Abstract: In a method for manufacturing an electrostatic discharge protection circuit, an electrostatic discharge device structure is formed during a front side processing of a semiconductor substrate in a first area. Contact pads are formed on the front side on the electrostatic discharge device structure and in a second area. During back side processing of the semiconductor substrate, a metal connection between the first electrostatic discharge device structure and the second area is formed.

Abstract: An ESD protection device may include: a first vertically integrated ESD protection structure comprising a first semiconductor portion, a first contact region disposed on a first side of the first semiconductor portion and a first terminal exposed on a second side of the first semiconductor portion opposite the first side of the first semiconductor portion, a second vertically integrated ESD protection structure comprising a second semiconductor portion, a second contact region disposed on a first side of the second semiconductor portion and a second terminal exposed on a second side of the second semiconductor portion opposite the first side of the second semiconductor portion, an electrical connection layer, wherein the first vertically integrated ESD protection structure and the second vertically integrated ESD protection structure are disposed on the electrical connection layer laterally separated from each other and are electrically connected with each other anti-serially via the electrical connection lay

Abstract: An overvoltage protection device includes a semiconductor body including a substrate region disposed beneath an upper surface of the semiconductor body, first and second contact pads disposed over the upper surface of the semiconductor body, a trenched connector formed in the semiconductor body, a vertical voltage blocking device formed in the semiconductor body, wherein the trenched connector includes a trench that is formed in the upper surface of the semiconductor body and extends to the substrate region, and a metal electrode disposed within the trench, wherein the metal electrode forms an electrically conductive connection between the first contact pad and the substrate region, and wherein the voltage blocking device is connected between the second contact pad and the substrate region.

Abstract: A method of forming a semiconductor device includes forming a first vertical protection device comprising a thyristor in a substrate, forming a first lateral trigger element for triggering the first vertical protection device in the substrate, and forming an electrical path in the substrate to electrically couple the first lateral trigger element with the first vertical protection device.

Abstract: In a method for manufacturing an electrostatic discharge protection circuit, an electrostatic discharge device structure is formed during a front side processing of a semiconductor substrate in a first area. Contact pads are formed on the front side on the electrostatic discharge device structure and in a second area. During back side processing of the semiconductor substrate, a metal connection between the first electrostatic discharge device structure and the second area is formed.

Abstract: An ESD protection device may include: a first vertically integrated ESD protection structure comprising a first semiconductor portion, a first contact region disposed on a first side of the first semiconductor portion and a first terminal exposed on a second side of the first semiconductor portion opposite the first side of the first semiconductor portion, a second vertically integrated ESD protection structure comprising a second semiconductor portion, a second contact region disposed on a first side of the second semiconductor portion and a second terminal exposed on a second side of the second semiconductor portion opposite the first side of the second semiconductor portion, an electrical connection layer, wherein the first vertically integrated ESD protection structure and the second vertically integrated ESD protection structure are disposed on the electrical connection layer laterally separated from each other and are electrically connected with each other anti-serially via the electrical connection lay

Abstract: An ESD protection device may include: a first vertically integrated ESD protection structure comprising a first semiconductor portion, a first contact region disposed on a first side of the first semiconductor portion and a first terminal exposed on a second side of the first semiconductor portion opposite the first side of the first semiconductor portion, a second vertically integrated ESD protection structure comprising a second semiconductor portion, a second contact region disposed on a first side of the second semiconductor portion and a second terminal exposed on a second side of the second semiconductor portion opposite the first side of the second semiconductor portion, an electrical connection layer, wherein the first vertically integrated ESD protection structure and the second vertically integrated ESD protection structure are disposed on the electrical connection layer laterally separated from each other and are electrically connected with each other anti-serially via the electrical connection lay

Abstract: A method of forming a semiconductor device includes forming a first vertical protection device comprising a thyristor in a substrate, forming a first lateral trigger element for triggering the first vertical protection device in the substrate, and forming an electrical path in the substrate to electrically couple the first lateral trigger element with the first vertical protection device.

Abstract: A semiconductor device includes a vertical protection device having a thyristor and a lateral trigger element disposed in a substrate. The lateral trigger element is for triggering the vertical protection device.

Abstract: An ESD protection device may include: a first vertically integrated ESD protection structure comprising a first semiconductor portion, a first contact region disposed on a first side of the first semiconductor portion and a first terminal exposed on a second side of the first semiconductor portion opposite the first side of the first semiconductor portion, a second vertically integrated ESD protection structure comprising a second semiconductor portion, a second contact region disposed on a first side of the second semiconductor portion and a second terminal exposed on a second side of the second semiconductor portion opposite the first side of the second semiconductor portion, an electrical connection layer, wherein the first vertically integrated ESD protection structure and the second vertically integrated ESD protection structure are disposed on the electrical connection layer laterally separated from each other and are electrically connected with each other anti-serially via the electrical connection lay

Abstract: According an embodiment, an electrostatic discharge protection structure includes: a semiconductor layer doped with a dopant of a first doping type, a first well region extending from a surface of the semiconductor layer into the semiconductor layer, wherein the first well region is doped with a dopant of a second doping type opposite the first doping type; a second well region next to the first well region and extending from the surface of the semiconductor layer into the semiconductor layer, wherein the second well region is doped with a dopant of the first doping type; an isolation structure extending from the surface of the semiconductor layer into the semiconductor layer with a depth similar to the depth of at least one of the first well region or the second well region, wherein the isolation structure is arranged laterally adjacent to the first well region and the second well region.

