Patents by Inventor Andre SOMERS
Andre SOMERS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11837844Abstract: A method for singulating semiconductor components (20) is specified, said method comprising the steps of providing a carrier (21), applying at least two semiconductor chips (22) on the carrier (21), etching at least one break nucleus (23) at a side of the carrier (21) facing the semiconductor chips (22), and singulating at least two semiconductor components (20) by breaking the carrier (21) along the at least one break nucleus (23). The at least one break nucleus (23) extends at least in places in a vertical direction (z), the vertical direction (z) being perpendicular to a main extension plane of the carrier (21), and the at least one break nucleus (23) is arranged between the two semiconductor chips (22) in a lateral direction (x), the lateral direction (x) being parallel to the main extension plane of the carrier (21).Type: GrantFiled: December 27, 2018Date of Patent: December 5, 2023Assignee: OSRAM OLED GMBHInventors: John Brückner, Urs Heine, Sven Gerhard, Lars Nähle, Andreas Löffler, André Somers
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Publication number: 20220337027Abstract: An optoelectronic component (1) is specified having: an optoelectronic semiconductor chip (2) which generates electromagnetic radiation during operation, and a metallic layer (3) which is arranged on the semiconductor chip (2), wherein an outer surface of the metallic layer (4) has a structuring (5), identification of the component (1) is made possible by means of the structuring (5), and the metallic layer (3) is formed continuously. Furthermore, a method for producing an optoelectronic component (1) is specified.Type: ApplicationFiled: November 27, 2019Publication date: October 20, 2022Inventors: Sven Gerhard, André Somers, Harald König, Muhammad Ali
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Patent number: 11086138Abstract: A method of autostereoscopic imaging including providing an autostereoscopic illumination unit including a lens field composed of a multiplicity of individual lenses or concave mirrors, and modulating an emission characteristic of the light source such that the individual lenses or the concave mirrors are illuminated only partly by the light source, wherein light from the light source impinges on the individual lenses or concave mirrors such that an emission characteristic of a three-dimensional object is imitated, the lens field extends over a spatial angle range of at least 2 sr relative to the light source or an external observer, the individual lenses or concave mirrors are distributed over the lens field and are at least partially sequentially irradiated, and the light source is formed by one or more lasers and the laser or each of the lasers irradiates/irradiate only one of the individual lenses at a specific point in time.Type: GrantFiled: July 24, 2017Date of Patent: August 10, 2021Assignee: OSRAM OLED GmbHInventors: Bernhard Stojetz, Alfred Lell, Christoph Eichler, Andreas Löffler, Harald König, André Somers, Clemens Vierheilig
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Patent number: 11004876Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.Type: GrantFiled: July 31, 2019Date of Patent: May 11, 2021Assignee: OSRAM OLED GMBHInventors: Christoph Eichler, Andre Somers, Harald Koenig, Bernhard Stojetz, Andreas Loeffler, Alfred Lell
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Publication number: 20210057884Abstract: In an embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) in which an active zone (22) for generating laser radiation (L) is located. Several electrical contact surfaces (5) serve for external electrical contacting of the semiconductor layer sequence (2). Several parallel ridge waveguides (3) are formed from the semiconductor layer sequence (2) and configured to guide the laser radiation (L) along a resonator axis, so that there is a separating trench (6) between adjacent ridge waveguides. At least one electrical feed (4) serves from at least one of the electrical contact surfaces (5) to guide the current to at least one of the ridge waveguides (3). A distance (A4) between the ridge waveguides is at most 50 ?m. The ridge waveguides (3) are electrically controllable individually or in groups independently of one another and/or configured for single-mode operation.Type: ApplicationFiled: March 13, 2019Publication date: February 25, 2021Inventors: Jan Marfeld, André Somers, Andreas Löffler, Sven Gerhard
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Publication number: 20200388985Abstract: A method for singulating semiconductor components (20) is specified, said method comprising the steps of providing a carrier (21), applying at least two semiconductor chips (22) on the carrier (21), etching at least one break nucleus (23) at a side of the carrier (21) facing the semiconductor chips (22), and singulating at least two semiconductor components (20) by breaking the carrier (21) along the at least one break nucleus (23). The at least one break nucleus (23) extends at least in places in a vertical direction (z), the vertical direction (z) being perpendicular to a main extension plane of the carrier (21), and the at least one break nucleus (23) is arranged between the two semiconductor chips (22) in a lateral direction (x), the lateral direction (x) being parallel to the main extension plane of the carrier (21).Type: ApplicationFiled: December 27, 2018Publication date: December 10, 2020Inventors: John BRÜCKNER, Urs HEINE, Sven GERHARD, Lars NÄHLE, Andreas LLöffler, André SOMERS
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Patent number: 10693033Abstract: A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).Type: GrantFiled: June 25, 2019Date of Patent: June 23, 2020Assignee: OSRAM OLED GMBHInventors: Alfred Lell, Andreas Löffler, Christoph Eichler, Bernhard Stojetz, André Somers
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Patent number: 10637211Abstract: A light-emitting semiconductor chip (100) is provided, having a first semiconductor layer (1), which is at least part of an active layer provided for generating light and which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).Type: GrantFiled: May 12, 2017Date of Patent: April 28, 2020Assignee: OSRAM OLED GMBHInventors: Christoph Eichler, Andre Somers, Bernhard Stojetz, Andreas Loeffler, Alfred Lell
