are bonded together. The active LED structures may be vertically bonded within the LED chip. Bonding layers are provided between active LED structures with sufficient thicknesses to maintain mechanical integrity within the LED chip. Bonding layers may be formed of electrically insulating materials with electrically conductive vias formed therethrough to provide electrically conductive paths between active LED structures. Active LED structures may be connected in series for high voltage applications. Emissions from the active LED structures may have same emission colors, multiple distinct emission colors, and/or variations in peak wavelengths within a same color range.

Abstract: Semiconductor devices and more particularly mounting structures for edge-emitting semiconductor devices are disclosed. Exemplary edge-emitting semiconductor devices include light-emitting diode (LED) edge emitters. Mounting structures include submounts with recesses configured to receive edge-emitting semiconductor devices such that emitting edges are positioned toward desired emission directions. Submount recesses are disclosed that include corresponding electrical connections for edge-emitting semiconductor devices. Multiple edge-emitting semiconductor devices are mechanically supported and electrically connected within a single recess or with multiple recesses. Corresponding devices are disclosed that include arrays of edge-emitting semiconductor devices in one or more recesses.

Abstract: Semiconductor devices and more particularly edge-emitting semiconductor devices and related methods are disclosed. Exemplary edge-emitting semiconductor devices include LED edge emitters. Electrical connections for edge-emitting devices may be provided along certain device edges with opposing edges forming light-emitting edges. LED edge emitters may be vertically arranged and assembled together to form LED arrays with reduced pitch. Related methods include bonding multiple wafer-level structures, such as LED wafers, together, followed by separation techniques that result in individual edge emitters or groupings of edge emitters in the form of LED arrays.

Abstract: Embodiments of a light-emitting diode (LED) device are disclosed. In some embodiments, the LED device includes a first LED device and one or more other LED devices mounted to the first LED device. By mounting the other LED devices to the first LED device, the LED devices are arranged in a stacked configuration. This allows for better light mixing of the light emitted by the various LED devices since the LED devices are at least partially aligned with one another. Different manners of stacking the LED devices are disclosed. The scope of the disclosure includes the specific embodiments disclosed as well as other combinations depending on the color mixing profile that is desired.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly arrangements of lumiphoric materials within LED chips are disclosed. Lumiphoric materials are incorporated or otherwise embedded within LED chips. Embedded lumiphoric materials are provided so that at least some portions of light generated by active LED structures are subject to wavelength conversion before exiting LED chip surfaces. Lumiphoric materials may form dielectric and/or passivation layers between various chip structures, such as between active LED structures and internal reflective layers and/or electrical contacts. Internally converted light propagating within LED chips may pass back through active LED structures with reduced light absorption.

Abstract: Solid-state lighting devices, and more particularly to a three-dimensional (3D) light-emitting diode (LED) device and a method of manufacture are disclosed. A submount of the LED can have several submount portions that are angled with respect to each other, and LED chips can be mounted on each submount portion, such that the LED chips of the device are angled at different angles with respect to each other. In an embodiment, the LED device can include a heatsink that is in contact with each of the submount portions to channel heat away from the LED chips. The LED chips can be mounted on the submount portions when all submount portions are laying flat, and then the submount portions can be pushed or punched into their respective angles.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED packages with materials for reducing effects of environmental ingress are disclosed. Reactive materials are provided within LED packages that preferentially absorb environmental ingress away from other package elements, thereby extending operating lifetimes. Such reactive materials may be configured with redox potentials that are lower than the other package elements to more readily attract and react with environmental ingress that may enter LED packages under various operating environments. Arrangements of reactive materials are described relative to LED chips and corresponding electrical connections. Reactive materials may be formed as coatings, layers, pre-formed structures, and/or distributions of particles within LED packages.

Abstract: Solid-state lighting devices, and more particularly to a three-dimensional (3D) light-emitting diode (LED) device and a method of manufacture are disclosed. A submount of the LED can have several submount portions that are angled with respect to each other, and LED chips can be mounted on each submount portion, such that the LED chips of the device are angled at different angles with respect to each other. In an embodiment, the LED device can include a heatsink that is in contact with each of the submount portions to channel heat away from the LED chips. The LED chips can be mounted on the submount portions when all submount portions are laying flat, and then the submount portions can be pushed or punched into their respective angles.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly material arrangements in cover structures for LEDs that tailor light emissions are disclosed. Material arrangements include light-filtering particles or ionic species that are integrated within materials of covers structures that cover LED chips within LED packages. Light-filtering materials may be configured to selectively filter one or more portions of light provided by LED chips and/or lumiphoric materials within LED packages. Dispersing light-filtering materials within covers structures provides protection and mechanical support for the light-filtering materials. Additionally, arrangements and concentrations of light-filtering materials within cover structures may be varied horizontally and/or vertically to tailor emission patterns of corresponding LED packages. Material arrangements include light-filtering species incorporated at an atomic level within cover structures.