Abstract: Systems, methods, and apparatus related to memory devices. In one approach, a vertical three-dimensional cross-point memory device uses digit line decoders that include, on the digit line side of memory cells, a current limiter and sensing circuit configured to control program current in either of positive or negative program polarities, as selected by a controller. Two current limiters are each used on the digit line side of each memory cell. A negative polarity current limiter is used for pull-up, and a positive polarity current limiter is used for pull-down. A negative polarity sensing circuit is used between the respective digit line decoder and a positive supply voltage. A positive polarity sensing circuit is used between the respective digit line decoder and a negative supply voltage. The current limiter and sensing circuit pair of the same polarity is coupled to each digit line decoder based on the selected program polarity.

Abstract: Methods, systems, and devices for discharge current mitigation in a memory array are described. Access lines of a memory array may be divided into discrete segments, with each segment coupled with a driver for the access line by one or more vias respective to the segment. For example, a first segment of an access line may be coupled with a first set of memory cells, a second segment of the access line may be coupled with a second set of memory cells, and a driver may be coupled to the first segment by a first via and to the second segment by a second via. To access a memory cell in either the first set or the second, both the first segment of the access line and the second segment of the access line may be activated together by the common driver.

Abstract: The disclosed technology generally relates to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. Line stacks are formed, including a storage material line disposed over lower a conductive line. Upper conductive lines are formed over and crossing the line stacks, exposing portions of the line stacks between adjacent upper conductive lines. After forming the upper conductive lines, storage elements are formed at intersections between the lower conductive lines and the upper conductive lines by removing storage materials from exposed portions of the line stacks, such that each storage element is laterally surrounded by spaces. A continuous sealing material laterally surrounds each of the storage elements.

Abstract: Methods, systems, and devices for discharge current mitigation in a memory array are described. Access lines of a memory array may be divided into discrete segments, with each segment coupled with a driver for the access line by one or more vias respective to the segment. For example, a first segment of an access line may be coupled with a first set of memory cells, a second segment of the access line may be coupled with a second set of memory cells, and a driver may be coupled to the first segment by a first via and to the second segment by a second via. To access a memory cell in either the first set or the second, both the first segment of the access line and the second segment of the access line may be activated together by the common driver.

Abstract: The present invention provides methods of identifying and distinguishing different types of nerve cells in ex vivo cell culture, the method comprising the steps of: a) culturing somato-sensory nerve cells ex vivo, b) loading the nerve cells with a calcium, sodium, or voltage-sensitive indicator or expressing a genetically encoded calcium, sodium, or voltage-sensitive indicator, c) pulsing the nerve cells with an electrical train of bipolar square waves at two different voltages and two different frequencies; wherein the first voltage is 10 V/cm or less (low voltage) and the second voltage is between 12 and 20 V/cm (high voltage); and wherein the first frequency is 5 Hz or less (low frequency) and the second frequency is between 15 and 20 Hz (high frequency), and d) detecting activation of the nerve cell by measuring the changes in the signal intensity of the indicator, wherein low voltage and low frequency activation indicates a first type of cell and activation detected only at high voltage indicates a secon

Abstract: The disclosed technology generally relates to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. Line stacks are formed, including a storage material line disposed over lower a conductive line. Upper conductive lines are formed over and crossing the line stacks, exposing portions of the line stacks between adjacent upper conductive lines. After forming the upper conductive lines, storage elements are formed at intersections between the lower conductive lines and the upper conductive lines by removing storage materials from exposed portions of the line stacks, such that each storage element is laterally surrounded by spaces. A continuous sealing material laterally surrounds each of the storage elements.

Abstract: The disclosed technology generally relates to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. Line stacks are formed, including a storage material line disposed over lower a conductive line. Upper conductive lines are formed over and crossing the line stacks, exposing portions of the line stacks between adjacent upper conductive lines. After forming the upper conductive lines, storage elements are formed at intersections between the lower conductive lines and the upper conductive lines by removing storage materials from exposed portions of the line stacks, such that each storage element is laterally surrounded by spaces. A continuous sealing material laterally surrounds each of the storage elements.

Abstract: The disclosed technology generally relates to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. Line stacks are formed, including a storage material line disposed over lower a conductive line. Upper conductive lines are formed over and crossing the line stacks, exposing portions of the line stacks between adjacent upper conductive lines. After forming the upper conductive lines, storage elements are formed at intersections between the lower conductive lines and the upper conductive lines by removing storage materials from exposed portions of the line stacks, such that each storage element is laterally surrounded by spaces. A continuous sealing material laterally surrounds each of the storage elements.

Abstract: The disclosed technology generally relates to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. Line stacks are formed, including a storage material line disposed over lower a conductive line. Upper conductive lines are formed over and crossing the line stacks, exposing portions of the line stacks between adjacent upper conductive lines. After forming the upper conductive lines, storage elements are formed at intersections between the lower conductive lines and the upper conductive lines by removing storage materials from exposed portions of the line stacks, such that each storage element is laterally surrounded by spaces. A continuous sealing material laterally surrounds each of the storage elements.

