Abstract: A combined pumping system comprising a getter pump and an ion pump is described. The getter pump and the ion pump are mounted in series on a same flange and are respectively arranged on opposite sides thereof so that both getter and ion pumps conductance are maximized towards gas flux sources in a vacuum chamber in order to improve the vacuum level of the system.

Abstract: Getter alloys particularly suitable for hydrogen sorption are described. The getter alloys include a first element consisting of yttrium or a yttrium equivalent mixture, the first element forming at least 30% by atoms of the alloy. A method for removing hydrogen from devices which are sensitive to the presence thereof and hydrogen-sensitive devices which contain the described getter alloys are also described.

Abstract: A combined pumping system comprising a getter pump and an ion pump is described. The getter pump and the ion pump are mounted in series on a same flange and are respectively arranged on opposite sides thereof so that both getter and ion pumps conductance are maximized towards gas flux sources in a vacuum chamber in order to improve the vacuum level of the system.

Abstract: A process is provided for the formation of miniaturized getter deposits, comprising the steps of forming a layer of a photosensitive polymeric material on a support; selectively exposing the polymeric layer in order to cause a chemical modification in a portion of the polymeric layer; removing with a first solvent only one of the previously exposed or the not previously exposed portions of the polymeric layer, thus forming cavities in the polymeric layer; forming a thin layer of a getter material by cathodic deposition at the bottom of the cavity and on the residual polymer; and removing with a second solvent the polymer portion not removed by the first solvent, leaving at least a getter material deposit on the support surface.

Abstract: A combined pumping system (10) comprises a getter pump (12) and an ion pump (13). The getter and ion pumps (12, 13) are mounted on a same flange (11) and are arranged on the same side of said flange (11) at two different points thereof.

Abstract: A lithography apparatus (10) is disclosed using extreme UV radiation and having a hydrocarbon sorbing member comprising a getter material arranged in the process chamber (13) of said apparatus.

Abstract: Getter multilayer structures are disclosed, embodiments of which include at least a layer of a non-evaporable getter alloy having a low activation temperature over a layer of a different non-evaporable getter material having high specific surface area, both preferably obtained by cathodic deposition. The multilayer NEG structures exhibit better gas sorbing characteristics and lower activation temperature lower than those of deposits made up of a single material. A process for manufacturing such structures includes depositing a first, high surface area NEG film on a support, and then depositing a thin over layer of low activation NEG film.

Abstract: A flexible multi-layer getter with a gas-permeable layer covering a gas reservoir layer. In an embodiment, the gas-permeable layer covers part of the gas reservoir layer. In another embodiment, a barrier covers part of the gas reservoir layer. The barrier may include a foil substrate, a passivation layer, or a gas-permeable layer.

Abstract: Getter multilayer structures are disclosed, embodiments of which include at least a layer of a non-evaporable getter alloy having a low activation temperature over a layer of a different non-evaporable getter material having high specific surface area, both preferably obtained by cathodic deposition. The multilayer NEG structures exhibit better gas sorbing characteristics and lower activation temperature lower than those of deposits made up of a single material. A process for manufacturing such structures includes depositing a first, high surface area NEG film on a support, and then depositing a thin over layer of low activation NEG film.

Abstract: Getter multilayer structures are disclosed, embodiments of which include at least a layer of a non-evaporable getter alloy having a low activation temperature over a layer of a different non-evaporable getter material having high specific surface area, both preferably obtained by cathodic deposition. The multilayer NEG structures exhibit better gas sorbing characteristics and lower activation temperature lower than those of deposits made up of a single material. A process for manufacturing such structures includes depositing a first, high surface area NEG film on a support, and then depositing a thin over layer of low activation NEG film.

Abstract: A process is provided for the formation of miniaturized getter deposits, comprising the steps of forming a layer of a photosensitive polymeric material on a support; selectively exposing the polymeric layer in order to cause a chemical modification in a portion of the polymeric layer; removing with a first solvent only one of the previously exposed or the not previously exposed portions of the polymeric layer, thus forming cavities in the polymeric layer; forming a thin layer of a getter material by cathodic deposition at the bottom of the cavity and on the residual polymer; and removing with a second solvent the polymer portion not removed by the first solvent, leaving at least a getter material deposit on the support surface.

Abstract: Getter multilayer structures are disclosed, embodiments of which include at least a layer of a non-evaporable getter alloy having a low activation temperature over a layer of a different non-evaporable getter material having high specific surface area, both preferably obtained by cathodic deposition. The multilayer NEG structures exhibit better gas sorbing characteristics and lower activation temperature lower than those of deposits made up of a single material. A process for manufacturing such structures includes depositing a first, high surface area NEG film on a support, and then depositing a thin over layer of low activation NEG film.

