Abstract: An RF transmitter comprising an optical source configured to generate a pair of optical lines separated by an RF carrier frequency. The transmitter may comprise a graphene photodetector having at least two electrical contacts; a transmit antenna coupled to a first of the electrical contacts; and an electrical data signal input connected to a second of the electrical contacts. The graphene photodetector is illuminated by the optical source; it may comprise a graphene photo-thermal effect (PTE) photodetector or a bolometric photodetector. A corresponding receiver is also described.

Abstract: An RF transmitter comprising an optical source configured to generate a pair of optical lines separated by an RF carrier frequency. The transmitter may comprise a graphene photodetector having at least two electrical contacts; a transmit antenna coupled to a first of the electrical contacts; and an electrical data signal input connected to a second of the electrical contacts. The graphene photodetector is illuminated by the optical source; it may comprise a graphene photo-thermal effect (PTE) photodetector or a bolometric photodetector. A corresponding receiver is also described.

Abstract: A Wavelength Division Multiplexing (WDM) for an optical fibre comprising a set of optical inputs, one for each wavelength of a WDM optical signal to be transmitted, a graphene electro-absorption modulator (EAM) for each optical input to modulate light from the optical input, and one or more drivers to drive each graphene electro-absorption modulator. The drivers have a data input, a low pass filter to low-pass filter data from the data input to provide low pass filtered data, and an output to drive each graphene electro-absorption modulator with a combination of the low pass filtered data and a bias voltage. The bias voltage is configured to bias the graphene EAM into a region in which, e.g., when the transmission of the graphene electro-absorption modulator increases the effective refractive index for the modulated light decreases and vice-versa to pre-chirp to the modulated light to compensate for dispersion in the fibre.

Abstract: A quantum light emitting device includes a carrier substrate, an insulator, a first semiconductor device, a second semiconductor device, a first contact, and a second contact. The quantum light device includes a carrier substrate comprising silicon and configured with an electrically insulating top surface. The quantum light device also includes an insulator configured on the carrier substrate. The quantum light device includes a first semiconductor structure comprising a first semiconductor material configured on the insulator. Further, the quantum light device includes a second semiconductor structure comprising a second semiconductor material configured on the insulator, with an overlap region of the second semiconductor structure electrically coupling with the first semiconductor structure, a dimensional characteristic of the overlap region being configured to limit a photon emission from the overlap region to a single photon.

Abstract: An apparatus including first and second layers of electrically conductive material separated by a layer of electrically insulating material, wherein one or both layers of electrically conductive material include graphene, and wherein the apparatus is configured such that electrons are able to tunnel from the first layer of electrically conductive material through the layer of electrically insulating material to the second layer of electrically conductive material.

Abstract: Apparatus and methods are provided. A first apparatus includes: a semiconductor film; and at least one semiconductor nanostructure, including a heterojunction, configured to modulate the conductivity of the semiconductor film by causing photo-generated carriers to transfer into the semiconductor film from the at least one semiconductor nanostructure. A second apparatus includes: a semimetal film; and at least one semiconductor nanostructure, including a heterojunction, configured to generate carrier pairs in the semimetal film via resonant energy transfer, and configured to generate an external electric field for separating the generated carrier pairs in the semimetal film.

Abstract: Apparatus and methods are provided. A first apparatus includes: a semiconductor film; and at least one semiconductor nanostructure, including a heterojunction, configured to modulate the conductivity of the semiconductor film by causing photo-generated carriers to transfer into the semiconductor film from the at least one semiconductor nanostructure. A second apparatus includes: a semimetal film; and at least one semiconductor nanostructure, including a heterojunction, configured to generate carrier pairs in the semimetal film via resonant energy transfer, and configured to generate an external electric field for separating the generated carrier pairs in the semimetal film.

Abstract: A microcavity-controlled two-dimensional carbon lattice structure device selectively modifies to reflect or to transmit, or emits, or absorbs, electromagnetic radiation depending on the wavelength of the electromagnetic radiation. The microcavity-controlled two-dimensional carbon lattice structure device employs a graphene layer or at least one carbon nanotube located within an optical center of a microcavity defined by a pair of partial mirrors that partially reflect electromagnetic radiation. The spacing between the mirror determines the efficiency of elastic and inelastic scattering of electromagnetic radiation inside the microcavity, and hence, determines a resonance wavelength of electronic radiation that is coupled to the microcavity. The resonance wavelength is tunable by selecting the dimensional and material parameters of the microcavity. The process for manufacturing this device is compatible with standard complementary metal oxide semiconductor (CMOS) manufacturing processes.

Abstract: An apparatus including first and second layers of electrically conductive material separated by a layer of electrically insulating material, wherein one or both layers of electrically conductive material include graphene, and wherein the apparatus is configured such that electrons are able to tunnel from the first layer of electrically conductive material through the layer of electrically insulating material to the second layer of electrically conductive material.

Abstract: A microcavity-controlled two-dimensional carbon lattice structure device selectively modifies to reflect or to transmit, or emits, or absorbs, electromagnetic radiation depending on the wavelength of the electromagnetic radiation. The microcavity-controlled two-dimensional carbon lattice structure device employs a graphene layer or at least one carbon nanotube located within an optical center of a microcavity defined by a pair of partial mirrors that partially reflect electromagnetic radiation. The spacing between the mirror determines the efficiency of elastic and inelastic scattering of electromagnetic radiation inside the microcavity, and hence, determines a resonance wavelength of electronic radiation that is coupled to the microcavity. The resonance wavelength is tunable by selecting the dimensional and material parameters of the microcavity. The process for manufacturing this device is compatible with standard complementary metal oxide semiconductor (CMOS) manufacturing processes.

Abstract: Partially or fully saturated doped graphene materials are found to be superconducting. The saturation is with hydrogen or halogen. Doping is performed by substitution of carbon atoms or by applying an electric field. Diamond nano-rods are also found to be superconducting. These materials can be used in electronic devices having a gate.

Abstract: Provided is a multi-structure nanowire in which silicon nanowires are formed at both ends of a compound semi-conductor nanorod, and a method of manufacturing the multi-structure nanowire. The method includes providing a compound semiconductor nanorod; forming metal catalyst tips on both ends of the compound semiconductor nanorod; and growing silicon nanowires on both ends of the compound semiconductor nanorod where the metal catalyst tips are formed.

Abstract: Methods and systems for creating a material with nanomaterials attached are provided. The material used may be flexible. The material used may also be transparent. Also, the method and system disclosed may be performed at room temperature. The nanomaterials located on the material may be conductive or semi-conductive. Methods for creating the material and some general uses for the material may also be provided.

Abstract: Systems and methods are provided to improve the performance of electronic and optoelectronic devices made using organic semiconductor processing technology. An ink-jet device dispenses an organic composite mixture onto a substrate. The mixture includes a semiconducting polymer and nanomaterials dispersed into an organic solvent. The type of solvent used preferably achieves effective dispersion of the polymer and nanomaterials in the solvent to minimize the occurrence of clogging of the ink-jet nozzles. The range of nanomaterials include, but are not limited to, organic and inorganic, single or multi-walled nanotubes, nanowires, nanodots, quantum dots, nanorods, nanocrystals, nanotetrapods, nanotripods, nanobipods, nanoparticles, nanosaws, nanosprings, nanoribbons, any branched nanostructure, and any mixture of these nanoshaped materials. The nanostructures can be aligned on the substrate to improve the carrier mobility in the organic semiconductors.