Abstract: The present invention provides methods of identifying and distinguishing different types of nerve cells in ex vivo cell culture, the method comprising the steps of: a) culturing somato-sensory nerve cells ex vivo, b) loading the nerve cells with a calcium, sodium, or voltage-sensitive indicator or expressing a genetically encoded calcium, sodium, or voltage-sensitive indicator, c) pulsing the nerve cells with an electrical train of bipolar square waves at two different voltages and two different frequencies; wherein the first voltage is 10 V/cm or less (low voltage) and the second voltage is between 12 and 20 V/cm (high voltage); and wherein the first frequency is 5 Hz or less (low frequency) and the second frequency is between 15 and 20 Hz (high frequency), and d) detecting activation of the nerve cell by measuring the changes in the signal intensity of the indicator, wherein low voltage and low frequency activation indicates a first type of cell and activation detected only at high voltage indicates a secon

Abstract: The disclosed technology generally relates to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. Line stacks are formed, including a storage material line disposed over lower a conductive line. Upper conductive lines are formed over and crossing the line stacks, exposing portions of the line stacks between adjacent upper conductive lines. After forming the upper conductive lines, storage elements are formed at intersections between the lower conductive lines and the upper conductive lines by removing storage materials from exposed portions of the line stacks, such that each storage element is laterally surrounded by spaces. A continuous sealing material laterally surrounds each of the storage elements.

Abstract: The disclosed technology generally relates to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. Line stacks are formed, including a storage material line disposed over lower a conductive line. Upper conductive lines are formed over and crossing the line stacks, exposing portions of the line stacks between adjacent upper conductive lines. After forming the upper conductive lines, storage elements are formed at intersections between the lower conductive lines and the upper conductive lines by removing storage materials from exposed portions of the line stacks, such that each storage element is laterally surrounded by spaces. A continuous sealing material laterally surrounds each of the storage elements.

Abstract: Embodiments disclosed herein may relate to forming a storage component comprising a phase change material and a shunt relative to amorphous portions of the phase change material.

Abstract: The disclosed technology generally relates to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. Line stacks are formed, including a storage material line disposed over lower a conductive line. Upper conductive lines are formed over and crossing the line stacks, exposing portions of the line stacks between adjacent upper conductive lines. After forming the upper conductive lines, storage elements are formed at intersections between the lower conductive lines and the upper conductive lines by removing storage materials from exposed portions of the line stacks, such that each storage element is laterally surrounded by spaces. A continuous sealing material laterally surrounds each of the storage elements.

Abstract: The present invention provides a filtration chamber comprising a microfabricated filter enclosed in a housing, wherein the surface of said filter and/or the inner surface of said housing are modified by vapor deposition, sublimation, vapor-phase surface reaction, or particle sputtering to produce a uniform coating; and a method for separating cells of a fluid sample, comprising: a) dispensing a fluid sample into the filtration chamber disclosed herein; and b) providing fluid flow of the fluid sample through the filtration chamber, wherein components of the fluid sample flow through or are retained by the filter based on the size, shape, or deformability of the components.

Abstract: Embodiments disclosed herein may relate to forming a storage component comprising a phase change material and a shunt relative to amorphous portions of the phase change material.

Abstract: Embodiments disclosed herein may relate to forming a storage component comprising a phase change material and a shunt relative to amorphous portions of the phase change material.

Abstract: Provided are methods and compositions for isolating and detecting rare cells from a biological sample containing other types of cells, particularly including debulking that uses a microfabricated filter for filtering samples. The enriched rare cells can be used in a downstream process such as identification, characterization or growth in culture, or in other ways. Also included is a method of determining tumor aggressiveness or the number or proportion of cancer cells in the enriched sample by detecting telomerase activity, nucleic acid or expression after enrichment of rare cells. Also provided is an efficient, rapid method to specifically remove red and white blood cells from a biological sample containing at least one of the cell types, leading to enrichment of rare target cells including circulating tumor (CTC), stromal, mesenchymal, endothelial, fetal, stem, or non-hematopoietic cells et cetera from a blood sample.

Abstract: Embodiments disclosed herein may relate to forming a storage component comprising a phase change material and a shunt relative to amorphous portions of the phase change material.

Abstract: The present invention provides methods and compositions for isolating and detecting rare cells from a biological sample containing other types of cells. In particular, the present invention includes a debulking step that uses a microfabricated filters for filtering fluid samples and the enriched rare cells can be used in a downstream process such as identifies, characterizes or even grown in culture or used in other ways. The invention also include a method of determining the aggressiveness of the tumor or of the number or proportion of cancer cells in the enriched sample by detecting the presence or amount of telomerase activity or telomerase nucleic acid or telomerase expression after enrichment of rare cells. This invention further provides an efficient and rapid method to specifically remove red blood cells as well as white blood cells from a biological sample.