Abstract: System for generating a pulsed signal of the ultra wideband type, comprising a device for direct digital frequency synthesis (DDS) comprising a phase accumulator (ACCP) able to deliver at a first frequency (Fclk) phases coded on i bits and spaced apart by a phase increment (?p) differing by a power of two and situated in the vicinity of 2i-1, processing means (MT) able to receive said phases and arranged so as to deliver an amplitude-modulated output signal (SG) whose envelope exhibits a succession of regions respectively delimited by zones of zero amplitude (ZA, ZB), each amplitude-modulated signal part situated in one of said regions forming a pulse of the ultra wideband type (IMP) whose central frequency is equal to said first frequency and whose width depends on the value of the phase increment, and control means (MC) able to regulate the operation of the digital synthesis device so as to selectively deliver one or more pulses of the ultra wideband type.

Abstract: A filter with coupled resonator having a substrate; an acoustic mirror intended to support acoustic resonators, and to isolate these resonators from the substrate; a first structure with an upper resonator and a lower resonator coupled to one another through at least one layer of acoustic coupling; a second structure with an upper resonator and a lower resonator coupled to one another through at least one layer of acoustic coupling; the lower resonators of the first and second structure having the same electrodes. The first and second structures are connected via a fifth resonator for which electrodes and the piezoelectric layer of the lower resonators are of the first and second structure.

Abstract: An electronic circuit includes several (at least two) oscillating and/or resonant devices. The circuit uses a measuring device to measure the phase noise of one of the two oscillating/resonant devices. This measuring device is integrated on a chip on which the oscillating/resonant device to be measured is also integrated. The circuits and methods described find application in the area of radiofrequency/high frequency electronics RF/HF, in particular adapted to general public applications in mobile communication systems and/or to metrology.

Abstract: A bulk acoustic wave resonator has an adjustable resonance frequency. A piezoelectric element is provided having first and second electrodes. A switching element is provided in the form of a MEMS structure which is deformable between a first and second position. The switching element forms an additional electrode that is selectively disposed on top of, and in contact with, one of the first and second electrodes. This causes a total thickness of the electrode of the resonator to be changed resulting in a modification of the resonance frequency of the resonator.

Abstract: A filter with coupled resonator having a substrate; an acoustic mirror intended to support acoustic resonators, and to isolate these resonators from the substrate; a first structure with an upper resonator and a lower resonator coupled to one another through at least one layer of acoustic coupling; a second structure with an upper resonator and a lower resonator coupled to one another through at least one layer of acoustic coupling; the lower resonators of the first and second structure having the same electrodes. The first and second structures are connected via a fifth resonator for which electrodes and the piezoelectric layer of the lower resonators are of the first and second structure.

Abstract: An electronic circuit includes several (at least two) oscillating and/or resonant devices. The circuit uses a measuring device to measure the phase noise of one of the two oscillating/resonant devices. This measuring device is integrated on a chip on which said oscillating/resonant device to be measured is also integrated. The circuits and methods described find application in the area of radiofrequency/high frequency electronics RF/HF, in particular adapted to general public applications in mobile communication systems and/or to metrology.

Abstract: A filtering circuit based on a lattice structure comprising a first and a second input and a first and second output. The circuit further comprises two series impedance and two parallel impedance which each comprises an acoustic resonator associated with two inductive and capacitive components which can be adjusted by a first control value. The second and fourth impedance comprise each an acoustic resonator associated to two inductive and capacitive components which are adjustable by means of a second control value. A control circuit generates the two control values which simultaneously comprise a common mode potential and a differential mode potential which allows the emergence of first and second pass bands which are usable for realizing two different bandpass filters.

Abstract: An electronic circuit includes a substrate. A capacitor and at least one semiconductor component are supported by a surface of the substrate. A substantially planar screen, oriented parallel to the surface of the substrate and made of metallic material, is placed between the capacitor and the semiconductor component. Preferably, the semiconductor component is placed in proximity to the surface of the substrate and several superposed layers of insulating material cover the surface of the substrate and the semiconductor component. The capacitor is then placed within at least one layer of insulating material above the semiconductor component, and the screen is placed within an intermediate layer of insulating material between the layer incorporating the capacitor and the surface of the substrate.

Abstract: An electronic circuit comprises a substrate (100), a capacitor (11) and at least one semiconductor component (10) which are supported by a surface (S) of the substrate. A substantially plane screen (12), parallel to the surface of the substrate and made of metallic material, is furthermore placed between the capacitor and the semiconductor component. Preferably, the semiconductor component is placed in proximity to the surface (S) of the substrate and several superposed layers (1-6) of insulating material cover the surface of the substrate and the semiconductor component. The capacitor is then placed within at least one layer (5) of insulating material above the semiconductor component, and the screen (12) is placed within an intermediate layer (4) of insulating material between the layer incorporating the capacitor and the surface (S) of the substrate.