Patents by Inventor Andrea Knigge
Andrea Knigge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11677214Abstract: The present disclosure relates to a diode laser having reduced beam divergence. Some implementations reduce a beam divergence in the far field by means of a deliberate modulation of the real refractive index of the diode laser. An area of the diode laser (e.g., the injection zone), may be structured with different materials having different refractive indices. In some implementations, the modulation of the refractive index makes it possible to excite a supermode, the field of which has the same phase (in-phase mode) under the contacts. Light, which propagates under the areas of a lower refractive index, obtains a phase shift of ? after passing through the index-guiding trenches. Consequently, the in-phase mode is supported and the formation of the out-of-phase mode is prevented. Consequently, the laser field can, in this way, be stabilized even at high powers such that only a central beam lobe remains in the far field.Type: GrantFiled: March 31, 2021Date of Patent: June 13, 2023Assignee: FERDINAND-BRAUN-INSTITUT GGMBH, LEIBNIZ-INSTITUT FÜR HÖCHSTFREQUENZTECHNIKInventors: Anissa Zeghuzi, Jan-Philipp Koester, Hans Wenzel, Heike Christopher, Andrea Knigge
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Publication number: 20220115835Abstract: The present invention relates to a device for generating laser radiation. An object of the present invention is to indicate a laser diode which simultaneously has a high degree of efficiency and a low degree of far field divergence. The diode laser according to the invention comprises a current barrier (5), characterized in that the current barrier (5) extends along a third axis (X), wherein the current barrier (5) has at least one opening, and a first width (W1) of the opening of the current barrier (5) along the third axis (X) is smaller than a second width (W2) of the metal p-contact (8) along the third axis (X).Type: ApplicationFiled: January 9, 2020Publication date: April 14, 2022Inventors: Gotz EEBERT, Hans WENZEL, Steffen KNIGGE, Christian Dominik MARTIN, Andre MAASDORFF, Pietro DELLA CASA, Andrea KNIGGE, Paul CRUMP
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Publication number: 20210305772Abstract: The present disclosure relates to a diode laser having reduced beam divergence. Some implementations reduce a beam divergence in the far field by means of a deliberate modulation of the real refractive index of the diode laser. An area of the diode laser (e.g., the injection zone), may be structured with different materials having different refractive indices. In some implementations, the modulation of the refractive index makes it possible to excite a supermode, the field of which has the same phase (in-phase mode) under the contacts. Light, which propagates under the areas of a lower refractive index, obtains a phase shift of ? after passing through the index-guiding trenches. Consequently, the in-phase mode is supported and the formation of the out-of-phase mode is prevented. Consequently, the laser field can, in this way, be stabilized even at high powers such that only a central beam lobe remains in the far field.Type: ApplicationFiled: March 31, 2021Publication date: September 30, 2021Inventors: Anissa Zeghuzi, Jan-Philipp Koester, Hans Wenzel, Heike Christopher, Andrea Knigge
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Patent number: 9431557Abstract: The present invention relates to a UV photodetector having a high sensitivity and a low dark current. The object of the present invention is to specify a UV photodetector that has a high sensitivity and a low dark current. According to the invention, the fingers of the first electrode structure and the fingers of the second electrode structure have a cover layer made of a second semiconducting material, wherein the cover layer is arranged on the absorber layer and directly contacts the absorber layer in the region of the fingers, and the first semiconducting material and the second semiconducting material are designed in such a manner that a two-dimensional electron gas (2DEG) is formed at the boundary layer between the absorber layer and the cover layer in the region of the fingers.Type: GrantFiled: April 26, 2012Date of Patent: August 30, 2016Assignee: Forschungsverbung Berlin E.V.Inventors: Andrea Knigge, Markus Weyers, Hans-Joachim Wurfl
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Patent number: 8824518Abstract: A the vertical-cavity surface-emitting laser includes a stripe-shaped active medium (10) having an emission maximum at a first wavelength (?1), wherein a first reflector (18) is arranged below the stripe-shaped active medium (10) and a second reflector (20) is arranged above the stripe-shaped active medium (10), with the first reflector (18) facing the second reflector (20), wherein the first reflector (18) and a second reflector (20) have a reflectivity maximum in the region of the first wavelength (?1), wherein a third reflector (12) and a fourth reflector (13) are each arranged on a side above or next to the stripe-shaped active medium (10), wherein the third reflector (12) faces the fourth reflector (13), and wherein the third reflector (12) and the fourth reflector (13) have a reflectivity maximum in the region of a second wavelength (?2), wherein the first wavelength (?1) is greater than the second wavelength (?2).Type: GrantFiled: December 15, 2010Date of Patent: September 2, 2014Assignee: Forschungsverbund Berlin e.V.Inventors: Günther Tränkle, Joachim Piprek, Hans Wenzel, Götz Erbert, Markus Weyers, Andrea Knigge
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Publication number: 20140070272Abstract: The present invention relates to a UV photodetector having a high sensitivity and a low dark current. The object of the present invention is to specify a UV photodetector that has a high sensitivity and a low dark current. According to the invention, the fingers of the first electrode structure and the fingers of the second electrode structure have a cover layer made of a second semiconducting material, wherein the cover layer is arranged on the absorber layer and directly contacts the absorber layer in the region of the fingers, and the first semiconducting material and the second semiconducting material are designed in such a manner that a two-dimensional electron gas (2DEG) is formed at the boundary layer between the absorber layer and the cover layer in the region of the fingers.Type: ApplicationFiled: April 26, 2012Publication date: March 13, 2014Applicant: Forschungsverbund Berlin e.V.Inventors: Andrea Knigge, Markus Weyers, Hans-Joachim Wurfl
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Publication number: 20110228805Abstract: A the vertical-cavity surface-emitting laser includes a stripe-shaped active medium (10) having an emission maximum at a first wavelength (?1), wherein a first reflector (18) is arranged below the stripe-shaped active medium (10) and a second reflector (20) is arranged above the stripe-shaped active medium (10), with the first reflector (18) facing the second reflector (20), wherein the first reflector (18) and a second reflector (20) have a reflectivity maximum in the region of the first wavelength (?1), wherein a third reflector (12) and a fourth reflector (13) are each arranged on a side above or next to the stripe-shaped active medium (10), wherein the third reflector (12) faces the fourth reflector (13), and wherein the third reflector (12) and the fourth reflector (13) have a reflectivity maximum in the region of a second wavelength (?2), wherein the first wavelength (?1)) is greater than the second wavelength (?2).Type: ApplicationFiled: December 15, 2010Publication date: September 22, 2011Applicant: FORSCHUNGSVERBUND BERLIN E.V.Inventors: Günther TRÄNKLE, Joachim PIPREK, Hans WENZEL, Götz ERBERT, Markus WEYERS, Andrea KNIGGE
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Publication number: 20040144984Abstract: A method or fabricating a surface emitting semiconductor device like a GaAs-based vertical cavity surface emitting laser diode comprising basically a substrate, two stacks of Bragg mirrors surrounding a laser cavity containing the active region and a contact layer on top of the DBR facing the light extraction window 13 featuring a layer (2) made form gallium-indium-phosphide (GaInP) epitaxially deposited during the growth of the layer sequence.Type: ApplicationFiled: January 29, 2003Publication date: July 29, 2004Applicant: Forschungsverbund Berling e.V.Inventors: Andrea Knigge, Martin Zorn, Markus Weyers, Hans Wenzel