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Publication number: 20190355768Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.Type: ApplicationFiled: July 31, 2019Publication date: November 21, 2019Inventors: Christoph EICHLER, Andre SOMERS, Harald KOENIG, Bernhard STOJETZ, Andreas LOEFFLER, Alfred LELL
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Publication number: 20190319162Abstract: A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).Type: ApplicationFiled: June 25, 2019Publication date: October 17, 2019Inventors: Alfred LELL, Andreas LÖEFFLER, Christoph EICHLER, Bernhard STOJETZ, André SOMERS
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Patent number: 10396106Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.Type: GrantFiled: May 12, 2017Date of Patent: August 27, 2019Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Christoph Eichler, Andre Somers, Harald Koenig, Bernhard Stojetz, Andreas Loeffler, Alfred Lell
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Patent number: 10388823Abstract: A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).Type: GrantFiled: May 12, 2017Date of Patent: August 20, 2019Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Alfred Lell, Andreas Loeffler, Christoph Eichler, Bernhard Stojetz, Andre Somers
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Publication number: 20190235261Abstract: A method of autostereoscopic imaging including providing an autostereoscopic illumination unit including a lens field composed of a multiplicity of individual lenses or concave mirrors, and modulating an emission characteristic of the light source such that the individual lenses or the concave mirrors are illuminated only partly by the light source, wherein light from the light source impinges on the individual lenses or concave mirrors such that an emission characteristic of a three-dimensional object is imitated, the lens field extends over a spatial angle range of at least 2 sr relative to the light source or an external observer, the individual lenses or concave mirrors are distributed over the lens field and are at least partially sequentially irradiated, and the light source is formed by one or more lasers and the laser or each of the lasers irradiates/irradiate only one of the individual lenses at a specific point in time.Type: ApplicationFiled: July 24, 2017Publication date: August 1, 2019Inventors: Bernhard Stojetz, Alfred Lell, Christoph Eichler, Andreas Löffler, Harald König, André Somers, Clemens Vierheilig
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Patent number: 10270225Abstract: A semiconductor laser arrangement and a projector are disclosed. In an embodiment the semiconductor laser arrangement includes at least two electrically pumped active zones, each active zone configured to emit laser radiation of a different emission wavelength and a semiconductor-based waveguide structure, wherein the active zones are electrically independently operable of one another, wherein the active zones optically follow directly one another along a beam direction and are arranged in a descending manner with regard to their emission wavelengths, wherein at least in a region of a last active zone along the beam direction, a laser radiation of all active zones jointly runs through the waveguide structure, wherein at least the last active zone comprises a plurality of waveguides which are stacked one above the other and are oriented parallel to one another, wherein one of the waveguides is configured for the radiation emitted by the last active zone.Type: GrantFiled: November 2, 2016Date of Patent: April 23, 2019Assignee: OSRAM Opto Semiconductors GmbHInventors: Bernhard Stojetz, Alfred Lell, Christoph Eichler, Andreas Löffler, André Somers
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Publication number: 20180323581Abstract: A semiconductor laser arrangement and a projector are disclosed. In an embodiment the semiconductor laser arrangement includes at least two electrically pumped active zones, each active zone configured to emit laser radiation of a different emission wavelength and a semiconductor-based waveguide structure, wherein the active zones are electrically independently operable of one another, wherein the active zones optically follow directly one another along a beam direction and are arranged in a descending manner with regard to their emission wavelengths, wherein at least in a region of a last active zone along the beam direction, a laser radiation of all active zones jointly runs through the waveguide structure, wherein at least the last active zone comprises a plurality of waveguides which are stacked one above the other and are oriented parallel to one another, wherein one of the waveguides is configured for the radiation emitted by the last active zone.Type: ApplicationFiled: November 2, 2016Publication date: November 8, 2018Inventors: Bernhard Stojetz, Alfred Lell, Christoph Eichler, Andreas Löffler, André Somers
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Publication number: 20170331257Abstract: A light-emitting semiconductor chip (100) is provided, having a first semiconductor layer (1), which is at least part of an active layer provided for generating light and which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).Type: ApplicationFiled: May 12, 2017Publication date: November 16, 2017Inventors: Christoph EICHLER, Andre SOMERS, Bernhard STOJETZ, Andreas LOEFFLER, Alfred LELL
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Publication number: 20170330757Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.Type: ApplicationFiled: May 12, 2017Publication date: November 16, 2017Inventors: Christoph EICHLER, Andre SOMERS, Harald KOENIG, Bernhard STOJETZ, Andreas LOEFFLER, Alfred LELL
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Publication number: 20170330996Abstract: A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).Type: ApplicationFiled: May 12, 2017Publication date: November 16, 2017Inventors: Alfred LELL, Andreas LOEFFLER, Christoph EICHLER, Bernhard STOJETZ, Andre SOMERS