Abstract: A method for manufacturing an electronic device includes: providing a semiconductor carrier including first and second vertically integrated electronic structures laterally spaced apart from each other, an electrical connection layer disposed over a first side of the semiconductor carrier and electrically connecting the first and second vertically integrated electronic structures with each other; mounting the semiconductor carrier on a support carrier with the first side of the semiconductor carrier facing the support carrier; thinning the semiconductor carrier from a second side opposite the first side; and removing material of the semiconductor carrier in a separation region between the first and second vertically integrated electronic structures to separate a first semiconductor region of the first vertically integrated electronic structure from a second semiconductor region of the second vertically integrated electronic structure with the first and second vertically integrated electronic structures remain

Abstract: A chip package and manufacturing method is disclosed. In one example, the method includes forming a carrier wafer with a plurality of trenches, each trench being at least partially covered with an electrically conductive sidewall coating. A semiconductor wafer is bonded on a front side of the carrier wafer. An electrically conductive connection structure is formed, including at least partially bridging a gap between the electrically conductive sidewall coating and an integrated circuit element of a respective one of the electronic chips. Material on a backside of the carrier wafer is removed to singularize the bonded wafers at the trenches into a plurality of semiconductor devices.

Abstract: In one embodiment of the present invention, an electronic device includes a first emitter/collector region and a second emitter/collector region disposed in a substrate. The first emitter/collector region has a first edge/tip, and the second emitter/collector region has a second edge/tip. A gap separates the first edge/tip from the second edge/tip. The first emitter/collector region, the second emitter/collector region, and the gap form a field emission device.

Abstract: According to various embodiments, a method for manufacturing a semiconductor device may include providing a semiconductor workpiece including a device region at a first side of the semiconductor workpiece, wherein a mechanical stability of the semiconductor workpiece is insufficient to resist at least one back end process without damage, and depositing at least one conductive layer over a second side of the semiconductor workpiece opposite the first side of the semiconductor workpiece, wherein the at least one conductive layer increases the mechanical stability of the semiconductor workpiece to be sufficient to resist the at least one back end process without damage.

Abstract: A chip package and manufacturing method is disclosed. In one example, the method includes forming a carrier wafer with a plurality of trenches, each trench being at least partially covered with an electrically conductive sidewall coating. A semiconductor wafer is bonded on a front side of the carrier wafer. An electrically conductive connection structure is formed, including at least partially bridging a gap between the electrically conductive sidewall coating and an integrated circuit element of a respective one of the electronic chips. Material on a backside of the carrier wafer is removed to singularize the bonded wafers at the trenches into a plurality of semiconductor devices.

Abstract: An arrangement is provided. The arrangement may include: a substrate having a front side and a back side, a die region within the substrate, a multi-purpose layer defining a back side of the die region, and an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate. The multi-purpose layer may be formed of an ohmic material, and the etch stop layer may be of a first conductivity type of a first doping concentration.

Abstract: According an embodiment, an electrostatic discharge protection structure includes: a semiconductor layer doped with a dopant of a first doping type, a first well region extending from a surface of the semiconductor layer into the semiconductor layer, wherein the first well region is doped with a dopant of a second doping type opposite the first doping type; a second well region next to the first well region and extending from the surface of the semiconductor layer into the semiconductor layer, wherein the second well region is doped with a dopant of the first doping type; an isolation structure extending from the surface of the semiconductor layer into the semiconductor layer with a depth similar to the depth of at least one of the first well region or the second well region, wherein the isolation structure is arranged laterally adjacent to the first well region and the second well region.

Abstract: A method for manufacturing an electronic device includes: providing a semiconductor carrier including first and second vertically integrated electronic structures laterally spaced apart from each other, an electrical connection layer disposed over a first side of the semiconductor carrier and electrically connecting the first and second vertically integrated electronic structures with each other; mounting the semiconductor carrier on a support carrier with the first side of the semiconductor carrier facing the support carrier; thinning the semiconductor carrier from a second side opposite the first side; and removing material of the semiconductor carrier in a separation region between the first and second vertically integrated electronic structures to separate a first semiconductor region of the first vertically integrated electronic structure from a second semiconductor region of the second vertically integrated electronic structure with the first and second vertically integrated electronic structures remain

Abstract: A vertically integrated semiconductor device in accordance with various embodiments may include: a first semiconducting layer; a second semiconducting layer disposed over the first semiconducting layer; a third semiconducting layer disposed over the second semiconducting layer; and an electrical bypass coupled between the first semiconducting layer and the second semiconducting layer.