Abstract: A method for reducing the loss of particles from the surface of porous getter bodies is taught herein. The method consists in producing on the surface of the porous getter a thin layer of a metal or metal alloy with a deposition technique selected among the deposition of materials from arc generated plasma, ionic beam deposition and cathodic deposition. The deposition technique allows for granular or columnar surface of the covering material but still allowing access to the surface of the getter material, resulting in a reduced getter particle loss.

Abstract: A getter device is shaped like a substrate used in a deposition process. Embodiments of the device include a powdered getter material coated onto one or both sides of a support with a narrow rim portion left uncoated so that the device can be manipulated by automatic handling equipment. A method for using the getter device includes providing a vacuum chamber and automatic handling equipment, loading the device into the chamber, reducing the chamber pressure to a desired value by using the getter device in conjunction with an external pump, removing the getter device and replacing it with a substrate, and depositing a thin film on the substrate. The getter device can be in an activated state when loaded into the chamber, or it can be activated after being loaded by employing heating equipment ordinarily used to heat substrates placed in the chamber. The getter material of the device may also be activated in a separate activation chamber before the getter device is loaded into the vacuum chamber.

Abstract: A getter device is shaped like a substrate used in a deposition process. Embodiments of the device include a powdered getter material coated onto one or both sides of a support with a narrow rim portion left uncoated so that the device can be manipulated by automatic handling equipment. A method for using the getter device includes providing a vacuum chamber and automatic handling equipment, loading the device into the chamber, reducing the chamber pressure to a desired value by using the getter device in conjunction with an external pump, removing the getter device and replacing it with a substrate, and depositing a thin film on the substrate. The getter device can be in an activated state when loaded into the chamber, or it can be activated after being loaded by employing heating equipment ordinarily used to heat substrates placed in the chamber. The getter material of the device may also be activated in a separate activation chamber before the getter device is loaded into the vacuum chamber.

Abstract: A method for reducing the loss of particles from the surface of porous getter bodies is taught herein. The method consists in producing on the surface of the porous getter a thin layer of a metal or metal alloy with a deposition technique selected among the deposition of materials from arc generated plasma, ionic beam deposition and cathodic deposition. The deposition technique allows for granular or columnar surface of the covering material but still allowing access to the surface of the getter material, resulting in a reduced getter particle loss.

Abstract: Getter multilayer structures are disclosed, embodiments of which include at least a layer of a non-evaporable getter alloy having a low activation temperature over a layer of a different non-evaporable getter material having high specific surface area, both preferably obtained by cathodic deposition. The multilayer NEG structures exhibit better gas sorbing characteristics and lower activation temperature lower than those of deposits made up of a single material. A process for manufacturing such structures includes depositing a first, high surface area NEG film on a support, and then depositing a thin over layer of low activation NEG film.

Abstract: A method for reducing the loss of particles from the surface of porous getter bodies is taught herein. The method consists in producing on the surface of the porous getter a thin layer of a metal or metal alloy with a deposition technique selected among the deposition of materials from arc generated plasma, ionic beam deposition and cathodic deposition. The deposition technique allows for granular or columnar surface of the covering material but still allowing access to the surface of the getter material, resulting in a reduced getter particle loss.

Abstract: A getter device is shaped like a substrate used in a deposition process. Embodiments of the device include a powdered getter material coated onto one or both sides of a support with a narrow rim portion left uncoated so that the device can be manipulated by automatic handling equipment. A method for using the getter device includes providing a vacuum chamber and automatic handling equipment, loading the device into the chamber, reducing the chamber pressure to a desired value by using the getter device in conjunction with an external pump, removing the getter device and replacing it with a substrate, and depositing a thin film on the substrate. The getter device can be in an activated state when loaded into the chamber, or it can be activated after being loaded by employing heating equipment ordinarily used to heat substrates placed in the chamber. The getter material of the device may also be activated in a separate activation chamber before the getter device is loaded into the vacuum chamber.

Abstract: A method for reducing the loss of particles from the surface of porous getter bodies is taught herein. The method consists in producing on the surface of the porous getter a thin layer of a metal or metal alloy with a deposition technique selected among the deposition of materials from arc generated plasma, ionic beam deposition and cathodic deposition. The deposition technique allows for granular or columnar surface of the covering material but still allowing access to the surface of the getter material, resulting in a reduced getter particle loss.