Abstract: A double photodiode electromagnetic radiation sensor device including a substrate, a first integrated photodiode (PD1), a second integrated photodiode (PD2), and more than one metal contact. The substrate may be within a first semiconductor material that defines a first face and a second face. The PD1 may include a first doped region extending to the second face and a “n-” type doping. The PD1 may further include a second doped region extending to the second face having a “p+” type doping. The PD2 may include the first doped region, and a layer in a second semiconductor material placed on the second face in contact with the first doped region defining a third face. The PD2 may yet further include a doped layer in the second semiconductor material having a “p+” type doping and overlapping the third face.