Patents by Inventor Andre Wachowiak

Andre Wachowiak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200020790
    Abstract: An electronic circuit having a semiconductor device is provided that includes a heterostructure, the heterostructure including a first layer of a compound semiconductor to which a second layer of a compound semiconductor adjoins in order to form a channel for a 2-dimensional electron gas (2DEG), wherein the 2-dimensional electron gas is not present. In aspects, an electronic circuit having a semiconductor device is provided that includes a III-V heterostructure, the III-V heterostructure including a first layer including GaN to which a second layer adjoins in order to form a channel for a 2-dimensional electron gas (2DEG), and having a purity such that the 2-dimensional electron gas is not present. It is therefore advantageous for the present electronic circuit to be enclosed such that, in operation, no light of wavelengths of less than 400 nm may reach the III-V heterostructure and free charge carriers may be generated by these wavelengths.
    Type: Application
    Filed: July 11, 2019
    Publication date: January 16, 2020
    Inventors: Stefan SCHMULT, Andre WACHOWIAK, Alexander RUF
  • Patent number: 8946617
    Abstract: A photodiode comprises a semiconductor material having a p-n junction, the p-n junction being located between a first doping region of a first doping type and a second doping region of a second doping type, the second doping region comprising a highly doped layer and a lightly doped layer. A photodiode further comprises a voltage source being capable to apply a variable voltage between the first doping region and the lightly doped layer of the second doping region in order to vary the expansion of a space charge zone of the p-n junction.
    Type: Grant
    Filed: November 10, 2011
    Date of Patent: February 3, 2015
    Assignee: NaMLab gGmbH
    Inventors: Juergen Holz, Andre Wachowiak, Stefan Slesazeck
  • Publication number: 20120286144
    Abstract: A photodiode comprises a semiconductor material having a p-n junction, the p-n junction being located between a first doping region of a first doping type and a second doping region of a second doping type, the second doping region comprising a highly doped layer and a lightly doped layer. A photodiode further comprises a voltage source being capable to apply a variable voltage between the first doping region and the lightly doped layer of the second doping region in order to vary the expansion of a space charge zone of the p-n junction.
    Type: Application
    Filed: November 10, 2011
    Publication date: November 15, 2012
    Applicant: NaMLab GmbH
    Inventors: Juergen Holz, Andre Wachowiak, Stefan Slesazeck