Patents by Inventor Andrea Cattaneo
Andrea Cattaneo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145253Abstract: A device includes a thinned semiconductor substrate having a first side and a second side opposite to the first side; and at least one radio frequency device at the first side, wherein the second side of the thinned semiconductor substrate is processed to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device through Bosch etchinType: ApplicationFiled: January 9, 2024Publication date: May 2, 2024Inventors: Hans Taddiken, Christian Butschkow, Andrea Cattaneo, Henning Feick, Dominik Heiss, Christoph Kadow, Uwe Seidel, Valentyn Solomko, Anton Steltenpohl
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Publication number: 20240123142Abstract: A device for subcutaneous delivery of a medicament includes a delivery module to house a cartridge containing a medicament to be delivered to a patient via a needle and a control module coupled to the delivery module to house a control unit and a battery to power the control unit. The delivery module includes an application surface that contacts the patient's body and two opposite first gripping perimeter surfaces extending along a first direction parallel to the application surface and along a second direction perpendicular to the application surface and having substantially equal dimensions in the second direction. The control module includes two opposite second gripping perimeter surfaces extending along the first direction and along the second direction and having substantially equal dimensions in the second direction. The two first gripping perimeter surfaces and the two second gripping perimeter surfaces have substantially equal dimensions in the first direction.Type: ApplicationFiled: October 13, 2023Publication date: April 18, 2024Inventors: Mattia Cattaneo, Pasquale Cirulli, Paolo Degan, Andrea Giacomozzi, Paolo Golfetto, Tommaso Borghi, Gustavo de Souza Messias, Marco Pirinoli, Christian Riva, Nicola Bonserio, Ilaria Nicoli
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Patent number: 11948802Abstract: A device includes a thinned semiconductor substrate having a first side and a second side opposite to the first side; and at least one radio frequency device at the first side, wherein the second side of the thinned semiconductor substrate is processed to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device through Bosch etching.Type: GrantFiled: December 22, 2021Date of Patent: April 2, 2024Assignee: Infineon Technologies Dresden GmbH & Co. KGInventors: Hans Taddiken, Christian Butschkow, Andrea Cattaneo, Henning Feick, Dominik Heiss, Christoph Kadow, Uwe Seidel, Valentyn Solomko, Anton Steltenpohl
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Publication number: 20220115499Abstract: A device includes a thinned semiconductor substrate having a first side and a second side opposite to the first side; and at least one radio frequency device at the first side, wherein the second side of the thinned semiconductor substrate is processed to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device through Bosch etching.Type: ApplicationFiled: December 22, 2021Publication date: April 14, 2022Inventors: Hans Taddiken, Christian Butschkow, Andrea Cattaneo, Henning Feick, Dominik Heiss, Christoph Kadow, Uwe Seidel, Valentyn Solomko, Anton Steltenpohl
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Patent number: 11217453Abstract: A method includes providing a semiconductor substrate having a first side and a second side opposite to the first side, forming at least one radio frequency device at the first side; thinning the semiconductor substrate from the second side; and processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device.Type: GrantFiled: June 17, 2020Date of Patent: January 4, 2022Assignee: INFINEON TECHNOLOGIES DRESDEN GMBH & CO. KGInventors: Hans Taddiken, Christian Butschkow, Andrea Cattaneo, Henning Feick, Dominik Heiss, Christoph Kadow, Uwe Seidel, Valentyn Solomko, Anton Steltenpohl
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Patent number: 11139813Abstract: An RF switch includes serially coupled RF cells coupled between a first switch node and a second switch node, wherein each of the serially coupled RF cells include at least one transistor; and a varactor circuit coupled to at least one node of a transistor in an RF cell, and coupled between the RF cell and an adjacent RF cell, wherein the varactor circuit is configured for equalizing a voltage of the RF cell and a voltage of the adjacent RF cell during an off mode of the RF switch.Type: GrantFiled: September 22, 2020Date of Patent: October 5, 2021Assignee: INFINEON TECHNOLOGIES AGInventors: Andrea Cattaneo, Valentyn Solomko
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Patent number: 10931275Abstract: A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.Type: GrantFiled: May 12, 2020Date of Patent: February 23, 2021Assignee: INFINEON TECHNOLOGIES AGInventors: Semen Syroiezhin, Pablo Araujo Do Nascimento, Winfried Bakalski, Andrea Cattaneo, Jochen Essel, Oguzhan Oezdamar, Johannes Klaus Rimmelspacher, Valentyn Solomko, Danial Tayari, Andreas Wickmann
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Publication number: 20210043497Abstract: A method includes providing a semiconductor substrate having a first side and a second side opposite to the first side, forming at least one radio frequency device at the first side; thinning the semiconductor substrate from the second side; and processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device.Type: ApplicationFiled: June 17, 2020Publication date: February 11, 2021Inventors: Hans Taddiken, Christian Butschkow, Andrea Cattaneo, Henning Feick, Dominik Heiss, Christoph Kadow, Uwe Seidel, Valentyn Solomko, Anton Steltenpohl
