Patents by Inventor Andrea C. Scuderi

Andrea C. Scuderi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS OF MAKING THIN FILM TRANSISTORS COMPRISING ZINC-OXIDE-BASED SEMICONDUCTOR MATERIALS
    Publication number: 20100120197
    Abstract: A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300° C. during fabrication.
    Type: Application
    Filed: January 20, 2010
    Publication date: May 13, 2010
    Inventors: David H. Levy, Andrea C. Scuderi, Lyn M. Irving
  • Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
    Patent number: 7691666
    Abstract: A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300° C. during fabrication.
    Type: Grant
    Filed: June 16, 2005
    Date of Patent: April 6, 2010
    Assignee: Eastman Kodak Company
    Inventors: David H. Levy, Andrea C. Scuderi, Lyn M. Irving
  • Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
    Patent number: 7402506
    Abstract: A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300° C. during fabrication.
    Type: Grant
    Filed: June 16, 2005
    Date of Patent: July 22, 2008
    Assignee: Eastman Kodak Company
    Inventors: David H. Levy, Andrea C. Scuderi, Lyn M. Irving