Abstract: The memory device includes a plurality of memory chips of a certain capacity assembled in a single package and sharing input/output pins, the memories being selectable and singularly enabled one at the time by appropriate external commands coherently with the currently addressed memory location. The device uses only one external enable/disable logic command applied through a single dedicated pin. Each of the memory chips has a number of additional input/output pads equal to 2*n, where 2n is the number of memory chips contained in the device, and a dedicated circuit that generates an internal enable/disable command, as a function of logic inputs corresponding to the logic states of the additional pads and the external enable/disable command.

Abstract: A nonvolatile memory device with simultaneous read/write has a memory array formed by a plurality of cells organized into memory banks, and a plurality of first and second sense amplifiers. The device further has a plurality of R/W selectors associated to respective sets of cells and connecting the cells of the respective sets of cells alternately to the first sense amplifiers and to the second sense amplifiers.

Abstract: A nonvolatile memory device with simultaneous read/write has a memory array formed by a plurality of cells organized into memory banks, and a plurality of first and second sense amplifiers. The device further has a plurality of R/W selectors associated to respective sets of cells and connecting the cells of the respective sets of cells alternately to the first sense amplifiers and to the second sense amplifiers.

Abstract: The memory device includes a plurality of memory chips of a certain capacity assembled in a single package and sharing input/output pins, the memories being selectable and singularly enabled one at the time by appropriate external commands coherently with the currently addressed memory location. The device uses only one external enable/disable logic command applied through a single dedicated pin. Each of the memory chips has a number of additional input/output pads equal to 2*n, where 2n is the number of memory chips contained in the device, and a dedicated circuit that generates an internal enable/disable command, as a function of logic inputs corresponding to the logic states of the additional pads and the external enable/disable command.

Abstract: An impedance control circuit controls the impedance of an integrated output driving stage. The integrated output driving stage includes at least one enabling/disabling transistor and at least one driving transistor. The impedance control circuit includes a variable impedance circuit having an impedance that varies with the temperature in correlation with the impedance of the output driving stage. A control circuit is connected to the variable impedance circuit for generating at least one enabling/disabling signal for the at least one enabling/disabling transistor based upon a control signal correlated to the impedance of the variable impedance circuit. The impedance control circuit also includes a current generating circuit for applying to the variable impedance circuit a current which remains substantially stable as the temperature varies.

Abstract: An impedance control circuit controls the impedance of an integrated output driving stage. The integrated output driving stage includes at least one enabling/disabling transistor and at least one driving transistor. The impedance control circuit includes a variable impedance circuit having an impedance that varies with the temperature in correlation with the impedance of the output driving stage. A control circuit is connected to the variable impedance circuit for generating at least one enabling/disabling signal for the at least one enabling/disabling transistor based upon a control signal correlated to the impedance of the variable impedance circuit. The impedance control circuit also includes a current generating circuit for applying to the variable impedance circuit a current which remains substantially stable as the temperature varies.