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Patent number: 10804354Abstract: A radio frequency resistor element comprises a resistive polysilicon trace, an isolation component and a semiconductor substrate. The resistive polysilicon trace is located above the isolation component. The isolation component is laterally at least partially surrounded by a modified semiconductor region located above the semiconductor substrate and having a higher charge carrier recombination rate than the semiconductor substrate.Type: GrantFiled: March 23, 2018Date of Patent: October 13, 2020Assignee: INFINEON TECHNOLOGIES AGInventors: Hans Taddiken, Martin Bartels, Andrea Cattaneo, Henning Feick, Christian Kuehn, Anton Steltenpohl
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Publication number: 20200321957Abstract: A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.Type: ApplicationFiled: May 12, 2020Publication date: October 8, 2020Inventors: Semen Syroiezhin, Pablo Araujo Do Nascimento, Winfried Bakalski, Andrea Cattaneo, Jochen Essel, Oguzhan Oezdamar, Johannes Klaus Rimmelspacher, Valentyn Solomko, Danial Tayari, Andreas Wickmann
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Patent number: 10734987Abstract: A radio frequency, RF, switch device includes a plurality of switch units, wherein the switch units are coupled in series between a first series terminal and a second series terminal to establish a switchable RF path; and a plurality of ballasting capacitor units, wherein each ballasting capacitor unit is coupled in parallel to a respective switch unit, to provide a selectable capacitance in parallel to a signal path of the respective switch unit, wherein each ballasting capacitor unit includes at least one ballasting capacitor switch element to switch the capacitance of the ballasting capacitor unit between a first capacitance value and a second capacitance value, wherein the second capacitance value is larger than the first capacitance value.Type: GrantFiled: July 9, 2019Date of Patent: August 4, 2020Assignee: INFINEON TECHNOLOGIES AGInventors: Valentyn Solomko, Carsten Ahrens, Winfried Bakalski, Andrea Cattaneo, Bernd Schleicher
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Patent number: 10680599Abstract: A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.Type: GrantFiled: April 3, 2019Date of Patent: June 9, 2020Assignee: INFINEON TECHNOLOGIES AGInventors: Semen Syroiezhin, Pablo Araujo Do Nascimento, Winfried Bakalski, Andrea Cattaneo, Jochen Essel, Oguzhan Oezdamar, Johannes Klaus Rimmelspacher, Valentyn Solomko, Danial Tayari, Andreas Wickmann
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Publication number: 20200028504Abstract: A radio frequency, RF, switch device includes a plurality of switch units, wherein the switch units are coupled in series between a first series terminal and a second series terminal to establish a switchable RF path; and a plurality of ballasting capacitor units, wherein each ballasting capacitor unit is coupled in parallel to a respective switch unit, to provide a selectable capacitance in parallel to a signal path of the respective switch unit, wherein each ballasting capacitor unit includes at least one ballasting capacitor switch element to switch the capacitance of the ballasting capacitor unit between a first capacitance value and a second capacitance value, wherein the second capacitance value is larger than the first capacitance value.Type: ApplicationFiled: July 9, 2019Publication date: January 23, 2020Inventors: Valentyn Solomko, Carsten Ahrens, Winfried Bakalski, Andrea Cattaneo, Bernd Schleicher
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Patent number: 10333510Abstract: In accordance with an embodiment, a circuit includes an RF switch, a leakage compensation circuit having a bias port and a reference port, a replica resistor coupled between a reference node and the reference port of the leakage compensation circuit, and a bias resistor coupled between the bias port of the leakage compensation circuit and a load path of the RF switch. The leakage compensation circuit configured to mirror a current from the bias port to the reference port, and apply a voltage from the reference port to the bias port.Type: GrantFiled: July 7, 2017Date of Patent: June 25, 2019Assignee: INFINEON TEHCNOLOGIES AGInventors: Valentyn Solomko, Winfried Bakalski, Andrea Cattaneo, Bernd Schleicher, Anton Steltenpohl, Hans Taddiken, Danial Tayari
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Publication number: 20190013806Abstract: In accordance with an embodiment, a circuit includes an RF switch, a leakage compensation circuit having a bias port and a reference port, a replica resistor coupled between a reference node and the reference port of the leakage compensation circuit, and a bias resistor coupled between the bias port of the leakage compensation circuit and a load path of the RF switch. The leakage compensation circuit configured to mirror a current from the bias port to the reference port, and apply a voltage from the reference port to the bias port.Type: ApplicationFiled: July 7, 2017Publication date: January 10, 2019Inventors: Valentyn Solomko, Winfried Bakalski, Andrea Cattaneo, Bernd Schleicher, Anton Steltenpohl, Hans Taddiken, Danial Tayari
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Publication number: 20180286941Abstract: A radio frequency resistor element comprises a resistive polysilicon trace, an isolation component and a semiconductor substrate. The resistive polysilicon trace is located above the isolation component. The isolation component is laterally at least partially surrounded by a modified semiconductor region located above the semiconductor substrate and having a higher charge carrier recombination rate than the semiconductor substrate.Type: ApplicationFiled: March 23, 2018Publication date: October 4, 2018Inventors: Hans Taddiken, Martin Bartels, Andrea Cattaneo, Henning Feick, Christian Kuehn, Anton Steltenpohl