Abstract: Method for inspecting an industrial equipment in an operating space, including the following steps: receiving image data, detected by a measurement device and representing an image including at least one component of the industrial equipment; processing the image data by means of machine vision algorithms to identify a control parameter; processing image data and determining a dimensional measurement, using machine vision algorithms, corresponding to the control parameter identified; formulating and sending a read request to a memory, based on the control parameter identified; sending an allowable maintenance value, representing an allowable value of the control parameter identified; comparing between the allowable maintenance value and the dimensional measurement; generating a diagnosis, based on the comparison between the allowable maintenance value and the dimensional measurement.

Abstract: Described is a safety device for a self-propelled industrial vehicle movable in an operating space, including: a measuring group, configured to detect depth data, representative of a distance, from the measuring group, of bodies arranged in the operating space; an additional measuring group, configured to detect image data, representative of an image of bodies arranged in the operating space; a control unit, connected to the measuring unit and to the additional measuring unit to receive the depth data and the image data. The control unit is programmed to compare the image data with reference image data, for classifying the bodies into predetermined categories. The control unit is programmed for associating to each body a corresponding predetermined category and a corresponding value of distance from the self-propelled vehicle.

Abstract: Vertical devices and methods of forming the same are provided. One example method of forming a vertical device can include forming a trench in a semiconductor structure, and partially filling the trench with an insulator material. A dielectric material is formed over the insulator material. The dielectric material is modified into a modified dielectric material having an etch rate greater than an etch rate of the insulator material. The modified dielectric material is removed from the trench via a wet etch.

Abstract: Vertical devices and methods of forming the same are provided. One example method of forming a vertical device can include forming a trench in a semiconductor structure, and partially filling the trench with an insulator material. A dielectric material is formed over the insulator material. The dielectric material is modified into a modified dielectric material having an etch rate greater than an etch rate of the insulator material. The modified dielectric material is removed from the trench via a wet etch.

Abstract: Vertical devices and methods of forming the same are provided. One example method of forming a vertical device can include forming a trench in a semiconductor structure, and partially filling the trench with an insulator material. A dielectric material is formed over the insulator material. The dielectric material is modified into a modified dielectric material having an etch rate greater than an etch rate of the insulator material. The modified dielectric material is removed from the trench via a wet etch.

Abstract: Vertical devices and methods of forming the same are provided. One example method of forming a vertical device can include forming a trench in a semiconductor structure, and partially filling the trench with an insulator material. A dielectric material is formed over the insulator material. The dielectric material is modified into a modified dielectric material having an etch rate greater than an etch rate of the insulator material. The modified dielectric material is removed from the trench via a wet etch.

Abstract: Vertical devices and methods of forming the same are provided. One example method of forming a vertical device can include forming a trench in a semiconductor structure, and partially filling the trench with an insulator material. A dielectric material is formed over the insulator material. The dielectric material is modified into a modified dielectric material having an etch rate greater than an etch rate of the insulator material. The modified dielectric material is removed from the trench via a wet etch.

Abstract: Vertical devices and methods of forming the same are provided. One example method of forming a vertical device can include forming a trench in a semiconductor structure, and partially filling the trench with an insulator material. A dielectric material is formed over the insulator material. The dielectric material is modified into a modified dielectric material having an etch rate greater than an etch rate of the insulator material. The modified dielectric material is removed from the trench via a wet etch.

Abstract: A process for purifying lactulose from other carbohydrates, in particular from lactose and galactose, by passing a lactulose syrup through one or more columns containing a bifunctionalized boron resin of the type: ##STR1## in which .circle.P is a polyacrylic or polystyrene polymer matrix and R, R.sup.1, R.sup.2, R.sup.3, X are as defined in the text.By passing the lactulose solution containing carbohydrate impurities through a boron resin (I) of polyacrylic matrix, the lactulose is selectively retained and is subsequently released by elution with an acid solution.The small quantity of galactose which may still be contained in the lactulose-enriched solution can be removed by passing said solution through a boron resin (I) of polystyrene matrix, which selectively retains the galactose.

Abstract: Stable boron resins of high selective absorbent power and a relative production process; said boron resins are constituted by a polyacrylic matrix bifunctionalized with quaternary ammonium groups and with alkylphenylboric groups in accordance with general formula (I) ##STR1## in which .circle.P , R, R.sup.1, R.sup.2, R.sup.3, X are as defined in the text.The resin (I) is prepared by condensing an amino resin with halophenylboroxine or with haloalkylphenylboroxine.The resin of formula (I) can be used for purifying lactulose.

Abstract: A process for preparing alpha-L-aspartyl-L-phenylalanine alkyl esters from L-aspartic acid, of which the amino group is protected by bonding it to a 3,5-dimethoxy-.alpha.,.alpha.-dimethyl-benzyloxycarbonyl group, then transforming this intermediate into the corresponding anhydride by means of a dehydrating agent, then reacting the anhydride with L-phenylalanine alkyl ester, and finally eliminating the protective group by the action of U.V. radiation.

Abstract: Stable boron resins of high selective absorbent power and a relative production process; said boron resins are constituted by a polyacrylic matrix bifunctionalized with quaternary ammonium groups and with alkylphenylboric groups in accordance with general formula (I) ##STR1## in which P , R, R.sup.1, R.sup.2, R.sup.3, X are as defined in the text. The resin (I) is prepared by condensing an amino resin with halophenylboroxine or with haloalkylphenylboroxine.The resin of formula (I) can be used for purifying lactulose.