Patents by Inventor Andre Schwagmann

Andre Schwagmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power semiconductor device edge structure
    Patent number: 9905634
    Abstract: A semiconductor device having a first load terminal, a second load terminal and a semiconductor body is presented. The semiconductor body comprises an active region configured to conduct a load current between the first load terminal and the second load terminal and a junction termination region surrounding the active region.
    Type: Grant
    Filed: June 21, 2016
    Date of Patent: February 27, 2018
    Assignee: Infineon Technologies Austria AG
    Inventors: Andre Schwagmann, Elmar Falck, Hans-Joachim Schulze
  • Semiconductor devices with transistor cells and thermoresistive element
    Patent number: 9576944
    Abstract: A semiconductor device includes a first load terminal electrically coupled to a source zone of a transistor cell. A gate terminal is electrically coupled to a gate electrode which is capacitively coupled to a body zone of the transistor cell. The source and body zones are formed in a semiconductor portion. A thermoresistive element is thermally connected to the semiconductor portion and is electrically coupled between the gate terminal and the first load terminal. Above a maximum operation temperature specified for the semiconductor device, an electric resistance of the thermoresistive element decreases by at least two orders of magnitude within a critical temperature span of at most 50 Kelvin.
    Type: Grant
    Filed: December 4, 2015
    Date of Patent: February 21, 2017
    Assignee: Infineon Technologies AG
    Inventors: Johannes Georg Laven, Christian Jaeger, Joachim Mahler, Daniel Pedone, Anton Prueckl, Hans-Joachim Schulze, Andre Schwagmann, Patrick Schwarz
  • Power Semiconductor Device Edge Structure
    Publication number: 20170005163
    Abstract: A semiconductor device having a first load terminal, a second load terminal and a semiconductor body is presented. The semiconductor body comprises an active region configured to conduct a load current between the first load terminal and the second load terminal and a junction termination region surrounding the active region.
    Type: Application
    Filed: June 21, 2016
    Publication date: January 5, 2017
    Inventors: Andre Schwagmann, Elmar Falck, Hans-Joachim Schulze
  • Semiconductor Devices with Transistor Cells and Thermoresistive Element
    Publication number: 20160163689
    Abstract: A semiconductor device includes a first load terminal electrically coupled to a source zone of a transistor cell. A gate terminal is electrically coupled to a gate electrode which is capacitively coupled to a body zone of the transistor cell. The source and body zones are formed in a semiconductor portion. A thermoresistive element is thermally connected to the semiconductor portion and is electrically coupled between the gate terminal and the first load terminal. Above a maximum operation temperature specified for the semiconductor device, an electric resistance of the thermoresistive element decreases by at least two orders of magnitude within a critical temperature span of at most 50 Kelvin.
    Type: Application
    Filed: December 4, 2015
    Publication date: June 9, 2016
    Inventors: Johannes Georg Laven, Christian Jaeger, Joachim Mahler, Daniel Pedone, Anton Prueckl, Hans-Joachim Schulze, Andre Schwagmann, Patrick Schwarz