Abstract: The invention relates to an optoelectronic semiconductor component including a semiconductor body having a first region with a first conductivity, a second region with a second conductivity and an active region which is designed to emit coherent electromagnetic radiation. An optical resonator is formed along a resonator axis in the semiconductor body. The semiconductor body has a mounting side and side surfaces running transversely to the mounting side. Side surfaces running parallel to the resonator axis are covered by an electrically insulating passivation. A cooling layer which is designed to dissipate at least part of the power loss created in the semiconductor body during operation is arranged on a side of the passivation facing away from the semiconductor body. The invention also relates to an optoelectronic module.

Abstract: A component including a carrier and exactly two semiconductor chips arranged next to one another on the carrier is specified, the exactly two semiconductor chips are each embodied as a double-emitter having exactly two emitter regions or each being embodied as a triple-emitter having exactly three emitter regions and are thus different from a single-emitter. The emitter regions of the component are assigned to the exactly two semiconductor chips, the exactly two semiconductor chips being laser diodes which each have ridges defining the emitter region. The exactly two semiconductor chips are electrically contacted via the carrier.

Abstract: A semiconductor chip with a structured chip back side is specified, the chip back side being configured for electrical and thermal linking of the semiconductor chip, the semiconductor chip having emitter regions configured for producing electromagnetic radiation and the structured chip back side having connection pads configured for electrical linking of the emitter regions. The connection pads are p-contacts or n-contacts, with, in a plan view, all connection pads (which are configured either as p-contacts or as n-contacts overlapping with at least two of the emitter regions in each case and each of these connection pads being configured for electrical linking of only one of the emitter regions. Moreover, a component is specified, in particular comprising at least one such semiconductor chip.

Abstract: A method for singulating semiconductor components (20) is specified, said method comprising the steps of providing a carrier (21), applying at least two semiconductor chips (22) on the carrier (21), etching at least one break nucleus (23) at a side of the carrier (21) facing the semiconductor chips (22), and singulating at least two semiconductor components (20) by breaking the carrier (21) along the at least one break nucleus (23). The at least one break nucleus (23) extends at least in places in a vertical direction (z), the vertical direction (z) being perpendicular to a main extension plane of the carrier (21), and the at least one break nucleus (23) is arranged between the two semiconductor chips (22) in a lateral direction (x), the lateral direction (x) being parallel to the main extension plane of the carrier (21).

Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.

Abstract: A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).

Abstract: A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).

Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.

Abstract: A light-emitting semiconductor chip (100) is provided, having a first semiconductor layer (1), which is at least part of an active layer provided for generating light and which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).